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High-pulse-energy III-V-on-silicon-nitride mode-locked laser

Artur Hermans (UGent) , Kasper Van Gasse (UGent) , Jon O. Kjellman, Charles Caer, Tasuku Nakamura, Yasuhisa Inada, Kazuya Hisada, Taku Hirasawa, Stijn Cuyvers (UGent) , Sulakshna Kumari (UGent) , et al.
(2021) APL PHOTONICS. 6(9).
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Abstract
Mode-locked lasers find their use in a large number of applications, for instance, in spectroscopic sensing, distance measurements, and optical communication. To enable widespread use of mode-locked lasers, their on-chip integration is desired. In recent years, there have been multiple demonstrations of monolithic III-V and heterogeneous III-V- on-silicon mode-locked lasers. However, the pulse energy, noise performance, and stability of these mode-locked lasers are limited by the relatively high linear and nonlinear waveguide loss, and the high temperature sensitivity of said platforms. Here, we demonstrate a heterogeneous III-V-on-silicon-nitride (III-V-on-SiN) electrically pumped mode-locked laser. SiN's low waveguide loss, negligible two-photon absorption at telecom wavelengths, and small thermo- optic coefficient enable low-noise mode-locked lasers with high pulse energies and excellent temperature stability. Our mode-locked laser emits at a wavelength of 1.6 mu m, has a pulse repetition rate of 3 GHz, a high on-chip pulse energy of approximate to 2 pJ, a narrow RF linewidth of 400 Hz, and an optical linewidth <1 MHz. The SiN photonic circuits are fabricated on 200 mm silicon wafers in a CMOS pilot line and include an amorphous silicon waveguide layer for efficient coupling from the SiN to the III-V waveguide. The III-V integration is done by micro-transfer-printing, a technique that enables the transfer of thin-film devices in a massively parallel manner on a wafer scale. (C) 2021 Author(s).
Keywords
ABSOLUTE DISTANCE MEASUREMENTS, WAVE-GUIDES, QUANTUM-DOT, LINEWIDTH, PROPAGATION, NOISE

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Citation

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MLA
Hermans, Artur, et al. “High-Pulse-Energy III-V-on-Silicon-Nitride Mode-Locked Laser.” APL PHOTONICS, vol. 6, no. 9, 2021, doi:10.1063/5.0058022.
APA
Hermans, A., Van Gasse, K., Kjellman, J. O., Caer, C., Nakamura, T., Inada, Y., … Kuyken, B. (2021). High-pulse-energy III-V-on-silicon-nitride mode-locked laser. APL PHOTONICS, 6(9). https://doi.org/10.1063/5.0058022
Chicago author-date
Hermans, Artur, Kasper Van Gasse, Jon O. Kjellman, Charles Caer, Tasuku Nakamura, Yasuhisa Inada, Kazuya Hisada, et al. 2021. “High-Pulse-Energy III-V-on-Silicon-Nitride Mode-Locked Laser.” APL PHOTONICS 6 (9). https://doi.org/10.1063/5.0058022.
Chicago author-date (all authors)
Hermans, Artur, Kasper Van Gasse, Jon O. Kjellman, Charles Caer, Tasuku Nakamura, Yasuhisa Inada, Kazuya Hisada, Taku Hirasawa, Stijn Cuyvers, Sulakshna Kumari, Aleksandrs Marinins, Roelof Jansen, Günther Roelkens, Philippe Soussan, Xavier Rottenberg, and Bart Kuyken. 2021. “High-Pulse-Energy III-V-on-Silicon-Nitride Mode-Locked Laser.” APL PHOTONICS 6 (9). doi:10.1063/5.0058022.
Vancouver
1.
Hermans A, Van Gasse K, Kjellman JO, Caer C, Nakamura T, Inada Y, et al. High-pulse-energy III-V-on-silicon-nitride mode-locked laser. APL PHOTONICS. 2021;6(9).
IEEE
[1]
A. Hermans et al., “High-pulse-energy III-V-on-silicon-nitride mode-locked laser,” APL PHOTONICS, vol. 6, no. 9, 2021.
@article{8740020,
  abstract     = {{Mode-locked lasers find their use in a large number of applications, for instance, in spectroscopic sensing, distance measurements, and optical communication. To enable widespread use of mode-locked lasers, their on-chip integration is desired. In recent years, there have been multiple demonstrations of monolithic III-V and heterogeneous III-V- on-silicon mode-locked lasers. However, the pulse energy, noise performance, and stability of these mode-locked lasers are limited by the relatively high linear and nonlinear waveguide loss, and the high temperature sensitivity of said platforms. Here, we demonstrate a heterogeneous III-V-on-silicon-nitride (III-V-on-SiN) electrically pumped mode-locked laser. SiN's low waveguide loss, negligible two-photon absorption at telecom wavelengths, and small thermo- optic coefficient enable low-noise mode-locked lasers with high pulse energies and excellent temperature stability. Our mode-locked laser emits at a wavelength of 1.6 mu m, has a pulse repetition rate of 3 GHz, a high on-chip pulse energy of approximate to 2 pJ, a narrow RF linewidth of 400 Hz, and an optical linewidth <1 MHz. The SiN photonic circuits are fabricated on 200 mm silicon wafers in a CMOS pilot line and include an amorphous silicon waveguide layer for efficient coupling from the SiN to the III-V waveguide. The III-V integration is done by micro-transfer-printing, a technique that enables the transfer of thin-film devices in a massively parallel manner on a wafer scale. (C) 2021 Author(s).}},
  articleno    = {{096102}},
  author       = {{Hermans, Artur and Van Gasse, Kasper and Kjellman, Jon O. and Caer, Charles and Nakamura, Tasuku and Inada, Yasuhisa and Hisada, Kazuya and Hirasawa, Taku and Cuyvers, Stijn and Kumari, Sulakshna and Marinins, Aleksandrs and Jansen, Roelof and Roelkens, Günther and Soussan, Philippe and Rottenberg, Xavier and Kuyken, Bart}},
  issn         = {{2378-0967}},
  journal      = {{APL PHOTONICS}},
  keywords     = {{ABSOLUTE DISTANCE MEASUREMENTS,WAVE-GUIDES,QUANTUM-DOT,LINEWIDTH,PROPAGATION,NOISE}},
  language     = {{eng}},
  number       = {{9}},
  pages        = {{9}},
  title        = {{High-pulse-energy III-V-on-silicon-nitride mode-locked laser}},
  url          = {{http://doi.org/10.1063/5.0058022}},
  volume       = {{6}},
  year         = {{2021}},
}
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