Schottky gate induced threshold voltage instabilities in p-GaN gate AlGaN/GaN HEMTs
- Author
- Arno Stockman, Eleonora Canato, Matteo Meneghini, Gaudenzio Meneghesso, Peter Moens and Benoit Bakeroot (UGent)
- Organization
- Abstract
- We present detailed ON-state gate current characterization of Schottky gate p-GaN capped AlGaN/GaN high-electron-mobility transistors (HEMTs) on two distinct gate processes. The threshold voltage is monitored from 10 mu s up to 100 s under positive gate bias stress and during recovery. The threshold voltage stability is affected by the balance between hole and electron current in the gate stack. More specifically, devices with uniform hole conduction across the p-GaN gate area demonstrate stable threshold voltage behavior up to V-g = 5V, whereas devices with a dominating gate perimeter electron conduction demonstrate larger instabilities. Finally, the threshold voltage stability during OFF-state pulsed stress is investigated and correlated to the excess gate-to-drain charge extracted from capacitance curves.
- Keywords
- Gallium nitride (GaN), enhancement mode (e-mode), high-electron-mobility transistor (HEMT), p-GaN gate, conduction mechanism, threshold voltage stability, technology computer-aided design (TCAD)
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Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-8715715
- MLA
- Stockman, Arno, et al. “Schottky Gate Induced Threshold Voltage Instabilities in P-GaN Gate AlGaN/GaN HEMTs.” IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, vol. 21, no. 2, 2021, pp. 169–75, doi:10.1109/TDMR.2021.3080585.
- APA
- Stockman, A., Canato, E., Meneghini, M., Meneghesso, G., Moens, P., & Bakeroot, B. (2021). Schottky gate induced threshold voltage instabilities in p-GaN gate AlGaN/GaN HEMTs. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 21(2), 169–175. https://doi.org/10.1109/TDMR.2021.3080585
- Chicago author-date
- Stockman, Arno, Eleonora Canato, Matteo Meneghini, Gaudenzio Meneghesso, Peter Moens, and Benoit Bakeroot. 2021. “Schottky Gate Induced Threshold Voltage Instabilities in P-GaN Gate AlGaN/GaN HEMTs.” IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 21 (2): 169–75. https://doi.org/10.1109/TDMR.2021.3080585.
- Chicago author-date (all authors)
- Stockman, Arno, Eleonora Canato, Matteo Meneghini, Gaudenzio Meneghesso, Peter Moens, and Benoit Bakeroot. 2021. “Schottky Gate Induced Threshold Voltage Instabilities in P-GaN Gate AlGaN/GaN HEMTs.” IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 21 (2): 169–175. doi:10.1109/TDMR.2021.3080585.
- Vancouver
- 1.Stockman A, Canato E, Meneghini M, Meneghesso G, Moens P, Bakeroot B. Schottky gate induced threshold voltage instabilities in p-GaN gate AlGaN/GaN HEMTs. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. 2021;21(2):169–75.
- IEEE
- [1]A. Stockman, E. Canato, M. Meneghini, G. Meneghesso, P. Moens, and B. Bakeroot, “Schottky gate induced threshold voltage instabilities in p-GaN gate AlGaN/GaN HEMTs,” IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, vol. 21, no. 2, pp. 169–175, 2021.
@article{8715715,
abstract = {{We present detailed ON-state gate current characterization of Schottky gate p-GaN capped AlGaN/GaN high-electron-mobility transistors (HEMTs) on two distinct gate processes. The threshold voltage is monitored from 10 mu s up to 100 s under positive gate bias stress and during recovery. The threshold voltage stability is affected by the balance between hole and electron current in the gate stack. More specifically, devices with uniform hole conduction across the p-GaN gate area demonstrate stable threshold voltage behavior up to V-g = 5V, whereas devices with a dominating gate perimeter electron conduction demonstrate larger instabilities. Finally, the threshold voltage stability during OFF-state pulsed stress is investigated and correlated to the excess gate-to-drain charge extracted from capacitance curves.}},
author = {{Stockman, Arno and Canato, Eleonora and Meneghini, Matteo and Meneghesso, Gaudenzio and Moens, Peter and Bakeroot, Benoit}},
issn = {{1530-4388}},
journal = {{IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY}},
keywords = {{Gallium nitride (GaN),enhancement mode (e-mode),high-electron-mobility transistor (HEMT),p-GaN gate,conduction mechanism,threshold voltage stability,technology computer-aided design (TCAD)}},
language = {{eng}},
number = {{2}},
pages = {{169--175}},
title = {{Schottky gate induced threshold voltage instabilities in p-GaN gate AlGaN/GaN HEMTs}},
url = {{http://doi.org/10.1109/TDMR.2021.3080585}},
volume = {{21}},
year = {{2021}},
}
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