- 2021
-
The path towards efficient wide band gap thin-film kesterite solar cells with transparent back contact for viable tandem application
Samira Khelifi
UGent, Guy Brammertz, Léo Choubrac, Maria Batuk, Sheng Yang
UGent, Marc Meuris, Nicolas Barreau, Joke Hadermann, Henk Vrielinck
UGent, Dirk Poelman
UGent, et al.
(2021)
SOLAR ENERGY MATERIALS AND SOLAR CELLS.
219.
- 2020
-
Electrical activity of extended defects in relaxed InxGa1−xAs hetero-epitaxial layers
C. Claeys, P.-C. Hsu, Y. Mols, H. Han, H. Bender, F. Seidel, P. Carolan, C. Merckling, A. Alian, N. Waldron, et al.
(2020)
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY.
9(3).
-
Numerical modelling of the performance-limiting factors in CZGSe solar cells
Sheng Yang
UGent, Samira Khelifi
UGent, Guy Brammertz, Leo Choubrac, Nicolas Barreau, Pieter Bolt, Bart Vermang and Johan Lauwaert
UGent
(2020)
JOURNAL OF PHYSICS D - APPLIED PHYSICS.
53(38).
-
Fructosamine-3-kinase as a potential treatment option for age-related macular degeneration
Sander De Bruyne, Caroline Van den Broecke
UGent, Henk Vrielinck
UGent, Samira Khelifi
UGent, Olivier De Wever
UGent, Ken Bracke
UGent, Manon Huizing, Nezahat Boston, Jonas Himpe
UGent, Marijn Speeckaert
UGent, et al.
(2020)
JOURNAL OF CLINICAL MEDICINE.
9(9).
-
Effect of Na and the back contact on Cu2Zn(Sn,Ge)Se4 thin-film solar cells : towards semi-transparent solar cells
Andrea Ruiz-Perona, Yudania Sanchez, Maxim Guc, Samira Khelifi
UGent, Tim Kodalle, Marcel Placidi, Jose Manuel Merino, Maximo Leon and Raquel Caballero
(2020)
SOLAR ENERGY.
206.
p.555-563
-
Impact of dummy gate removal and a silicon cap on the low-frequency noise performance of germanium nFinFETs
Duan Xie, Eddy Simoen
UGent, Haifeng Chen, Hiroaki Arimura and Naoto Horiguchi
(2020)
IEEE TRANSACTIONS ON ELECTRON DEVICES.
67(11).
p.4713-4719
-
Investigation of defect characteristics and carrier transport mechanisms in GaN layers with different carbon doping concentration
Hongyue Wang, Po-Chun Hsu, Ming Zhao, Eddy Simoen
UGent, Arturo Sibaja-Hernandez and Jinyan Wang
(2020)
IEEE TRANSACTIONS ON ELECTRON DEVICES.
67(11).
p.4827-4833
-
A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors
P.-C. Hsu, Eddy Simoen
UGent, D. Lin, A. Stesmans, L. Goux, R. Delhougne, P. Carolan, H. Bender and G. S. Kar
(2020)
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY.
9(4).
- 2019
-
Lanthanide-centered luminescence evolution and potential anti-counterfeiting application of Tb3+/Eu3+ grafted melamine cyanurate hydrogen-bonded triazine frameworks
Chaoqing Yang
UGent, Anna Kaczmarek
UGent, Karel Folens
UGent, Gijs Du Laing
UGent, Henk Vrielinck
UGent, Samira Khelifi
UGent, Kai Li
UGent and Rik Van Deun
UGent
(2019)
MATERIALS CHEMISTRY FRONTIERS.
3(4).
p.579-586
-
Deep levels in metal-oxide-semiconductor capacitors fabricated on n-type In0.53Ga0.47As lattice matched to InP substrates
Eddy Simoen
UGent, Po-Chun (Brent) Hsu, A Alian, S El Kazzi and C Wang
(2019)
SEMICONDUCTOR SCIENCE AND TECHNOLOGY.
34(7).
-
Sputter deposition of copper oxide films
Dulmaa Altangerel
UGent, Henk Vrielinck
UGent, Samira Khelifi
UGent and Diederik Depla
UGent
(2019)
APPLIED SURFACE SCIENCE.
