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TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs

A. N. Tallarico, M. Millesimo, Benoit Bakeroot (UGent) , M. Borga, N. Posthuma, S. Decoutere, E. Sangiorgi and C. Fiegna
(2022) IEEE TRANSACTIONS ON ELECTRON DEVICES. 69(2). p.507-513
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Abstract
TCAD modeling of the dynamic threshold voltage shift (hysteresis) occurring under fast sweeping characterization in Schottky-type p-GaN gate high-electron-mobility transistors (HEMTs) is reported, to the best of our knowledge, for the first time. Dynamic VTH hysteresis has been first experimentally characterized under different sweeping times, temperatures, and AlGaN barrier configurations. Then, TCAD simulations have been carried out, reproducing the experimental evidences and understanding the microscopic mechanisms responsible for such effect. In particular, nonlocal tunneling models implemented in Sentaurus TCAD, defined at the gate Schottky contact and assisted by traps in the AlGaN barrier layer, have been adopted and properly tuned against experiments. Results show that the dynamic VTH hysteresis is mainly caused by the time-dependent hole charging/discharging processes in the floating p-GaN layer, which are governed by the Schottky and AlGaN barrier leakage current components.
Keywords
Wide band gap semiconductorsAluminum gallium nitride, Logic gates, Hysteresis, HEMTs, MODFETs, Schottky diodes, Charge trapping, dynamic VTH hysteresis, gate leakage, p-GaN gate high-electron-mobility transistor (HEMT), TCAD modeling, tunneling model, THRESHOLD VOLTAGE, V-TH, POWER, TECHNOLOGY, SHIFT

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MLA
Tallarico, A. N., et al. “TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in P-GaN Gate HEMTs.” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 69, no. 2, 2022, pp. 507–13, doi:10.1109/TED.2021.3134928.
APA
Tallarico, A. N., Millesimo, M., Bakeroot, B., Borga, M., Posthuma, N., Decoutere, S., … Fiegna, C. (2022). TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs. IEEE TRANSACTIONS ON ELECTRON DEVICES, 69(2), 507–513. https://doi.org/10.1109/TED.2021.3134928
Chicago author-date
Tallarico, A. N., M. Millesimo, Benoit Bakeroot, M. Borga, N. Posthuma, S. Decoutere, E. Sangiorgi, and C. Fiegna. 2022. “TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in P-GaN Gate HEMTs.” IEEE TRANSACTIONS ON ELECTRON DEVICES 69 (2): 507–13. https://doi.org/10.1109/TED.2021.3134928.
Chicago author-date (all authors)
Tallarico, A. N., M. Millesimo, Benoit Bakeroot, M. Borga, N. Posthuma, S. Decoutere, E. Sangiorgi, and C. Fiegna. 2022. “TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in P-GaN Gate HEMTs.” IEEE TRANSACTIONS ON ELECTRON DEVICES 69 (2): 507–513. doi:10.1109/TED.2021.3134928.
Vancouver
1.
Tallarico AN, Millesimo M, Bakeroot B, Borga M, Posthuma N, Decoutere S, et al. TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2022;69(2):507–13.
IEEE
[1]
A. N. Tallarico et al., “TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs,” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 69, no. 2, pp. 507–513, 2022.
@article{8756544,
  abstract     = {{TCAD modeling of the dynamic threshold voltage shift (hysteresis) occurring under fast sweeping characterization in Schottky-type p-GaN gate high-electron-mobility transistors (HEMTs) is reported, to the best of our knowledge, for the first time. Dynamic VTH hysteresis has been first experimentally characterized under different sweeping times, temperatures, and AlGaN barrier configurations. Then, TCAD simulations have been carried out, reproducing the experimental evidences and understanding the microscopic mechanisms responsible for such effect. In particular, nonlocal tunneling models implemented in Sentaurus TCAD, defined at the gate Schottky contact and assisted by traps in the AlGaN barrier layer, have been adopted and properly tuned against experiments. Results show that the dynamic VTH hysteresis is mainly caused by the time-dependent hole charging/discharging processes in the floating p-GaN layer, which are governed by the Schottky and AlGaN barrier leakage current components.}},
  author       = {{Tallarico, A. N. and Millesimo, M. and Bakeroot, Benoit and Borga, M. and Posthuma, N. and Decoutere, S. and Sangiorgi, E. and Fiegna, C.}},
  issn         = {{0018-9383}},
  journal      = {{IEEE TRANSACTIONS ON ELECTRON DEVICES}},
  keywords     = {{Wide band gap semiconductorsAluminum gallium nitride,Logic gates,Hysteresis,HEMTs,MODFETs,Schottky diodes,Charge trapping,dynamic VTH hysteresis,gate leakage,p-GaN gate high-electron-mobility transistor (HEMT),TCAD modeling,tunneling model,THRESHOLD VOLTAGE,V-TH,POWER,TECHNOLOGY,SHIFT}},
  language     = {{eng}},
  number       = {{2}},
  pages        = {{507--513}},
  title        = {{TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs}},
  url          = {{http://doi.org/10.1109/TED.2021.3134928}},
  volume       = {{69}},
  year         = {{2022}},
}
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