Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride photonic integrated circuits
- Author
- Jeroen Goyvaerts, Sulakshna Kumari (UGent) , Sarah Uvin (UGent) , Jing Zhang (UGent) , Roel Baets (UGent) , Agnieszka Gocalinska, Emanuele Pelucchi, Brian Corbett and Günther Roelkens (UGent)
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- Project
- Abstract
- We demonstrate the integration of GaAs p-i-n photodiodes onto silicon nitride grating couplers by means of transfer-printing. Dark currents below 20 pA and waveguide-coupled responsivities of 0.30 A/W are obtained. The detectors are integrated with an on-chip near-infrared spectrometer.
- Keywords
- Transfer-printing, GaAs, photodiode, AWG
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Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-8689979
- MLA
- Goyvaerts, Jeroen, et al. “Transfer-Print Integration of GaAs p-i-n Photodiodes onto Silicon Nitride Photonic Integrated Circuits.” 2020 IEEE Photonics Conference (IPC), IEEE, 2020, doi:10.1109/ipc47351.2020.9252495.
- APA
- Goyvaerts, J., Kumari, S., Uvin, S., Zhang, J., Baets, R., Gocalinska, A., … Roelkens, G. (2020). Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride photonic integrated circuits. 2020 IEEE Photonics Conference (IPC). Presented at the IEEE Photonics Conference (IPC), Vancouver (Virtual event), Canada. https://doi.org/10.1109/ipc47351.2020.9252495
- Chicago author-date
- Goyvaerts, Jeroen, Sulakshna Kumari, Sarah Uvin, Jing Zhang, Roel Baets, Agnieszka Gocalinska, Emanuele Pelucchi, Brian Corbett, and Günther Roelkens. 2020. “Transfer-Print Integration of GaAs p-i-n Photodiodes onto Silicon Nitride Photonic Integrated Circuits.” In 2020 IEEE Photonics Conference (IPC). New York: IEEE. https://doi.org/10.1109/ipc47351.2020.9252495.
- Chicago author-date (all authors)
- Goyvaerts, Jeroen, Sulakshna Kumari, Sarah Uvin, Jing Zhang, Roel Baets, Agnieszka Gocalinska, Emanuele Pelucchi, Brian Corbett, and Günther Roelkens. 2020. “Transfer-Print Integration of GaAs p-i-n Photodiodes onto Silicon Nitride Photonic Integrated Circuits.” In 2020 IEEE Photonics Conference (IPC). New York: IEEE. doi:10.1109/ipc47351.2020.9252495.
- Vancouver
- 1.Goyvaerts J, Kumari S, Uvin S, Zhang J, Baets R, Gocalinska A, et al. Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride photonic integrated circuits. In: 2020 IEEE Photonics Conference (IPC). New York: IEEE; 2020.
- IEEE
- [1]J. Goyvaerts et al., “Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride photonic integrated circuits,” in 2020 IEEE Photonics Conference (IPC), Vancouver (Virtual event), Canada, 2020.
@inproceedings{8689979,
abstract = {{We demonstrate the integration of GaAs p-i-n photodiodes onto silicon nitride grating couplers by means of transfer-printing. Dark currents below 20 pA and waveguide-coupled responsivities of 0.30 A/W are obtained. The detectors are integrated with an on-chip near-infrared spectrometer.}},
author = {{Goyvaerts, Jeroen and Kumari, Sulakshna and Uvin, Sarah and Zhang, Jing and Baets, Roel and Gocalinska, Agnieszka and Pelucchi, Emanuele and Corbett, Brian and Roelkens, Günther}},
booktitle = {{2020 IEEE Photonics Conference (IPC)}},
isbn = {{9781728158914}},
issn = {{2374-0140}},
keywords = {{Transfer-printing,GaAs,photodiode,AWG}},
language = {{eng}},
location = {{Vancouver (Virtual event), Canada}},
pages = {{2}},
publisher = {{IEEE}},
title = {{Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride photonic integrated circuits}},
url = {{http://doi.org/10.1109/ipc47351.2020.9252495}},
year = {{2020}},
}
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