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Lifetime Assessment of In(x)Ga(1-x)As n-Type Hetero-Epitaxial Layers

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Abstract
Herein, the carrier lifetime in approximately 5x10^16 cm^(-3) n-doped In(x)Ga(1-x)As layers is studied by diode current–voltage analysis and by time-resolved photoluminescence. Two sets of hetero-epitaxial layers are grown on semi-insulating InP or GaAs substrates. The first set corresponds with a constant In content p + n stack, while the second set has a fixed x = 0.53 for the n-layer, while containing various extended defect densities by using a strain relaxed buffer with different x. This results in threading dislocation densities (TDDs) between approximately 10^5 cm^(-2) and a few 10^9 cm^(-2). It is shown that the overall trend of the recombination lifetime versus TDD can be described by a first-order model considering a finite recombination lifetime value inside a dislocation core of 1 nm. For the generation lifetime, a strong electric-field enhancement factor is found. Also, the residual strain in the n-layer has an impact. Overall, the safe limit for TDD depends on the type of application and on the operation conditions (reverse diode bias).
Keywords
Materials Chemistry, Electrical and Electronic Engineering, Surfaces, Coatings and Films, Surfaces and Interfaces, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

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MLA
Hsu, P. C. (Brent), et al. “Lifetime Assessment of In(x)Ga(1-x)As n-Type Hetero-Epitaxial Layers.” Physica Status Solidi (a), vol. 219, no. 17, Wiley-VCH, 2022, doi:10.1002/pssa.202200127.
APA
Hsu, P.-C. (Brent), Simoen, E., Eneman, G., Merckling, C., Mols, Y., & Heyns, M. (2022). Lifetime Assessment of In(x)Ga(1-x)As n-Type Hetero-Epitaxial Layers. Physica Status Solidi (a), 219(17). https://doi.org/10.1002/pssa.202200127
Chicago author-date
Hsu, P.-C. (Brent), Eddy Simoen, Geert Eneman, Clement Merckling, Yves Mols, and Marc Heyns. 2022. “Lifetime Assessment of In(x)Ga(1-x)As n-Type Hetero-Epitaxial Layers.” Physica Status Solidi (a) 219 (17). https://doi.org/10.1002/pssa.202200127.
Chicago author-date (all authors)
Hsu, P.-C. (Brent), Eddy Simoen, Geert Eneman, Clement Merckling, Yves Mols, and Marc Heyns. 2022. “Lifetime Assessment of In(x)Ga(1-x)As n-Type Hetero-Epitaxial Layers.” Physica Status Solidi (a) 219 (17). doi:10.1002/pssa.202200127.
Vancouver
1.
Hsu P-C (Brent), Simoen E, Eneman G, Merckling C, Mols Y, Heyns M. Lifetime Assessment of In(x)Ga(1-x)As n-Type Hetero-Epitaxial Layers. physica status solidi (a). 2022;219(17).
IEEE
[1]
P.-C. (Brent) Hsu, E. Simoen, G. Eneman, C. Merckling, Y. Mols, and M. Heyns, “Lifetime Assessment of In(x)Ga(1-x)As n-Type Hetero-Epitaxial Layers,” physica status solidi (a), vol. 219, no. 17, 2022.
@article{8767474,
  abstract     = {{Herein, the carrier lifetime in approximately 5x10^16 cm^(-3) n-doped In(x)Ga(1-x)As layers is
studied by diode current–voltage analysis and by time-resolved photoluminescence.
Two sets of hetero-epitaxial layers are grown on semi-insulating InP or
GaAs substrates. The first set corresponds with a constant In content p + n stack,
while the second set has a fixed x = 0.53 for the n-layer, while containing various
extended defect densities by using a strain relaxed buffer with different x. This
results in threading dislocation densities (TDDs) between approximately 10^5 cm^(-2) and a few
10^9 cm^(-2). It is shown that the overall trend of the recombination lifetime versus
TDD can be described by a first-order model considering a finite recombination
lifetime value inside a dislocation core of 1 nm. For the generation lifetime, a
strong electric-field enhancement factor is found. Also, the residual strain in the
n-layer has an impact. Overall, the safe limit for TDD depends on the type of
application and on the operation conditions (reverse diode bias).}},
  articleno    = {{2200127}},
  author       = {{Hsu, P.-C. (Brent) and Simoen, Eddy and Eneman, Geert and Merckling, Clement and Mols, Yves and Heyns, Marc}},
  issn         = {{1862-6300}},
  journal      = {{physica status solidi (a)}},
  keywords     = {{Materials Chemistry,Electrical and Electronic Engineering,Surfaces,Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic,Optical and Magnetic Materials}},
  language     = {{eng}},
  number       = {{17}},
  pages        = {{6}},
  publisher    = {{Wiley-VCH}},
  title        = {{Lifetime Assessment of In(x)Ga(1-x)As n-Type Hetero-Epitaxial Layers}},
  url          = {{http://dx.doi.org/10.1002/pssa.202200127}},
  volume       = {{219}},
  year         = {{2022}},
}

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