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High energy proton radiation induced defects in tin doped n-type silicon.
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Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM.
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Tin doping of silicon for controlling oxygen precipitation and radiation hardness.
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Defect analysis of n-type silicon strained layers.
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Tin doping effects in silicon
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Tin-related deep levels in proton-irradiated n-type silicon.
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Deep levels in high-energy proton-irradiated tin-doped n-type Czochralski silicon.
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Study of recombination properties of neutron transmutation doped silicon wafers.
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ON THE IMPACT OF LOW FLUENCE IRRADIATION WITH MEV PARTICLES ON SILICON DIODE CHARACTERISTICS AND RELATED MATERIAL PROPERTIES.
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GENERATION AND ANNEALING BEHAVIOR OF MEV PROTON AND CF-252 IRRADIATION-INDUCED DEEP LEVELS IN SILICON DIODES.