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Grown-in lattice defects and diffusion in Czochralski-grown germanium
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InAlGaP materials and red emitting LEDs on GaAs and Ge substrates
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5.2% efficiency InAlGaP microcavity LEDs at 640nm on Ge substrates.
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High-efficiency 650 nm thin-film light-emitting diodes.
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High-efficiency thin-film light-emitting diodes at 650 nm.
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(Al)GaInP multiquantum well LEDs on GaAs and Ge.
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InAlGaP microcavity LEDs on Ge-substrates
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High efficiency InAlGaP microcavity LEDs on Ge-substrates
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AlGaInP microcavity light-emitting diodes at 650 nm on Ge substrates.
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High quality AlGaInP layers on GaAs and Ge grown by MOVPE.