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Phase formation and thermal stability of ultrathin nickel-silicides on Si(100)

Koen De Keyser UGent, Charlotte Van Bockstael UGent, Roland Vanmeirhaeghe UGent, Christophe Detavernier UGent, E Verleysen, H Bender, W Vandervorst, J Jordan-Sweet and C Lavoie (2010) APPLIED PHYSICS LETTERS. 96(17).
abstract
The solid-state reaction and agglomeration of thin nickel-silicide films was investigated from sputter deposited nickel films (1-10 nm) on silicon-on-insulator (100) substrates. For typical anneals at a ramp rate of 3 degrees C/s, 5-10 nm Ni films react with silicon and form NiSi, which agglomerates at 550-650 degrees C, whereas films with a thickness of 3.7 nm of less were found to form an epitaxylike nickel-silicide layer. The resulting films show an increased thermal stability with a low electrical resistivity up to 800 degrees C.
Please use this url to cite or link to this publication:
author
organization
year
type
journalArticle (original)
publication status
published
subject
keyword
sputter deposition, thin films, thermal stability, nickel compounds, silicon-on-insulator, electrical resistivity, chemical reactions, electrical conductivity transitions, annealing, CMOS
journal title
APPLIED PHYSICS LETTERS
Appl. Phys. Lett.
volume
96
issue
17
article_number
173503
pages
3 pages
Web of Science type
Article
Web of Science id
000277242000044
JCR category
PHYSICS, APPLIED
JCR impact factor
3.82 (2010)
JCR rank
14/116 (2010)
JCR quartile
1 (2010)
ISSN
0003-6951
DOI
10.1063/1.3384997
language
English
UGent publication?
yes
classification
A1
copyright statement
I have transferred the copyright for this publication to the publisher
id
977790
handle
http://hdl.handle.net/1854/LU-977790
date created
2010-06-14 12:10:42
date last changed
2011-10-24 14:05:01
@article{977790,
  abstract     = {The solid-state reaction and agglomeration of thin nickel-silicide films was investigated from sputter deposited nickel films (1-10 nm) on silicon-on-insulator (100) substrates. For typical anneals at a ramp rate of 3 degrees C/s, 5-10 nm Ni films react with silicon and form NiSi, which agglomerates at 550-650 degrees C, whereas films with a thickness of 3.7 nm of less were found to form an epitaxylike nickel-silicide layer. The resulting films show an increased thermal stability with a low electrical resistivity up to 800 degrees C.},
  articleno    = {173503},
  author       = {De Keyser, Koen and Van Bockstael, Charlotte and Vanmeirhaeghe, Roland and Detavernier, Christophe and Verleysen, E and Bender, H and Vandervorst, W and Jordan-Sweet, J and Lavoie, C},
  issn         = {0003-6951},
  journal      = {APPLIED PHYSICS LETTERS},
  keyword      = {sputter deposition,thin films,thermal stability,nickel compounds,silicon-on-insulator,electrical resistivity,chemical reactions,electrical conductivity transitions,annealing,CMOS},
  language     = {eng},
  number       = {17},
  pages        = {3},
  title        = {Phase formation and thermal stability of ultrathin nickel-silicides on Si(100)},
  url          = {http://dx.doi.org/10.1063/1.3384997},
  volume       = {96},
  year         = {2010},
}

Chicago
De Keyser, Koen, Charlotte Van Bockstael, Roland Vanmeirhaeghe, Christophe Detavernier, E Verleysen, H Bender, W Vandervorst, J Jordan-Sweet, and C Lavoie. 2010. “Phase Formation and Thermal Stability of Ultrathin Nickel-silicides on Si(100).” Applied Physics Letters 96 (17).
APA
De Keyser, Koen, Van Bockstael, C., Vanmeirhaeghe, R., Detavernier, C., Verleysen, E., Bender, H., Vandervorst, W., et al. (2010). Phase formation and thermal stability of ultrathin nickel-silicides on Si(100). APPLIED PHYSICS LETTERS, 96(17).
Vancouver
1.
De Keyser K, Van Bockstael C, Vanmeirhaeghe R, Detavernier C, Verleysen E, Bender H, et al. Phase formation and thermal stability of ultrathin nickel-silicides on Si(100). APPLIED PHYSICS LETTERS. 2010;96(17).
MLA
De Keyser, Koen, Charlotte Van Bockstael, Roland Vanmeirhaeghe, et al. “Phase Formation and Thermal Stability of Ultrathin Nickel-silicides on Si(100).” APPLIED PHYSICS LETTERS 96.17 (2010): n. pag. Print.