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In situ X-ray diffraction study of thin film Ir/Si solid state reactions

(2010) MICROELECTRONIC ENGINEERING. 87(3). p.258-262
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Keywords
RTA, KINETICS, VACUUM, SILICON, STABILITY, XRD, NiSi, Ir, Si, LAYERS, NICKEL, IRIDIUM SILICIDES

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Chicago
Knaepen, Werner, J Demeulemeester, Davy Deduytsche, JL Jordan-Sweet, A Vantomme, Roland Vanmeirhaeghe, Christophe Detavernier, and C Lavoie. 2010. “In Situ X-ray Diffraction Study of Thin Film Ir/Si Solid State Reactions.” Microelectronic Engineering 87 (3): 258–262.
APA
Knaepen, W., Demeulemeester, J., Deduytsche, D., Jordan-Sweet, J., Vantomme, A., Vanmeirhaeghe, R., Detavernier, C., et al. (2010). In situ X-ray diffraction study of thin film Ir/Si solid state reactions. MICROELECTRONIC ENGINEERING, 87(3), 258–262. Presented at the 18th European Workshop on Materials for Advanced Metallization.
Vancouver
1.
Knaepen W, Demeulemeester J, Deduytsche D, Jordan-Sweet J, Vantomme A, Vanmeirhaeghe R, et al. In situ X-ray diffraction study of thin film Ir/Si solid state reactions. MICROELECTRONIC ENGINEERING. 2010;87(3):258–62.
MLA
Knaepen, Werner, J Demeulemeester, Davy Deduytsche, et al. “In Situ X-ray Diffraction Study of Thin Film Ir/Si Solid State Reactions.” MICROELECTRONIC ENGINEERING 87.3 (2010): 258–262. Print.
@article{977815,
  author       = {Knaepen, Werner and Demeulemeester, J and Deduytsche, Davy and Jordan-Sweet, JL and Vantomme, A and Vanmeirhaeghe, Roland and Detavernier, Christophe and Lavoie, C},
  issn         = {0167-9317},
  journal      = {MICROELECTRONIC ENGINEERING},
  keyword      = {RTA,KINETICS,VACUUM,SILICON,STABILITY,XRD,NiSi,Ir,Si,LAYERS,NICKEL,IRIDIUM SILICIDES},
  language     = {eng},
  location     = {Grenoble, France},
  number       = {3},
  pages        = {258--262},
  title        = {In situ X-ray diffraction study of thin film Ir/Si solid state reactions},
  url          = {http://dx.doi.org/10.1016/j.mee.2009.06.002},
  volume       = {87},
  year         = {2010},
}

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