Ghent University Academic Bibliography

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- Conference Paper
- C3
Semiconductor-metal transition in ALD deposited vanadium oxide thin films and nanoparticles

Geert Rampelberg (UGent) , Bob De Schutter (UGent) , Wouter Devulder (UGent) , Marc Schaekers, Koen Martens, Christian Dussarrat and Christophe Detavernier (UGent)

(2016) Atomic Layer Deposition, 16th International conference, Abstracts.
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Defect engineering for shallow n-type junctions in germanium : facts and fiction

Eddy Simoen (UGent) , Marc Schaekers, Jinbiao Liu, Jun Luo, Chao Zhao, Kathy Barla and Nadine Collaert

(2016) PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. 213(22). p.2799-2808
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- Conference Paper
- C3
Thin, low roughness Ru films deposited by thermal and plasma enhanced atomic layer deposition using RuO4 and H2 at low temperatures

Matthias Minjauw (UGent) , Jolien Dendooven (UGent) , Christian Dussarat, Eduardo Solano Minuesa (UGent) , Kilian Devloo-Casier (UGent) , Jakob Kuhs (UGent) , Marc Schaekers, Alessandro Coati and Christophe Detavernier (UGent)

(2016) Materials for Advanced Metallization, IEEE conference, Abstracts.
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- Conference Paper
- C3
Thin, low roughness Ru films deposited by thermal and plasma enhanced atomic layer deposition using RuO4 and H2 at low temperatures

Matthias Minjauw (UGent) , Jolien Dendooven (UGent) , Boris Capon (UGent) , Christian Dussarat, Eduardo Solano Minuesa (UGent) , Kilian Devloo-Casier (UGent) , Jakob Kuhs (UGent) , Marc Schaekers, Alessandro Coati and Christophe Detavernier (UGent)

(2016) Belgian Physical Society, General scientific meeting, Abstracts.
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- Conference Paper
- C3
Thin, low roughness Ru films deposited by thermal and plasma enhanced atomic layer deposition using RuO4 and H2 at low temperatures

Matthias Minjauw (UGent) , Jolien Dendooven (UGent) , Boris Capon (UGent) , Christian Dussarat, Eduardo Solano Minuesa (UGent) , Kilian Devloo-Casier (UGent) , Jakob Kuhs (UGent) , Marc Schaekers, Alessandro Coati and Christophe Detavernier (UGent)

(2016) SR-ALD workshop : 12-15 June 2016, ALBA Synchrotron, Barcelona (Spain).
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- Conference Paper
- C3
Plasma enhanced atomic layer deposition of ruthenium below 100°C using RuO4 and H2-plasma

Matthias Minjauw (UGent) , Jolien Dendooven (UGent) , Boris Capon (UGent) , Marc Schaekers and Christophe Detavernier (UGent)

(2015) Atomic Layer Deposition, 15th International conference, Abstracts.
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Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H-2-plasma

Matthias Minjauw (UGent) , Jolien Dendooven (UGent) , Boris Capon (UGent) , Marc Schaekers and Christophe Detavernier (UGent)

(2015) JOURNAL OF MATERIALS CHEMISTRY C. 3(19). p.4848-4851
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Atomic layer deposition of ruthenium at 100 °C using the RuO4-precursor and H2

Matthias Minjauw (UGent) , Jolien Dendooven (UGent) , Boris Capon (UGent) , Marc Schaekers and Christophe Detavernier (UGent)

(2015) JOURNAL OF MATERIALS CHEMISTRY C. 3(1). p.132-137
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Low temperature thermal and plasma enhanced atomic layer deposition of ruthenium using RuO4 and H2/H2-plasma

Matthias Minjauw (UGent) , Jolien Dendooven (UGent) , Boris Capon (UGent) , Christophe Detavernier (UGent) and Marc Schaekers

(2015) 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM). p.33-35
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Metal-insulator transition in ALD VO2 ultrathin films and nanoparticles: morphological control

Anthony P Peter, Koen Martens, Geert Rampelberg (UGent) , Michael Toeller, James M Ablett, Johan Meersschaut, Daniel Cuypers, Alexis Franquet, Christophe Detavernier (UGent) , Jean-Pascal Rueff, et al.

(2015) ADVANCED FUNCTIONAL MATERIALS. 25(5). p.679-686

Academic Bibliography

Semiconductor-metal transition in ALD deposited vanadium oxide thin films and nanoparticles

Defect engineering for shallow n-type junctions in germanium : facts and fiction

Thin, low roughness Ru films deposited by thermal and plasma enhanced atomic layer deposition using RuO4 and H2 at low temperatures

Thin, low roughness Ru films deposited by thermal and plasma enhanced atomic layer deposition using RuO4 and H2 at low temperatures

Thin, low roughness Ru films deposited by thermal and plasma enhanced atomic layer deposition using RuO4 and H2 at low temperatures

Plasma enhanced atomic layer deposition of ruthenium below 100°C using RuO4 and H2-plasma

Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H-2-plasma

Atomic layer deposition of ruthenium at 100 °C using the RuO4-precursor and H2

Low temperature thermal and plasma enhanced atomic layer deposition of ruthenium using RuO4 and H2/H2-plasma

Metal-insulator transition in ALD VO2 ultrathin films and nanoparticles: morphological control

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