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Thermal versus plasma-enhanced ALD : growth kinetics and conformality

Christophe Detavernier (UGent) , Jolien Dendooven (UGent) , Davy Deduytsche (UGent) and Jan Musschoot (UGent)
(2008) ECS Transactions. In ECS Transactions 16(4). p.239-246
Author
Organization
Abstract
Film purity, growth kinetics and conformality were compared for thermal and plasma-enhanced atomic layer deposition (PE-ALD) of Al2O3, AlN and TiN. The use of a plasma to enhance the activity of the reactant gas results in a significant improvement of the growth rate and film purity. However, based on experiments with an ammonia plasma for the growth AlN, the conformality of PE-ALD appears to be quite limited.
Keywords
THIN-FILMS, ATOMIC LAYER DEPOSITION, TA

Citation

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MLA
Detavernier, Christophe, Jolien Dendooven, Davy Deduytsche, et al. “Thermal Versus Plasma-enhanced ALD : Growth Kinetics and Conformality.” ECS Transactions. Ed. A Londergan et al. Vol. 16. Pennington, NJ, USA: Electrochemical Society (ECS), 2008. 239–246. Print.
APA
Detavernier, C., Dendooven, J., Deduytsche, D., & Musschoot, J. (2008). Thermal versus plasma-enhanced ALD : growth kinetics and conformality. In A. Londergan, S. Bent, S. De Gendt, J. Elam, S. Kang, & O. Van der Straten (Eds.), ECS Transactions (Vol. 16, pp. 239–246). Presented at the 4th Symposium on Atomic Layer Deposition Applications, held at the 214th Meeting of the Electrochemical Society (214th ECS Meeting), Pennington, NJ, USA: Electrochemical Society (ECS).
Chicago author-date
Detavernier, Christophe, Jolien Dendooven, Davy Deduytsche, and Jan Musschoot. 2008. “Thermal Versus Plasma-enhanced ALD : Growth Kinetics and Conformality.” In ECS Transactions, ed. A Londergan, SF Bent, S De Gendt, JW Elam, SB Kang, and O Van der Straten, 16:239–246. Pennington, NJ, USA: Electrochemical Society (ECS).
Chicago author-date (all authors)
Detavernier, Christophe, Jolien Dendooven, Davy Deduytsche, and Jan Musschoot. 2008. “Thermal Versus Plasma-enhanced ALD : Growth Kinetics and Conformality.” In ECS Transactions, ed. A Londergan, SF Bent, S De Gendt, JW Elam, SB Kang, and O Van der Straten, 16:239–246. Pennington, NJ, USA: Electrochemical Society (ECS).
Vancouver
1.
Detavernier C, Dendooven J, Deduytsche D, Musschoot J. Thermal versus plasma-enhanced ALD : growth kinetics and conformality. In: Londergan A, Bent S, De Gendt S, Elam J, Kang S, Van der Straten O, editors. ECS Transactions. Pennington, NJ, USA: Electrochemical Society (ECS); 2008. p. 239–46.
IEEE
[1]
C. Detavernier, J. Dendooven, D. Deduytsche, and J. Musschoot, “Thermal versus plasma-enhanced ALD : growth kinetics and conformality,” in ECS Transactions, Honolulu, HI, USA, 2008, vol. 16, no. 4, pp. 239–246.
@inproceedings{977928,
  abstract     = {Film purity, growth kinetics and conformality were compared for thermal and plasma-enhanced atomic layer deposition (PE-ALD) of Al2O3, AlN and TiN. The use of a plasma to enhance the activity of the reactant gas results in a significant improvement of the growth rate and film purity. However, based on experiments with an ammonia plasma for the growth AlN, the conformality of PE-ALD appears to be quite limited.},
  author       = {Detavernier, Christophe and Dendooven, Jolien and Deduytsche, Davy and Musschoot, Jan},
  booktitle    = {ECS Transactions},
  editor       = {Londergan, A and  Bent, SF and De Gendt, S and Elam, JW and Kang, SB and Van der Straten, O},
  isbn         = {9781566776509},
  issn         = {1938-5862},
  keywords     = {THIN-FILMS,ATOMIC LAYER DEPOSITION,TA},
  language     = {eng},
  location     = {Honolulu, HI, USA},
  number       = {4},
  pages        = {239--246},
  publisher    = {Electrochemical Society (ECS)},
  title        = {Thermal versus plasma-enhanced ALD : growth kinetics and conformality},
  url          = {http://dx.doi.org/10.1149/1.2979999},
  volume       = {16},
  year         = {2008},
}

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