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Conformality of Al2O3 and AlN deposited by plasma-enhanced atomic layer deposition

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Abstract
This paper focuses on the conformality of the plasma-enhanced atomic layer deposition (PE-ALD) of Al2O3 using trimethylaluminum [Al(CH3)(3); (TMA)] as a precursor and O-2 plasma as an oxidant source. The conformality was quantified by measuring the deposited film thickness as a function of depth into macroscopic test structures with aspect ratios of similar to 5, 10, and 22. A comparison with the thermal TMA/H2O process indicates that the conformality of the plasma based process is more limited due to the surface recombination of radicals during the plasma step. The conformality can slightly be improved by raising the gas pressure or the radio-frequency power. Prolonging the plasma exposure time results in further improvement of the conformality. Furthermore, there are indications that the H2O produced during the plasma step in the PE-ALD process for Al2O3 contributes to the observed conformality through a secondary thermal ALD reaction. The conformality of Al2O3 is also compared to the conformality of AlN deposited by PE-ALD from TMA and NH3 plasma. For the same exposure, O-2 plasma results in better conformality compared to NH3 plasma, suggesting a faster recombination of the radicals in the NH3 plasma.
Keywords
plasma CVD, free radicals, atomic layer deposition, aluminium compounds, alumina, surface recombination, OXYGEN, PRECURSOR, STEP-COVERAGE, AMORPHOUS ALUMINUM NITRIDE, THIN-FILMS

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MLA
Dendooven, Jolien et al. “Conformality of Al2O3 and AlN Deposited by Plasma-enhanced Atomic Layer Deposition.” JOURNAL OF THE ELECTROCHEMICAL SOCIETY 157.4 (2010): G111–G116. Print.
APA
Dendooven, J., Deduytsche, D., Musschoot, J., Vanmeirhaeghe, R., & Detavernier, C. (2010). Conformality of Al2O3 and AlN deposited by plasma-enhanced atomic layer deposition. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 157(4), G111–G116.
Chicago author-date
Dendooven, Jolien, Davy Deduytsche, Jan Musschoot, Roland Vanmeirhaeghe, and Christophe Detavernier. 2010. “Conformality of Al2O3 and AlN Deposited by Plasma-enhanced Atomic Layer Deposition.” Journal of the Electrochemical Society 157 (4): G111–G116.
Chicago author-date (all authors)
Dendooven, Jolien, Davy Deduytsche, Jan Musschoot, Roland Vanmeirhaeghe, and Christophe Detavernier. 2010. “Conformality of Al2O3 and AlN Deposited by Plasma-enhanced Atomic Layer Deposition.” Journal of the Electrochemical Society 157 (4): G111–G116.
Vancouver
1.
Dendooven J, Deduytsche D, Musschoot J, Vanmeirhaeghe R, Detavernier C. Conformality of Al2O3 and AlN deposited by plasma-enhanced atomic layer deposition. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 2010;157(4):G111–G116.
IEEE
[1]
J. Dendooven, D. Deduytsche, J. Musschoot, R. Vanmeirhaeghe, and C. Detavernier, “Conformality of Al2O3 and AlN deposited by plasma-enhanced atomic layer deposition,” JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 157, no. 4, pp. G111–G116, 2010.
@article{977801,
  abstract     = {This paper focuses on the conformality of the plasma-enhanced atomic layer deposition (PE-ALD) of Al2O3 using trimethylaluminum [Al(CH3)(3); (TMA)] as a precursor and O-2 plasma as an oxidant source. The conformality was quantified by measuring the deposited film thickness as a function of depth into macroscopic test structures with aspect ratios of similar to 5, 10, and 22. A comparison with the thermal TMA/H2O process indicates that the conformality of the plasma based process is more limited due to the surface recombination of radicals during the plasma step. The conformality can slightly be improved by raising the gas pressure or the radio-frequency power. Prolonging the plasma exposure time results in further improvement of the conformality. Furthermore, there are indications that the H2O produced during the plasma step in the PE-ALD process for Al2O3 contributes to the observed conformality through a secondary thermal ALD reaction. The conformality of Al2O3 is also compared to the conformality of AlN deposited by PE-ALD from TMA and NH3 plasma. For the same exposure, O-2 plasma results in better conformality compared to NH3 plasma, suggesting a faster recombination of the radicals in the NH3 plasma.},
  author       = {Dendooven, Jolien and Deduytsche, Davy and Musschoot, Jan and Vanmeirhaeghe, Roland and Detavernier, Christophe},
  issn         = {0013-4651},
  journal      = {JOURNAL OF THE ELECTROCHEMICAL SOCIETY},
  keywords     = {plasma CVD,free radicals,atomic layer deposition,aluminium compounds,alumina,surface recombination,OXYGEN,PRECURSOR,STEP-COVERAGE,AMORPHOUS ALUMINUM NITRIDE,THIN-FILMS},
  language     = {eng},
  number       = {4},
  pages        = {G111--G116},
  title        = {Conformality of Al2O3 and AlN deposited by plasma-enhanced atomic layer deposition},
  url          = {http://dx.doi.org/10.1149/1.3301664},
  volume       = {157},
  year         = {2010},
}

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