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Integration of PbS quantum dot photodiodes on silicon for NIR imaging

Epimitheas Georgitzikis, Pawel E. Malinowski, Yunlong Li, Jorick Maes, Luis Moreno Hagelsieb, Stefano Guerrieri, Zeger Hens (UGent) , Paul Heremans and David Cheyns
(2020) IEEE SENSORS JOURNAL. 20(13). p.6841-6848
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Abstract
Colloidal quantum dots based on lead sulfide (PbS) are very attractive materials for the realization of novel image sensors. They offer low cost synthesis, compatibility with a variety of substrates and processing on large area. The tunable band gap enables selective light detection from the visible wavelengths up to the short-wave-infrared (SWIR). This work describes the roadmap towards the integration of quantum dot photodiodes (QDPD) on top of a Si based CMOS read-out circuit. Photodiodes using an n-p junction architecture are fabricated on Si substrates, showing a dark current of 30 nA/cm(2) at -1 V reverse bias, EQE above 20% and specific detectivity above 10(12) cm Hz(1/2) W-1 at the wavelength of 940 nm. Efficiency is improved by reducing absorption in the top contact through optical design. Furthermore, photolithographic patterning of the thin-film stack is introduced for the first time, showing the feasibility of pixel pitches down to 40 mu m, opening the way towards high resolution monolithic infrared imagers and the incorporation of infrared and visible sensitive pixels side by side.
Keywords
Lead, Photodiodes, Silicon, Dark current, Absorption, Lighting, Quantum dots, Infrared image sensors, infrared imaging, photodetectors, PbS QDs, quantum dots, thin film sensors, CMOS integration, LARGE-AREA, NANOCRYSTALS, ABSORPTION, DETECTORS, SIZE, IR

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MLA
Georgitzikis, Epimitheas, et al. “Integration of PbS Quantum Dot Photodiodes on Silicon for NIR Imaging.” IEEE SENSORS JOURNAL, vol. 20, no. 13, 2020, pp. 6841–48, doi:10.1109/JSEN.2019.2933741.
APA
Georgitzikis, E., Malinowski, P. E., Li, Y., Maes, J., Hagelsieb, L. M., Guerrieri, S., … Cheyns, D. (2020). Integration of PbS quantum dot photodiodes on silicon for NIR imaging. IEEE SENSORS JOURNAL, 20(13), 6841–6848. https://doi.org/10.1109/JSEN.2019.2933741
Chicago author-date
Georgitzikis, Epimitheas, Pawel E. Malinowski, Yunlong Li, Jorick Maes, Luis Moreno Hagelsieb, Stefano Guerrieri, Zeger Hens, Paul Heremans, and David Cheyns. 2020. “Integration of PbS Quantum Dot Photodiodes on Silicon for NIR Imaging.” IEEE SENSORS JOURNAL 20 (13): 6841–48. https://doi.org/10.1109/JSEN.2019.2933741.
Chicago author-date (all authors)
Georgitzikis, Epimitheas, Pawel E. Malinowski, Yunlong Li, Jorick Maes, Luis Moreno Hagelsieb, Stefano Guerrieri, Zeger Hens, Paul Heremans, and David Cheyns. 2020. “Integration of PbS Quantum Dot Photodiodes on Silicon for NIR Imaging.” IEEE SENSORS JOURNAL 20 (13): 6841–6848. doi:10.1109/JSEN.2019.2933741.
Vancouver
1.
Georgitzikis E, Malinowski PE, Li Y, Maes J, Hagelsieb LM, Guerrieri S, et al. Integration of PbS quantum dot photodiodes on silicon for NIR imaging. IEEE SENSORS JOURNAL. 2020;20(13):6841–8.
IEEE
[1]
E. Georgitzikis et al., “Integration of PbS quantum dot photodiodes on silicon for NIR imaging,” IEEE SENSORS JOURNAL, vol. 20, no. 13, pp. 6841–6848, 2020.
@article{8704780,
  abstract     = {{Colloidal quantum dots based on lead sulfide (PbS) are very attractive materials for the realization of novel image sensors. They offer low cost synthesis, compatibility with a variety of substrates and processing on large area. The tunable band gap enables selective light detection from the visible wavelengths up to the short-wave-infrared (SWIR). This work describes the roadmap towards the integration of quantum dot photodiodes (QDPD) on top of a Si based CMOS read-out circuit. Photodiodes using an n-p junction architecture are fabricated on Si substrates, showing a dark current of 30 nA/cm(2) at -1 V reverse bias, EQE above 20% and specific detectivity above 10(12) cm Hz(1/2) W-1 at the wavelength of 940 nm. Efficiency is improved by reducing absorption in the top contact through optical design. Furthermore, photolithographic patterning of the thin-film stack is introduced for the first time, showing the feasibility of pixel pitches down to 40 mu m, opening the way towards high resolution monolithic infrared imagers and the incorporation of infrared and visible sensitive pixels side by side.}},
  author       = {{Georgitzikis, Epimitheas and Malinowski, Pawel E. and Li, Yunlong and Maes, Jorick and Hagelsieb, Luis Moreno and Guerrieri, Stefano and Hens, Zeger and Heremans, Paul and Cheyns, David}},
  issn         = {{1530-437X}},
  journal      = {{IEEE SENSORS JOURNAL}},
  keywords     = {{Lead,Photodiodes,Silicon,Dark current,Absorption,Lighting,Quantum dots,Infrared image sensors,infrared imaging,photodetectors,PbS QDs,quantum dots,thin film sensors,CMOS integration,LARGE-AREA,NANOCRYSTALS,ABSORPTION,DETECTORS,SIZE,IR}},
  language     = {{eng}},
  number       = {{13}},
  pages        = {{6841--6848}},
  title        = {{Integration of PbS quantum dot photodiodes on silicon for NIR imaging}},
  url          = {{http://doi.org/10.1109/JSEN.2019.2933741}},
  volume       = {{20}},
  year         = {{2020}},
}
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