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The fine-structure constant as a ruler for the band-edge light absorption strength of bulk and quantum-confined semiconductors

(2021) NANO LETTERS. 21(22). p.9426-9432
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Abstract
Low-dimensional semiconductors have found numerous applications in optoelectronics. However, a quantitative comparison of the absorption strength of low-dimensional versus bulk semiconductors has remained elusive. Here, we report generality in the band-edge light absorptance of semiconductors, independent of their dimensions. First, we provide atomistic tight-binding calculations that show that the absorptance of semiconductor quantum wells equals mπα (m = 1 or 2 with α as the fine-structure constant), in agreement with reported experimental results. Then, we show experimentally that a monolayer (superlattice) of quantum dots has similar absorptance, suggesting an absorptance quantum of mπα per (confined) exciton diameter. Extending this idea to bulk semiconductors, we experimentally demonstrate that an absorptance quantum equal to mπα per exciton Bohr diameter explains their widely varying absorption coefficients. We thus provided compelling evidence that the absorptance quantum πα per exciton diameter rules the band-edge absorption of all direct semiconductors, regardless of their dimension.
Keywords
Mechanical Engineering, Condensed Matter Physics, General Materials Science, General Chemistry, Bioengineering, fine-structure constant, optical transitions, light absorption, dielectric screening, quantum coupling, PBSE

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MLA
Prins, P. Tim, et al. “The Fine-Structure Constant as a Ruler for the Band-Edge Light Absorption Strength of Bulk and Quantum-Confined Semiconductors.” NANO LETTERS, vol. 21, no. 22, 2021, pp. 9426–32, doi:10.1021/acs.nanolett.1c02682.
APA
Prins, P. T., Alimoradi Jazi, M., Killilea, N. A., Evers, W. H., Geiregat, P., Heiss, W., … Vanmaekelbergh, D. (2021). The fine-structure constant as a ruler for the band-edge light absorption strength of bulk and quantum-confined semiconductors. NANO LETTERS, 21(22), 9426–9432. https://doi.org/10.1021/acs.nanolett.1c02682
Chicago author-date
Prins, P. Tim, Maryam Alimoradi Jazi, Niall A. Killilea, Wiel H. Evers, Pieter Geiregat, Wolfgang Heiss, Arjan J. Houtepen, Christophe Delerue, Zeger Hens, and Daniel Vanmaekelbergh. 2021. “The Fine-Structure Constant as a Ruler for the Band-Edge Light Absorption Strength of Bulk and Quantum-Confined Semiconductors.” NANO LETTERS 21 (22): 9426–32. https://doi.org/10.1021/acs.nanolett.1c02682.
Chicago author-date (all authors)
Prins, P. Tim, Maryam Alimoradi Jazi, Niall A. Killilea, Wiel H. Evers, Pieter Geiregat, Wolfgang Heiss, Arjan J. Houtepen, Christophe Delerue, Zeger Hens, and Daniel Vanmaekelbergh. 2021. “The Fine-Structure Constant as a Ruler for the Band-Edge Light Absorption Strength of Bulk and Quantum-Confined Semiconductors.” NANO LETTERS 21 (22): 9426–9432. doi:10.1021/acs.nanolett.1c02682.
Vancouver
1.
Prins PT, Alimoradi Jazi M, Killilea NA, Evers WH, Geiregat P, Heiss W, et al. The fine-structure constant as a ruler for the band-edge light absorption strength of bulk and quantum-confined semiconductors. NANO LETTERS. 2021;21(22):9426–32.
IEEE
[1]
P. T. Prins et al., “The fine-structure constant as a ruler for the band-edge light absorption strength of bulk and quantum-confined semiconductors,” NANO LETTERS, vol. 21, no. 22, pp. 9426–9432, 2021.
@article{8726692,
  abstract     = {{Low-dimensional semiconductors have found numerous applications in optoelectronics. However, a quantitative comparison of the absorption strength of low-dimensional versus bulk semiconductors has remained elusive. Here, we report generality in the band-edge light absorptance of semiconductors, independent of their dimensions. First, we provide atomistic tight-binding calculations that show that the absorptance of semiconductor quantum wells equals mπα (m = 1 or 2 with α as the fine-structure constant), in agreement with reported experimental results. Then, we show experimentally that a monolayer (superlattice) of quantum dots has similar absorptance, suggesting an absorptance quantum of mπα per (confined) exciton diameter. Extending this idea to bulk semiconductors, we experimentally demonstrate that an absorptance quantum equal to mπα per exciton Bohr diameter explains their widely varying absorption coefficients. We thus provided compelling evidence that the absorptance quantum πα per exciton diameter rules the band-edge absorption of all direct semiconductors, regardless of their dimension.}},
  author       = {{Prins, P. Tim and Alimoradi Jazi, Maryam and Killilea, Niall A. and Evers, Wiel H. and Geiregat, Pieter and Heiss, Wolfgang and Houtepen, Arjan J. and Delerue, Christophe and Hens, Zeger and Vanmaekelbergh, Daniel}},
  issn         = {{1530-6984}},
  journal      = {{NANO LETTERS}},
  keywords     = {{Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering,fine-structure constant,optical transitions,light absorption,dielectric screening,quantum coupling,PBSE}},
  language     = {{eng}},
  number       = {{22}},
  pages        = {{9426--9432}},
  title        = {{The fine-structure constant as a ruler for the band-edge light absorption strength of bulk and quantum-confined semiconductors}},
  url          = {{http://doi.org/10.1021/acs.nanolett.1c02682}},
  volume       = {{21}},
  year         = {{2021}},
}

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