Ghent University Academic Bibliography

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Your filters: cql: author="Claeys, C" or (type any "bookEditor journalEditor issueEditor" and editor="Claeys, C")

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- Journal Article
- A1
Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon

E SIMEON, C CLAEYS, R LOO, Olivier De Gryse, Paul Clauws (UGent) , R JOB, AG ULYASHIN and W FAHRNER

(2003) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 102(1-3). p.207-212
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- Conference Paper
- C1
Analysis of thermal donor formation in n-type CZ silicon

J RAFI, E SIMOEN, C CLAEYS, A ULYASHIN, R JOB, W FAHRNER, Jorg Versluys, Paul Clauws (UGent) , M LOZANO and F CAMPABADAL

(2003) Analytical and diagnostic techniques for semiconductor materials, devices and processes. p.96-105
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- Conference Paper
- P1
Analysis of oxygen thermal donor formation in n-type Cz silicon

JM RAFI, E SIMOEN, C CLAEYS, AG ULYASHIN, R JOB, WR FAHRNER, Jorg Versluys, Paul Clauws (UGent) , M LOZANO and F CAMPABADAL

(2003) ANALYTICAL AND DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS, DEVICES, AND PROCESSES. 2003(3). p.96-105
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- Journal Article
- A1
Deep levels in high-temperature 1 MeV electron-irradiated n-type Czochralski silicon

E SIMOEN, JM RAFI, C CLAEYS, V NEIMASH, A KRAITCHINSKII, M KRAS'KO, V TISCHENKO, V VOITOVYCH, Jorg Versluys and Paul Clauws (UGent)

(2003) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS. 42(12). p.7184-7188
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- Conference Paper
- P1
Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy

Olivier De Gryse, Paul Clauws (UGent) , Jan Vanhellemont (UGent) , O LEBEDEV, J VAN LANDUYT, E SIMOEN and C CLAEYS

(2002) HIGH PURITY SILICON VII, PROCEEDINGS. p.183-194
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- Journal Article
- A1
Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques.

O De Gryse, Paul Clauws (UGent) , J Van Landuyt, O Lebedev, C Claeys, E Simoen and Jan Vanhellemont (UGent)

(2002) JOURNAL OF APPLIED PHYSICS. 91(4). p.2493-2498
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- Journal Article
- A1
Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon.

E SIMOEN, R LOO, C CLAEYS, Olivier De Gryse, Paul Clauws (UGent) , J VAN LANDUYT and O LEBEDEV

(2002) JOURNAL OF PHYSICS-CONDENSED MATTER. 14(48). p.13185-13193
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- Journal Article
- A1
Hydrogen plasma-enhanced thermal donor formation in n-type oxygen-doped high-resistivity float-zone silicon.

E SIMOEN, C CLAEYS, R JOB, AG ULYASHIN, WR FAHRNER, Olivier De Gryse and Paul Clauws (UGent)

(2002) APPLIED PHYSICS LETTERS. 81(10). p.1842-1844
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- Conference Paper
- P1
The behaviour of oxygen in oxygenated n-type high resistivity Float-Zone silicon

E SIMOEN, C CLAEYS, R JOB, AG ULYASHIN, WR FAHRNER, G TONELLI, Olivier De Gryse and Paul Clauws (UGent)

(2002) SEMICONDUCTOR SILICON 2002, VOLS 1 AND 2. 2002(2). p.912-924
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- Journal Article
- A1
DLTS and PL studies of proton radiation defects in tin-doped FZ silicon.

E SIMOEN, C CLAEYS, V PRIVITERA, S COFFA, M KOKKORIS, E KOSSIONIDES, G FANOURAKIS, AN LARSEN and Paul Clauws (UGent)

(2002) NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. 37286.

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Academic Bibliography

Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon

Analysis of thermal donor formation in n-type CZ silicon

Analysis of oxygen thermal donor formation in n-type Cz silicon

Deep levels in high-temperature 1 MeV electron-irradiated n-type Czochralski silicon

Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy

Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques.

Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon.

Hydrogen plasma-enhanced thermal donor formation in n-type oxygen-doped high-resistivity float-zone silicon.

The behaviour of oxygen in oxygenated n-type high resistivity Float-Zone silicon

DLTS and PL studies of proton radiation defects in tin-doped FZ silicon.

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