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Theoretical study of the impact of stress and interstitial oxygen on the behavior of intrinsic point defects in growing CZ-Si crystals
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- Conference Paper
- C1
- open access
Control of intrinsic point defects in single crystal silicon and germanium growth from a melt
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Thermal stress induced void formation during 450 mm defect free silicon crystal growth and implications for wafer inspection
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First principles calculations of the formation energy of the neutral
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A Comparison of Intrinsic Point Defect Properties in Si and Ge
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Ab-initio simulation of self-interstitial in germanium
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First principles calculations of the formation energy and deep levels associated with the neutral and charged vacancy in germanium
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On the solubility and diffusivity of the intrinsic point defects in germanium
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Ab initio calculation of the formation energy of charged vacancies in germanium
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Ab initio studies of intrinsic point defects, interstitial oxygen and vacancy or oxygen clustering in germanium crystals