441 – 450 of 455
- show: 10
- |
- sort: year (new to old)
- |
- Export
- 2000
- Ballistic Electron Emission icroscopy (BEEM). (2000) Physicalia Magazine. 22(1).
- The influence of mixing entropy on the nucleationof CoSi2. (2000) PHYSICAL REVIEW B. 62(18). p.12045-12051
- Ballistic electron emission microscopy studies of the temperature dependence of Schottky barrier height distribution in CoSi2/n-Si(1 0 0) diodes formed by solid phase reaction (2000) SOLID-STATE ELECTRONICS. 44(12). p.2217-2223
- Ion-bombardment effects on PtSi/n-Si Schottky contacts studied by ballistic electron emission microscopy. (2000) JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. 18(4) 1942-1948).
- A BEEM study of Schottky barrier height distributions of ultrathin CoSi2/n-Si(100) formed by solid phase epitaxy. (2000) SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 15(4). p.349-356
- Growth of patterned thin epitaxial CoSi2-films by a titanium oxide mediated epitaxy process (2000) THIN SOLID FILMS. 380(1-2). p.201-203
- Nondestructive characterization of thin silicides using x-ray reflectivity. (2000) JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS. 18(2). p.470-476
- Influence of Ti on CoSi2 nucleation. (2000) APPLIED PHYSICS LETTERS. 77(20). p.3170-3172
- CoSi2 formation in the Ti/Co/SiO2/Si system (2000) JOURNAL OF APPLIED PHYSICS. 88(1). p.133-140
- Barrier height inhomogeneities of epitaxial CoSi2 Schottky contacts on n-Si (100) and (111). (2000) SOLID-STATE ELECTRONICS. 44(4). p.663-671