492.
p.711-717
-
Analysis of leakage mechanisms in AlN nucleation layers on p-Si and p-SOI substrates
Weihang Zhang, Eddy Simoen
UGent, Ming Zhao and Jincheng Zhang
(2019)
IEEE TRANSACTIONS ON ELECTRON DEVICES.
66(4).
p.1849-1855
-
Low-frequency noise assessment of work function engineering cap layers in high-k gate stacks
C Claeys, R Ritzenthaler, T Schram, H Arimura, N Horiguchi and Eddy Simoen
UGent
(2019)
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY.
8(2).
p.N25-N31
-
Gate metal and cap layer effects on Ge nMOSFETs low-frequency noise behavior
Liang He, Pan Zhao, Jiahao Liu, Yahui Su, Hua Chen, Xiaofei Jia, Hiroaki Arimura, Jerome Mitard, Liesbet Witters, Naoto Horiguchi, et al.
(2019)
IEEE TRANSACTIONS ON ELECTRON DEVICES.
66(2).
p.1050-1056
-
Wide band gap kesterite absorbers for thin film solar cells : potential and challenges for their deployment in tandem devices
Bart Vermang, Guy Brammertz, Marc Meuris, Thomas Schnabel, Erik Ahlswede, Leo Choubrac, Sylvie Harel, Christophe Cardinaux, Ludovic Arzel, Nicolas Barreau, et al.
(2019)
SUSTAINABLE ENERGY & FUELS.
3(9).
p.2246-2259
-
Device performance as a metrology tool to detect metals in silicon
Cor Claeys and Eddy Simoen
UGent
(2019)
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE.
216(17).
-
Observation of the stacking faults in In0.53Ga0.47As by electron channeling contrast imaging
Po-Chun (Brent) Hsu, Han Han, Eddy Simoen
UGent, Clement Merckling, Geert Eneman, Yves Mols, Nadine Collaert and Marc Heyns
(2019)
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE.
216(17).
-
Impact of in situ annealing on the deep levels in Ni‐Au/AlN/Si metal-insulator-semiconductor capacitors
Chong Wang
UGent, Ming Zhao, Wei Li and Eddy Simoen
UGent
(2019)
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE.
216(17).
- 2018
-
Sulfurization of co-evaporated Cu2ZnSnSe4 thin film solar cells : the role of Na
L de la Cueva, Y Sánchez, L Calvo-Barrio, F Oliva, V Izquierdo-Roca, Samira Khelifi
UGent, T Bertram, JM Merino, M León and R Caballero
(2018)
SOLAR ENERGY MATERIALS AND SOLAR CELLS.
186.
p.115-123
-
Impact of band to band tunneling in In0.53Ga0.47As tunnel diodes on the deep level transient spectra
S Gupta, Eddy Simoen
UGent, R Loo, Q Smets, AS Verhulst, Johan Lauwaert
UGent, Henk Vrielinck
UGent and M Heyns
(2018)
APPLIED PHYSICS LETTERS.
113(23).
-
Electrical properties of extended defects in strain relaxed GeSn
Somya Gupta, Eddy Simoen
UGent, Roger Loo, Yosuke Shimura, Clement Porret, Federica Gencarelli, Kristof Paredis, Hugo Bender, Johan Lauwaert
UGent, Henk Vrielinck
UGent, et al.
(2018)
APPLIED PHYSICS LETTERS.
113(2).
-
Deep level assessment of n-type Si/SiO2 metal-oxide-semiconductor capacitors with embedded Ge quantum dots
M Aouassa, Henk Vrielinck
UGent and Eddy Simoen
UGent
(2018)
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY.
7(2).
p.P24-P28
-
On the evolution of strain and electrical properties in As-grown and annealed Si:P epitaxial films for source-drain stressor applications
Sathish kumar Dhayalan, Jiri Kujala, Jonatan Slotte, Geoffrey Pourtois, Eddy Simoen
UGent, Erik Rosseel, Andriy Hikavyy, Yosuke Shimura, Roger Loo and Wilfried Vandervorst
(2018)
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY.
7(5).
p.P228-P237
-
Detailed structural and electrical characterization of plated crystalline silicon solar cells
C Dang, R Labie, Eddy Simoen
UGent and J Poortmans
(2018)
SOLAR ENERGY MATERIALS AND SOLAR CELLS.
184.
p.57-66