NIR sensors based on photolithographically patterned PbS QD photodiodes for CMOS integration
- Author
- Epimitheas Georgitzikis, Pawel E. Malinowski, Luis Moreno Hagelsieb, Vladimir Pejovic, Griet Uytterhoeven, Stefano Guerrieri, Andreas Suss, Celso Cavaco, Konstantinos Chatzinis, Jorick Maes, Zeger Hens (UGent) , Paul Heremans and David Cheyns
- Organization
- Abstract
- The integration of infrared sensitive thin-film materials with solution processing capabilities on top of Si substrates is a significant step towards cost-efficient infrared imagers. Colloidal quantum dots based on lead sulfide are very attractive materials for the realization of novel image sensors combining low cost synthesis and processing with deposition over large area and on any substrate. The tunable band gap enables selective detection in wavelengths ranging from the visible up to the short-wave-infrared (SWIR). This work describes the first results of a roadmap that will enable the integration of quantum dot photodiodes (QDPD) on top of a Si based CMOS read-out circuit. Photodiodes using an n-p junction architecture are fabricated on Si substrates, showing low dark current of 30 nA/cm(2) at -1 V reverse bias, EQE above 20% and specific detectivity higher than 10(12) cm Hz(1/2) W-1 at the wavelength of 940 nm. Efficiency is improved by tuning the top contact transparency with optical modeling. Furthermore, photolithographic patterning of the thin-film stack is introduced for the first time, showing the feasibility of pixel pitches down to 40 mu m, opening the way towards high resolution monolithic infrared imagers and the incorporation of infrared sensitive pixels next to visible ones.
- Keywords
- photodiode, infrared, thin-film, monolithic integration, imaging, image, sensor, quantum dots, PbS
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Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-8721170
- MLA
- Georgitzikis, Epimitheas, et al. “NIR Sensors Based on Photolithographically Patterned PbS QD Photodiodes for CMOS Integration.” 2018 IEEE SENSORS, IEEE, 2018, pp. 508–11, doi:10.1109/ICSENS.2018.8589515.
- APA
- Georgitzikis, E., Malinowski, P. E., Hagelsieb, L. M., Pejovic, V., Uytterhoeven, G., Guerrieri, S., … Cheyns, D. (2018). NIR sensors based on photolithographically patterned PbS QD photodiodes for CMOS integration. 2018 IEEE SENSORS, 508–511. https://doi.org/10.1109/ICSENS.2018.8589515
- Chicago author-date
- Georgitzikis, Epimitheas, Pawel E. Malinowski, Luis Moreno Hagelsieb, Vladimir Pejovic, Griet Uytterhoeven, Stefano Guerrieri, Andreas Suss, et al. 2018. “NIR Sensors Based on Photolithographically Patterned PbS QD Photodiodes for CMOS Integration.” In 2018 IEEE SENSORS, 508–11. New york: IEEE. https://doi.org/10.1109/ICSENS.2018.8589515.
- Chicago author-date (all authors)
- Georgitzikis, Epimitheas, Pawel E. Malinowski, Luis Moreno Hagelsieb, Vladimir Pejovic, Griet Uytterhoeven, Stefano Guerrieri, Andreas Suss, Celso Cavaco, Konstantinos Chatzinis, Jorick Maes, Zeger Hens, Paul Heremans, and David Cheyns. 2018. “NIR Sensors Based on Photolithographically Patterned PbS QD Photodiodes for CMOS Integration.” In 2018 IEEE SENSORS, 508–511. New york: IEEE. doi:10.1109/ICSENS.2018.8589515.
- Vancouver
- 1.Georgitzikis E, Malinowski PE, Hagelsieb LM, Pejovic V, Uytterhoeven G, Guerrieri S, et al. NIR sensors based on photolithographically patterned PbS QD photodiodes for CMOS integration. In: 2018 IEEE SENSORS. New york: IEEE; 2018. p. 508–11.
- IEEE
- [1]E. Georgitzikis et al., “NIR sensors based on photolithographically patterned PbS QD photodiodes for CMOS integration,” in 2018 IEEE SENSORS, New Delhi, INDIA, 2018, pp. 508–511.
@inproceedings{8721170,
abstract = {{The integration of infrared sensitive thin-film materials with solution processing capabilities on top of Si substrates is a significant step towards cost-efficient infrared imagers. Colloidal quantum dots based on lead sulfide are very attractive materials for the realization of novel image sensors combining low cost synthesis and processing with deposition over large area and on any substrate. The tunable band gap enables selective detection in wavelengths ranging from the visible up to the short-wave-infrared (SWIR). This work describes the first results of a roadmap that will enable the integration of quantum dot photodiodes (QDPD) on top of a Si based CMOS read-out circuit. Photodiodes using an n-p junction architecture are fabricated on Si substrates, showing low dark current of 30 nA/cm(2) at -1 V reverse bias, EQE above 20% and specific detectivity higher than 10(12) cm Hz(1/2) W-1 at the wavelength of 940 nm. Efficiency is improved by tuning the top contact transparency with optical modeling. Furthermore, photolithographic patterning of the thin-film stack is introduced for the first time, showing the feasibility of pixel pitches down to 40 mu m, opening the way towards high resolution monolithic infrared imagers and the incorporation of infrared sensitive pixels next to visible ones.}},
author = {{Georgitzikis, Epimitheas and Malinowski, Pawel E. and Hagelsieb, Luis Moreno and Pejovic, Vladimir and Uytterhoeven, Griet and Guerrieri, Stefano and Suss, Andreas and Cavaco, Celso and Chatzinis, Konstantinos and Maes, Jorick and Hens, Zeger and Heremans, Paul and Cheyns, David}},
booktitle = {{2018 IEEE SENSORS}},
isbn = {{9781538647073}},
issn = {{1930-0395}},
keywords = {{photodiode,infrared,thin-film,monolithic integration,imaging,image,sensor,quantum dots,PbS}},
language = {{eng}},
location = {{New Delhi, INDIA}},
pages = {{508--511}},
publisher = {{IEEE}},
title = {{NIR sensors based on photolithographically patterned PbS QD photodiodes for CMOS integration}},
url = {{http://doi.org/10.1109/ICSENS.2018.8589515}},
year = {{2018}},
}
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