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Deep-level trap formation in Si-substituted Sr2SnO4:Sm3+ for rewritable optical information storage

Jiaren Du, S. Lyu, K. Jiang, D. Huang, J. Li, Rik Van Deun (UGent) , Dirk Poelman (UGent) and H. Lin
(2022) MATERIALS TODAY CHEMISTRY. 24.
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Abstract
Persistent luminescent materials containing deep-level traps have attracted extensive research interest in the field of optical information storage due to their unique features of long-lasting emission, energy storage, and controllable photon release upon external stimulations. However, the lack of suitable luminescent materials with deep-level traps is still the bottleneck of such an optical storage application. Herein, we report a series of persistent luminescent materials with reddish-orange emissions and controllable photon release upon thermal stimulation. Through substitution of Sn by Si, more and deeper trap levels are achieved in Sr2SnO4:Sm3+ ,Si4+ phosphors. Moreover, both ultraviolet light and high-energy X-ray irradiations can induce reddish-orange emitting persistent luminescence from the as-synthesized samples. Rewritable optical information storage and readout based on photon trapping and de-trapping processes are demonstrated. Optical information can be handily encoded using a commercially available 365 nm light-emitting diode, and decoded upon thermal stimulation. The Sr2SnO4:Sm3+ ,Si4+ phosphors as presented in this work show a great promise for rewritable optical data storage and information encryption. (C) 2022 Elsevier Ltd. All rights reserved.
Keywords
Materials Chemistry, Colloid and Surface Chemistry, Polymers and Plastics, Biomaterials, Electronic, Optical and Magnetic Materials, Catalysis, Deep trap, Persistent luminescence, Co -doping, Information storage, Rare -earth doped materials, PERSISTENT LUMINESCENCE, ACTIVATION

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MLA
Du, Jiaren, et al. “Deep-Level Trap Formation in Si-Substituted Sr2SnO4:Sm3+ for Rewritable Optical Information Storage.” MATERIALS TODAY CHEMISTRY, vol. 24, 2022, doi:10.1016/j.mtchem.2022.100906.
APA
Du, J., Lyu, S., Jiang, K., Huang, D., Li, J., Van Deun, R., … Lin, H. (2022). Deep-level trap formation in Si-substituted Sr2SnO4:Sm3+ for rewritable optical information storage. MATERIALS TODAY CHEMISTRY, 24. https://doi.org/10.1016/j.mtchem.2022.100906
Chicago author-date
Du, Jiaren, S. Lyu, K. Jiang, D. Huang, J. Li, Rik Van Deun, Dirk Poelman, and H. Lin. 2022. “Deep-Level Trap Formation in Si-Substituted Sr2SnO4:Sm3+ for Rewritable Optical Information Storage.” MATERIALS TODAY CHEMISTRY 24. https://doi.org/10.1016/j.mtchem.2022.100906.
Chicago author-date (all authors)
Du, Jiaren, S. Lyu, K. Jiang, D. Huang, J. Li, Rik Van Deun, Dirk Poelman, and H. Lin. 2022. “Deep-Level Trap Formation in Si-Substituted Sr2SnO4:Sm3+ for Rewritable Optical Information Storage.” MATERIALS TODAY CHEMISTRY 24. doi:10.1016/j.mtchem.2022.100906.
Vancouver
1.
Du J, Lyu S, Jiang K, Huang D, Li J, Van Deun R, et al. Deep-level trap formation in Si-substituted Sr2SnO4:Sm3+ for rewritable optical information storage. MATERIALS TODAY CHEMISTRY. 2022;24.
IEEE
[1]
J. Du et al., “Deep-level trap formation in Si-substituted Sr2SnO4:Sm3+ for rewritable optical information storage,” MATERIALS TODAY CHEMISTRY, vol. 24, 2022.
@article{8750529,
  abstract     = {{Persistent luminescent materials containing deep-level traps have attracted extensive research interest in the field of optical information storage due to their unique features of long-lasting emission, energy storage, and controllable photon release upon external stimulations. However, the lack of suitable luminescent materials with deep-level traps is still the bottleneck of such an optical storage application. Herein, we report a series of persistent luminescent materials with reddish-orange emissions and controllable photon release upon thermal stimulation. Through substitution of Sn by Si, more and deeper trap levels are achieved in Sr2SnO4:Sm3+ ,Si4+ phosphors. Moreover, both ultraviolet light and high-energy X-ray irradiations can induce reddish-orange emitting persistent luminescence from the as-synthesized samples. Rewritable optical information storage and readout based on photon trapping and de-trapping processes are demonstrated. Optical information can be handily encoded using a commercially available 365 nm light-emitting diode, and decoded upon thermal stimulation. The Sr2SnO4:Sm3+ ,Si4+ phosphors as presented in this work show a great promise for rewritable optical data storage and information encryption. (C) 2022 Elsevier Ltd. All rights reserved.}},
  articleno    = {{100906}},
  author       = {{Du, Jiaren and Lyu, S. and Jiang, K. and Huang, D. and Li, J. and Van Deun, Rik and Poelman, Dirk and Lin, H.}},
  issn         = {{2468-5194}},
  journal      = {{MATERIALS TODAY CHEMISTRY}},
  keywords     = {{Materials Chemistry,Colloid and Surface Chemistry,Polymers and Plastics,Biomaterials,Electronic,Optical and Magnetic Materials,Catalysis,Deep trap,Persistent luminescence,Co -doping,Information storage,Rare -earth doped materials,PERSISTENT LUMINESCENCE,ACTIVATION}},
  language     = {{eng}},
  pages        = {{12}},
  title        = {{Deep-level trap formation in Si-substituted Sr2SnO4:Sm3+ for rewritable optical information storage}},
  url          = {{http://doi.org/10.1016/j.mtchem.2022.100906}},
  volume       = {{24}},
  year         = {{2022}},
}
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