Ghent University Academic Bibliography

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- Journal Article
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Highly uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP structures grown in a three 2" wafer close-spaced vertical rotating disk reactor.

Koen Vanhollebeke, L CONSIDINE, Ingrid Moerman (UGent) , Piet Demeester (UGent) , EJ THRUSH and JA CRAWLEY

(1998) JOURNAL OF CRYSTAL GROWTH. 195(1-4). p.644-647
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- Journal Article
- A1
Growth and in situ monitoring of GaN using IR interference effects.

L CONSIDINE, EJ THRUSH, JA CRAWLEY, K JACOBS, W VAN DER STRICHT, Ingrid Moerman (UGent) , Piet Demeester (UGent) , GH PARK, SJ HWANG and JJ SONG

(1998) JOURNAL OF CRYSTAL GROWTH. 195(1-4). p.192-198
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Study of GaN and InGaN films grown by metalorganic chemical vapour deposition

Wim Van Der Stricht, Ingrid Moerman (UGent) , Piet Demeester (UGent) , JA Crawley and EJ Thrush

(1997) JOURNAL OF CRYSTAL GROWTH. 170(1-4). p.344-348
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- Conference Paper
- C1
MOVPE growth and characterization of high quality InGaN films

Wim Van Der Stricht, Ingrid Moerman (UGent) , Piet Demeester (UGent) , EJ THRUSH and JA CRAWLEY

(1997) Proceedings of the 7th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques, 8-11 June Berlin, Germany, pp. F6.
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- Conference Paper
- C1
MOVPE growth of high quality InGaN films and InGaN/GaN quantum wells

Wim Van Der Stricht, Ingrid Moerman (UGent) , Piet Demeester (UGent) , EJ THRUSH and JA CRAWLEY

(1997) Proceedings of the LEOS Summer Topical Meetings, Gallium Nitride Materials, Processing, and Devices, 11-13 August Montreal, Quebec, Canada. p.27-28
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- Journal Article
- A1
MOVPE growth optimization of high quality InGaN films.

W VANDERSTRICHT, Ingrid Moerman (UGent) , Piet Demeester (UGent) , L CONSIDINE, EJ THRUSH and JA CRAWLEY

(1997) MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH. 2(16) 1-6).
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- Journal Article
- A1
Highly uniform AlGaAs/GaAs and InGaAs(P)/InP structures grown in a multiwafer vertical rotating susceptor MOVPE reactor.

X ZHANG, Ingrid Moerman (UGent) , Carl Sys (UGent) , Piet Demeester (UGent) , JA CRAWLEY and EJ THRUSH

(1997) JOURNAL OF CRYSTAL GROWTH. 170(1-4). p.83-87
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- Journal Article
- A2
MOVPE growth optimization of high quality InGaN films

Wim Van Der Stricht, Ingrid Moerman (UGent) , Piet Demeester (UGent) , L CONSIDINE, EJ THRUSH and JA CRAWLEY

(1997) Second European GaN Workshop (EGW-2), The Materials Research Society (MRS) Internet Journal of Nitride Semiconductor Research (http://nsr.mij.mrs.Org/2/16/complete.html), Vol. 2, 11-13 June Valbonne, France.
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- Conference Paper
- C1
Getter stabilized zeolite materials for specialty GAS purification

G VERGANI, M SUCCI, EJ THRUSH, JA CRAWLEY, Wim Van Der Stricht, P TORRES and U KROLL

(1997) Proceedings of the 43rd Annual Technical Meeting, 4-8 May Los Angeles, California, USA. p.262-272
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- Conference Paper
- C1
High Indium content InGaN films and quantum wells

Wim Van Der Stricht, Koen Jacobs, Ingrid Moerman (UGent) , Piet Demeester (UGent) , L CONSIDINE, EJ THRUSH, JA CRAWLEY and P RUTERANA

(1997) Proceedings of the Materials Research Society Symposium on Nitride Semiconductors, 1-5 December Boston, Massachusetts, USA. p.107-112

Academic Bibliography

Highly uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP structures grown in a three 2" wafer close-spaced vertical rotating disk reactor.

Growth and in situ monitoring of GaN using IR interference effects.

Study of GaN and InGaN films grown by metalorganic chemical vapour deposition

MOVPE growth and characterization of high quality InGaN films

MOVPE growth of high quality InGaN films and InGaN/GaN quantum wells

MOVPE growth optimization of high quality InGaN films.

Highly uniform AlGaAs/GaAs and InGaAs(P)/InP structures grown in a multiwafer vertical rotating susceptor MOVPE reactor.

MOVPE growth optimization of high quality InGaN films

Getter stabilized zeolite materials for specialty GAS purification

High Indium content InGaN films and quantum wells

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