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First demonstration of 980nm oxide confined laser with integrated spot size converter.
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Holographically defined grating assisted Micro-cavity light emitting diodes.
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INP-based microcavity light emitting diodes emitting diodes emitting at 1. 3 µm and 1. 55 µm.
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Excimer laser ablated U-groove alignment structure for optical fibre arrays.
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OMVPE-based epitaxial lateral overgrowth for GaN LEDs.
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Violet-blue InGaN/GaN MQW light emitting diodes on epitaxially laterally overgrown GaN.
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Realisation of highly efficient 850nm top emitting resonant cavity light emitting diodes.
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Flip chip mounted substrate-removed 850nm bottom-emitting 8x8 MCLED arrays with selectively oxidised current windows.
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Wet lateral oxidtion of AlGaAs for passive and active guided wave components.
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InP-based microcavity LED emitting at 1320 nm with 5% external quantum efficiency.