Ghent University Academic Bibliography

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- Journal Article
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Study of GaN films grown by metalorganic chemical vapour deposition

Wim Van der Stricht, Ingrid Moerman (UGent) , Piet Demeester (UGent) , JA Crawley and EJ Thrush

(1996) MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH. 1(1-46).
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- Conference Paper
- C1
Growth and characterisation of GaN and InGaN by metalorganic chemical vapour deposition for blue light emitting devices

Wim Van Der Stricht, Ingrid Moerman (UGent) , Piet Demeester (UGent) , JA CRAWLEY and EJ THRUSH

(1996) Proceedings of the Annual Symposium of the IEEE/LEOS Benelux Chapter, 28 November Enschede, The Netherlands. p.50-53
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- Conference Paper
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Study of GaN films by metalorganic chemical vapour deposition

Wim Van Der Stricht, Ingrid Moerman (UGent) , Piet Demeester (UGent) , JA CRAWLEY and EJ THRUSH

(1996) Proceedings of the 8th International Conference on Metal Organic Vapour Phase Epitaxy, 9-13 June Cardiff, Wales, United Kingdom, pp. OKSP.7.
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- Conference Paper
- C1
Highly uniform AlGaAs/GaAs and InGaAs(P)/InP structures grown in a novel 3x2' vertical rotating disc MOVPE-reactor

X ZHANG, Ingrid Moerman (UGent) , Carl Sys (UGent) , Piet Demeester (UGent) , JA CRAWLEY and EJ THRUSH

(1996) Proceedings of the 8th International Conference on Metal Organic Vapour Phase Epitaxy, 9-13 June Cardiff, Wales, United Kingdom, pp. PBSP.l.
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- Conference Paper
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The effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition

Wim Van Der Stricht, Ingrid Moerman (UGent) , Piet Demeester (UGent) , JA Crawley, EJ Thrush, PG Middleton, C Trager Cowan and KP O'Donnell

(1995) Materials Research Society Symposium Proceedings. 395. p.231-236

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Academic Bibliography

Study of GaN films grown by metalorganic chemical vapour deposition

Growth and characterisation of GaN and InGaN by metalorganic chemical vapour deposition for blue light emitting devices

Study of GaN films by metalorganic chemical vapour deposition

Highly uniform AlGaAs/GaAs and InGaAs(P)/InP structures grown in a novel 3x2' vertical rotating disc MOVPE-reactor

The effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition

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