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Light modulation in silicon photonics by PZT actuated acoustic waves

Irfan Ansari (UGent) , John Puthenparampil George (UGent) , Gilles Freddy Feutmba (UGent) , Tessa Van de Veire (UGent) , Awanish Pandey (UGent) , Jeroen Beeckman (UGent) and Dries Van Thourhout (UGent)
(2022) ACS PHOTONICS. 9(6). p.1944-1953
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Abstract
Tailoring the interaction between light and sound has opened new possibilities in photonic integrated circuits (PICs) that range from achieving quantum control of light to high-speed information processing. However, the actuation of sound waves in Si PICs usually requires integration of a piezoelectric thin film. Lead zirconate titanate (PZT) is a promising material due to its strong piezoelectric and electromechanical coupling coefficient. Unfortunately, the traditional methods to grow PZT on silicon are detrimental for photonic applications due to the presence of an optical lossy intermediate layer. In this work, we report integration of a high quality PZT thin film on a silicon-on-insulator (SOI) photonic chip using an optically transparent buffer layer. We demonstrate acousto-optic modulation in silicon waveguides with the PZT actuated acoustic waves. We fabricate interdigital transducers (IDTs) on the PZT film with a contact photolithography and electron-beam lithography to generate the acoustic waves in MHz and GHz ranges, respectively. We obtain a V pi L similar to 3.35 V.cm at 576 MHz from a 350 nm thick gold (Au) IDT with 20 finger-pairs. After taking the effect of mass-loading and grating reflection into account, we measured a V pi L similar to 3.60 V.cm at 2 GHz from a 100 nm thick aluminum (Al) IDT consisting of only four finger-pairs. Thus, without patterning the PZT film nor suspending the device, we obtained figures-of-merit comparable to state-of-the-art modulators based on SOI, making it a promising candidate for a broadband and efficient acousto-optic modulator for future integration.
Keywords
FILM LITHIUM-NIOBATE, ACOUSTOOPTIC MODULATION, MODE CONVERSION, MICROWAVE, SURFACE, GENERATION, EFFICIENT, GUIDES, DRIVEN, surface acoustic wave, PZT, silicon photonics, acousto-optic modulator, optomechanics

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Citation

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MLA
Ansari, Irfan, et al. “Light Modulation in Silicon Photonics by PZT Actuated Acoustic Waves.” ACS PHOTONICS, vol. 9, no. 6, 2022, pp. 1944–53, doi:10.1021/acsphotonics.1c01857.
APA
Ansari, I., Puthenparampil George, J., Feutmba, G. F., Van de Veire, T., Pandey, A., Beeckman, J., & Van Thourhout, D. (2022). Light modulation in silicon photonics by PZT actuated acoustic waves. ACS PHOTONICS, 9(6), 1944–1953. https://doi.org/10.1021/acsphotonics.1c01857
Chicago author-date
Ansari, Irfan, John Puthenparampil George, Gilles Freddy Feutmba, Tessa Van de Veire, Awanish Pandey, Jeroen Beeckman, and Dries Van Thourhout. 2022. “Light Modulation in Silicon Photonics by PZT Actuated Acoustic Waves.” ACS PHOTONICS 9 (6): 1944–53. https://doi.org/10.1021/acsphotonics.1c01857.
Chicago author-date (all authors)
Ansari, Irfan, John Puthenparampil George, Gilles Freddy Feutmba, Tessa Van de Veire, Awanish Pandey, Jeroen Beeckman, and Dries Van Thourhout. 2022. “Light Modulation in Silicon Photonics by PZT Actuated Acoustic Waves.” ACS PHOTONICS 9 (6): 1944–1953. doi:10.1021/acsphotonics.1c01857.
Vancouver
1.
Ansari I, Puthenparampil George J, Feutmba GF, Van de Veire T, Pandey A, Beeckman J, et al. Light modulation in silicon photonics by PZT actuated acoustic waves. ACS PHOTONICS. 2022;9(6):1944–53.
IEEE
[1]
I. Ansari et al., “Light modulation in silicon photonics by PZT actuated acoustic waves,” ACS PHOTONICS, vol. 9, no. 6, pp. 1944–1953, 2022.
@article{8759902,
  abstract     = {{Tailoring the interaction between light and sound has opened new possibilities in photonic integrated circuits (PICs) that range from achieving quantum control of light to high-speed information processing. However, the actuation of sound waves in Si PICs usually requires integration of a piezoelectric thin film. Lead zirconate titanate (PZT) is a promising material due to its strong piezoelectric and electromechanical coupling coefficient. Unfortunately, the traditional methods to grow PZT on silicon are detrimental for photonic applications due to the presence of an optical lossy intermediate layer. In this work, we report integration of a high quality PZT thin film on a silicon-on-insulator (SOI) photonic chip using an optically transparent buffer layer. We demonstrate acousto-optic modulation in silicon waveguides with the PZT actuated acoustic waves. We fabricate interdigital transducers (IDTs) on the PZT film with a contact photolithography and electron-beam lithography to generate the acoustic waves in MHz and GHz ranges, respectively. We obtain a V pi L similar to 3.35 V.cm at 576 MHz from a 350 nm thick gold (Au) IDT with 20 finger-pairs. After taking the effect of mass-loading and grating reflection into account, we measured a V pi L similar to 3.60 V.cm at 2 GHz from a 100 nm thick aluminum (Al) IDT consisting of only four finger-pairs. Thus, without patterning the PZT film nor suspending the device, we obtained figures-of-merit comparable to state-of-the-art modulators based on SOI, making it a promising candidate for a broadband and efficient acousto-optic modulator for future integration.}},
  author       = {{Ansari, Irfan and Puthenparampil George, John and Feutmba, Gilles Freddy and Van de Veire, Tessa and Pandey, Awanish and Beeckman, Jeroen and Van Thourhout, Dries}},
  issn         = {{2330-4022}},
  journal      = {{ACS PHOTONICS}},
  keywords     = {{FILM LITHIUM-NIOBATE,ACOUSTOOPTIC MODULATION,MODE CONVERSION,MICROWAVE,SURFACE,GENERATION,EFFICIENT,GUIDES,DRIVEN,surface acoustic wave,PZT,silicon photonics,acousto-optic modulator,optomechanics}},
  language     = {{eng}},
  number       = {{6}},
  pages        = {{1944--1953}},
  title        = {{Light modulation in silicon photonics by PZT actuated acoustic waves}},
  url          = {{http://doi.org/10.1021/acsphotonics.1c01857}},
  volume       = {{9}},
  year         = {{2022}},
}
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