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In situ and ex situ investigation on the annealing performance of the ZnO film grown by ion beam deposition

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Abstract
The effects of the post-annealing treatment on the properties of the ZnO thin films deposited by ion beam sputtering have been investigated. By using in situ X-ray diffraction technique, an overview of the crystallization behavior of the ZnO film during the annealing process was obtained. It was found that the whole process can be divided into three regions. The improvement of the film's crystallinity performance mainly occurs within the annealing temperature ranging from 300 to 600 A degrees C. Both in situ and ex situ XRD results show the shift of the ZnO (002) peak towards high angle with the increasing annealing temperature, which is attributed to the variation of the stress in the film. The stress is mainly caused by the intrinsic stress which is affected by the oxygen deficiency in the film. The oxygen deficiency is sensitive to the annealing ambient. The film annealed in the O-2 ambient has less oxygen deficiency and higher resistivity. All the ZnO films deposited on the glass substrates have an optical transmittance over 85% in the visible region. Our results show that the ZnO films deposited using ion beam sputtering exhibit good thermal stability and high performance after annealing.
Keywords
PULSED-LASER DEPOSITION, THIN-FILMS, PRESSURE, LAYERS, ELECTRODES, SPECTROSCOPY, BEHAVIOR

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MLA
Chen, Tao et al. “In Situ and Ex Situ Investigation on the Annealing Performance of the ZnO Film Grown by Ion Beam Deposition.” JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 21.1 (2010): 88–95. Print.
APA
Chen, Tao, Liu, S.-Y., Xie, Q., Detavernier, C., Vanmeirhaeghe, R., & Qu, X.-P. (2010). In situ and ex situ investigation on the annealing performance of the ZnO film grown by ion beam deposition. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 21(1), 88–95.
Chicago author-date
Chen, Tao, Shu-Yi Liu, Qi Xie, Christophe Detavernier, Roland Vanmeirhaeghe, and Xin-Ping Qu. 2010. “In Situ and Ex Situ Investigation on the Annealing Performance of the ZnO Film Grown by Ion Beam Deposition.” Journal of Materials Science-materials in Electronics 21 (1): 88–95.
Chicago author-date (all authors)
Chen, Tao, Shu-Yi Liu, Qi Xie, Christophe Detavernier, Roland Vanmeirhaeghe, and Xin-Ping Qu. 2010. “In Situ and Ex Situ Investigation on the Annealing Performance of the ZnO Film Grown by Ion Beam Deposition.” Journal of Materials Science-materials in Electronics 21 (1): 88–95.
Vancouver
1.
Chen T, Liu S-Y, Xie Q, Detavernier C, Vanmeirhaeghe R, Qu X-P. In situ and ex situ investigation on the annealing performance of the ZnO film grown by ion beam deposition. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. 2010;21(1):88–95.
IEEE
[1]
T. Chen, S.-Y. Liu, Q. Xie, C. Detavernier, R. Vanmeirhaeghe, and X.-P. Qu, “In situ and ex situ investigation on the annealing performance of the ZnO film grown by ion beam deposition,” JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol. 21, no. 1, pp. 88–95, 2010.
@article{977844,
  abstract     = {The effects of the post-annealing treatment on the properties of the ZnO thin films deposited by ion beam sputtering have been investigated. By using in situ X-ray diffraction technique, an overview of the crystallization behavior of the ZnO film during the annealing process was obtained. It was found that the whole process can be divided into three regions. The improvement of the film's crystallinity performance mainly occurs within the annealing temperature ranging from 300 to 600 A degrees C. Both in situ and ex situ XRD results show the shift of the ZnO (002) peak towards high angle with the increasing annealing temperature, which is attributed to the variation of the stress in the film. The stress is mainly caused by the intrinsic stress which is affected by the oxygen deficiency in the film. The oxygen deficiency is sensitive to the annealing ambient. The film annealed in the O-2 ambient has less oxygen deficiency and higher resistivity. All the ZnO films deposited on the glass substrates have an optical transmittance over 85% in the visible region. Our results show that the ZnO films deposited using ion beam sputtering exhibit good thermal stability and high performance after annealing.},
  author       = {Chen, Tao and Liu, Shu-Yi and Xie, Qi and Detavernier, Christophe and Vanmeirhaeghe, Roland and Qu, Xin-Ping},
  issn         = {0957-4522},
  journal      = {JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS},
  keywords     = {PULSED-LASER DEPOSITION,THIN-FILMS,PRESSURE,LAYERS,ELECTRODES,SPECTROSCOPY,BEHAVIOR},
  language     = {eng},
  number       = {1},
  pages        = {88--95},
  title        = {In situ and ex situ investigation on the annealing performance of the ZnO film grown by ion beam deposition},
  url          = {http://dx.doi.org/10.1007/s10854-009-9874-7},
  volume       = {21},
  year         = {2010},
}

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