- Author
- Jie Wang, Zhanfei Chen, Shuzhen You, Benoit Bakeroot (UGent) , Jun Liu and Stefaan Decoutere
- Organization
- Abstract
- We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transistors (HEMTs) which solves the Poisson equation. The model includes all possible charges in the GaN channel layer, including the unintended Mg doping density caused by out-diffusion. The SP equation and its analytical approximate solution provide a high degree of accuracy for the SP calculation, from which the closed-form I-V equations are derived. The proposed model uses physical parameters only and is implemented in Verilog-A code.
- Keywords
- p-GaN gate high-electron mobility transistors, compact model, physics-based models, surface potential
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IT46 Wang MDPI21 Surface potenial based compact modeling of pGaN Gate HEMTs.pdf
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Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-8715718
- MLA
- Wang, Jie, et al. “Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs.” MICROMACHINES, vol. 12, no. 2, 2021, doi:10.3390/mi12020199.
- APA
- Wang, J., Chen, Z., You, S., Bakeroot, B., Liu, J., & Decoutere, S. (2021). Surface-potential-based compact modeling of p-GaN gate HEMTs. MICROMACHINES, 12(2). https://doi.org/10.3390/mi12020199
- Chicago author-date
- Wang, Jie, Zhanfei Chen, Shuzhen You, Benoit Bakeroot, Jun Liu, and Stefaan Decoutere. 2021. “Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs.” MICROMACHINES 12 (2). https://doi.org/10.3390/mi12020199.
- Chicago author-date (all authors)
- Wang, Jie, Zhanfei Chen, Shuzhen You, Benoit Bakeroot, Jun Liu, and Stefaan Decoutere. 2021. “Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs.” MICROMACHINES 12 (2). doi:10.3390/mi12020199.
- Vancouver
- 1.Wang J, Chen Z, You S, Bakeroot B, Liu J, Decoutere S. Surface-potential-based compact modeling of p-GaN gate HEMTs. MICROMACHINES. 2021;12(2).
- IEEE
- [1]J. Wang, Z. Chen, S. You, B. Bakeroot, J. Liu, and S. Decoutere, “Surface-potential-based compact modeling of p-GaN gate HEMTs,” MICROMACHINES, vol. 12, no. 2, 2021.
@article{8715718,
abstract = {{We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transistors (HEMTs) which solves the Poisson equation. The model includes all possible charges in the GaN channel layer, including the unintended Mg doping density caused by out-diffusion. The SP equation and its analytical approximate solution provide a high degree of accuracy for the SP calculation, from which the closed-form I-V equations are derived. The proposed model uses physical parameters only and is implemented in Verilog-A code.}},
articleno = {{199}},
author = {{Wang, Jie and Chen, Zhanfei and You, Shuzhen and Bakeroot, Benoit and Liu, Jun and Decoutere, Stefaan}},
issn = {{2072-666X}},
journal = {{MICROMACHINES}},
keywords = {{p-GaN gate high-electron mobility transistors,compact model,physics-based models,surface potential}},
language = {{eng}},
number = {{2}},
pages = {{9}},
title = {{Surface-potential-based compact modeling of p-GaN gate HEMTs}},
url = {{http://doi.org/10.3390/mi12020199}},
volume = {{12}},
year = {{2021}},
}
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