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Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon
(2003) MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 102(1-3). p.207-212 -
Analysis of thermal donor formation in n-type CZ silicon
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Analysis of oxygen thermal donor formation in n-type Cz silicon
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Deep levels in high-temperature 1 MeV electron-irradiated n-type Czochralski silicon
(2003) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS. 42(12). p.7184-7188 -
Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy
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Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques.
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Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon.
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Hydrogen plasma-enhanced thermal donor formation in n-type oxygen-doped high-resistivity float-zone silicon.
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The behaviour of oxygen in oxygenated n-type high resistivity Float-Zone silicon
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DLTS and PL studies of proton radiation defects in tin-doped FZ silicon.