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Boosting room-temperature magneto-ionics in a non-magnetic oxide semiconductor

Julius de Rojas, Alberto Quintana, Aitor Lopeandia, Joaquin Salguero, Jose L. Costa-Kramer, Llibertat Abad, Maciej O. Liedke, Maik Butterling, Andreas Wagner, Lowie Henderick (UGent) , et al.
(2020) ADVANCED FUNCTIONAL MATERIALS. 30(36).
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Abstract
Voltage control of magnetism through electric field-induced oxygen motion (magneto-ionics) could represent a significant breakthrough in the pursuit for new strategies to enhance energy efficiency in magnetically actuated devices. Boosting the induced changes in magnetization, magneto-ionic rates and cyclability continue to be key challenges to turn magneto-ionics into real applications. Here, it is demonstrated that room-temperature magneto-ionic effects in electrolyte-gated paramagnetic Co(3)O(4)films can be largely increased both in terms of generated magnetization (6 times larger) and speed (35 times faster) if the electric field is applied using an electrochemical capacitor configuration (utilizing an underlying conducting buffer layer) instead of placing the electric contacts at the side of the semiconductor (electric-double-layer transistor-like configuration). This is due to the greater uniformity and strength of the electric field in the capacitor design. These results are appealing to widen the use of ion migration in technological applications such as neuromorphic computing or iontronics in general.
Keywords
capacitors, low-power spintronics, magnetoelectric effects, magneto-ionics, transistors, MAGNETIZATION, FERROMAGNETISM

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MLA
de Rojas, Julius, et al. “Boosting Room-Temperature Magneto-Ionics in a Non-Magnetic Oxide Semiconductor.” ADVANCED FUNCTIONAL MATERIALS, vol. 30, no. 36, 2020, doi:10.1002/adfm.202003704.
APA
de Rojas, J., Quintana, A., Lopeandia, A., Salguero, J., Costa-Kramer, J. L., Abad, L., … Menendez, E. (2020). Boosting room-temperature magneto-ionics in a non-magnetic oxide semiconductor. ADVANCED FUNCTIONAL MATERIALS, 30(36). https://doi.org/10.1002/adfm.202003704
Chicago author-date
Rojas, Julius de, Alberto Quintana, Aitor Lopeandia, Joaquin Salguero, Jose L. Costa-Kramer, Llibertat Abad, Maciej O. Liedke, et al. 2020. “Boosting Room-Temperature Magneto-Ionics in a Non-Magnetic Oxide Semiconductor.” ADVANCED FUNCTIONAL MATERIALS 30 (36). https://doi.org/10.1002/adfm.202003704.
Chicago author-date (all authors)
de Rojas, Julius, Alberto Quintana, Aitor Lopeandia, Joaquin Salguero, Jose L. Costa-Kramer, Llibertat Abad, Maciej O. Liedke, Maik Butterling, Andreas Wagner, Lowie Henderick, Jolien Dendooven, Christophe Detavernier, Jordi Sort, and Enric Menendez. 2020. “Boosting Room-Temperature Magneto-Ionics in a Non-Magnetic Oxide Semiconductor.” ADVANCED FUNCTIONAL MATERIALS 30 (36). doi:10.1002/adfm.202003704.
Vancouver
1.
de Rojas J, Quintana A, Lopeandia A, Salguero J, Costa-Kramer JL, Abad L, et al. Boosting room-temperature magneto-ionics in a non-magnetic oxide semiconductor. ADVANCED FUNCTIONAL MATERIALS. 2020;30(36).
IEEE
[1]
J. de Rojas et al., “Boosting room-temperature magneto-ionics in a non-magnetic oxide semiconductor,” ADVANCED FUNCTIONAL MATERIALS, vol. 30, no. 36, 2020.
@article{8690478,
  abstract     = {{Voltage control of magnetism through electric field-induced oxygen motion (magneto-ionics) could represent a significant breakthrough in the pursuit for new strategies to enhance energy efficiency in magnetically actuated devices. Boosting the induced changes in magnetization, magneto-ionic rates and cyclability continue to be key challenges to turn magneto-ionics into real applications. Here, it is demonstrated that room-temperature magneto-ionic effects in electrolyte-gated paramagnetic Co(3)O(4)films can be largely increased both in terms of generated magnetization (6 times larger) and speed (35 times faster) if the electric field is applied using an electrochemical capacitor configuration (utilizing an underlying conducting buffer layer) instead of placing the electric contacts at the side of the semiconductor (electric-double-layer transistor-like configuration). This is due to the greater uniformity and strength of the electric field in the capacitor design. These results are appealing to widen the use of ion migration in technological applications such as neuromorphic computing or iontronics in general.}},
  articleno    = {{2003704}},
  author       = {{de Rojas, Julius and Quintana, Alberto and Lopeandia, Aitor and Salguero, Joaquin and Costa-Kramer, Jose L. and Abad, Llibertat and Liedke, Maciej O. and Butterling, Maik and Wagner, Andreas and Henderick, Lowie and Dendooven, Jolien and Detavernier, Christophe and Sort, Jordi and Menendez, Enric}},
  issn         = {{1616-301X}},
  journal      = {{ADVANCED FUNCTIONAL MATERIALS}},
  keywords     = {{capacitors,low-power spintronics,magnetoelectric effects,magneto-ionics,transistors,MAGNETIZATION,FERROMAGNETISM}},
  language     = {{eng}},
  number       = {{36}},
  pages        = {{10}},
  title        = {{Boosting room-temperature magneto-ionics in a non-magnetic oxide semiconductor}},
  url          = {{http://doi.org/10.1002/adfm.202003704}},
  volume       = {{30}},
  year         = {{2020}},
}
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