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Phase formation and thermal stability of ultrathin nickel-silicides on Si(100)

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Abstract
The solid-state reaction and agglomeration of thin nickel-silicide films was investigated from sputter deposited nickel films (1-10 nm) on silicon-on-insulator (100) substrates. For typical anneals at a ramp rate of 3 degrees C/s, 5-10 nm Ni films react with silicon and form NiSi, which agglomerates at 550-650 degrees C, whereas films with a thickness of 3.7 nm of less were found to form an epitaxylike nickel-silicide layer. The resulting films show an increased thermal stability with a low electrical resistivity up to 800 degrees C.
Keywords
sputter deposition, thin films, thermal stability, nickel compounds, silicon-on-insulator, electrical resistivity, chemical reactions, electrical conductivity transitions, annealing, CMOS

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Chicago
De Keyser, Koen, Charlotte Van Bockstael, Roland Vanmeirhaeghe, Christophe Detavernier, E Verleysen, H Bender, W Vandervorst, J Jordan-Sweet, and C Lavoie. 2010. “Phase Formation and Thermal Stability of Ultrathin Nickel-silicides on Si(100).” Applied Physics Letters 96 (17).
APA
De Keyser, Koen, Van Bockstael, C., Vanmeirhaeghe, R., Detavernier, C., Verleysen, E., Bender, H., Vandervorst, W., et al. (2010). Phase formation and thermal stability of ultrathin nickel-silicides on Si(100). APPLIED PHYSICS LETTERS, 96(17).
Vancouver
1.
De Keyser K, Van Bockstael C, Vanmeirhaeghe R, Detavernier C, Verleysen E, Bender H, et al. Phase formation and thermal stability of ultrathin nickel-silicides on Si(100). APPLIED PHYSICS LETTERS. 2010;96(17).
MLA
De Keyser, Koen, Charlotte Van Bockstael, Roland Vanmeirhaeghe, et al. “Phase Formation and Thermal Stability of Ultrathin Nickel-silicides on Si(100).” APPLIED PHYSICS LETTERS 96.17 (2010): n. pag. Print.
@article{977790,
  abstract     = {The solid-state reaction and agglomeration of thin nickel-silicide films was investigated from sputter deposited nickel films (1-10 nm) on silicon-on-insulator (100) substrates. For typical anneals at a ramp rate of 3 degrees C/s, 5-10 nm Ni films react with silicon and form NiSi, which agglomerates at 550-650 degrees C, whereas films with a thickness of 3.7 nm of less were found to form an epitaxylike nickel-silicide layer. The resulting films show an increased thermal stability with a low electrical resistivity up to 800 degrees C.},
  articleno    = {173503},
  author       = {De Keyser, Koen and Van Bockstael, Charlotte and Vanmeirhaeghe, Roland and Detavernier, Christophe and Verleysen, E and Bender, H and Vandervorst, W and Jordan-Sweet, J and Lavoie, C},
  issn         = {0003-6951},
  journal      = {APPLIED PHYSICS LETTERS},
  keyword      = {sputter deposition,thin films,thermal stability,nickel compounds,silicon-on-insulator,electrical resistivity,chemical reactions,electrical conductivity transitions,annealing,CMOS},
  language     = {eng},
  number       = {17},
  pages        = {3},
  title        = {Phase formation and thermal stability of ultrathin nickel-silicides on Si(100)},
  url          = {http://dx.doi.org/10.1063/1.3384997},
  volume       = {96},
  year         = {2010},
}

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