InGaAs/GaAs multi-quantum well nano-ridge waveguide photodetector epitaxially grown on a 300-mm Si wafer
- Author
- Cenk Ibrahim Özdemir (UGent) , Y. De Koninck, N. Kuznetsova, M. Baryshnikova, Dries Van Thourhout (UGent) , B. Kunert, M. Pantouvaki and J. Van Campenhout
- Organization
- Abstract
- We demonstrate p-i-n InGaAs/GaAs quantum well nano-ridge waveguide photodetectors epitaxially grown and fully processed on a 300mm Si wafer. The devices exhibit low dark currents of 10pA, current density of 1. 43 × 10 -5 A/cm 2 , at -1V bias and internal responsivities of 0.48A/W at 1020nm wavelength.
- Keywords
- silicon photonics, monolithic integration, III-V photodetectors
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Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-8681354
- MLA
- Özdemir, Cenk Ibrahim, et al. “InGaAs/GaAs Multi-Quantum Well Nano-Ridge Waveguide Photodetector Epitaxially Grown on a 300-Mm Si Wafer.” 2020 IEEE Photonics Conference (IPC), IEEE, 2020, doi:10.1109/IPC47351.2020.9252262.
- APA
- Özdemir, C. I., De Koninck, Y., Kuznetsova, N., Baryshnikova, M., Van Thourhout, D., Kunert, B., … Van Campenhout, J. (2020). InGaAs/GaAs multi-quantum well nano-ridge waveguide photodetector epitaxially grown on a 300-mm Si wafer. 2020 IEEE Photonics Conference (IPC). Presented at the 2020 IEEE Photonics Conference (IPC), Vancouver, BC, Canada. https://doi.org/10.1109/IPC47351.2020.9252262
- Chicago author-date
- Özdemir, Cenk Ibrahim, Y. De Koninck, N. Kuznetsova, M. Baryshnikova, Dries Van Thourhout, B. Kunert, M. Pantouvaki, and J. Van Campenhout. 2020. “InGaAs/GaAs Multi-Quantum Well Nano-Ridge Waveguide Photodetector Epitaxially Grown on a 300-Mm Si Wafer.” In 2020 IEEE Photonics Conference (IPC). New York: IEEE. https://doi.org/10.1109/IPC47351.2020.9252262.
- Chicago author-date (all authors)
- Özdemir, Cenk Ibrahim, Y. De Koninck, N. Kuznetsova, M. Baryshnikova, Dries Van Thourhout, B. Kunert, M. Pantouvaki, and J. Van Campenhout. 2020. “InGaAs/GaAs Multi-Quantum Well Nano-Ridge Waveguide Photodetector Epitaxially Grown on a 300-Mm Si Wafer.” In 2020 IEEE Photonics Conference (IPC). New York: IEEE. doi:10.1109/IPC47351.2020.9252262.
- Vancouver
- 1.Özdemir CI, De Koninck Y, Kuznetsova N, Baryshnikova M, Van Thourhout D, Kunert B, et al. InGaAs/GaAs multi-quantum well nano-ridge waveguide photodetector epitaxially grown on a 300-mm Si wafer. In: 2020 IEEE Photonics Conference (IPC). New York: IEEE; 2020.
- IEEE
- [1]C. I. Özdemir et al., “InGaAs/GaAs multi-quantum well nano-ridge waveguide photodetector epitaxially grown on a 300-mm Si wafer,” in 2020 IEEE Photonics Conference (IPC), Vancouver, BC, Canada, 2020.
@inproceedings{8681354,
abstract = {{We demonstrate p-i-n InGaAs/GaAs quantum well nano-ridge waveguide photodetectors epitaxially grown and fully processed on a 300mm Si wafer. The devices exhibit low dark currents of 10pA, current density of 1. 43 × 10 -5 A/cm 2 , at -1V bias and internal responsivities of 0.48A/W at 1020nm wavelength.}},
author = {{Özdemir, Cenk Ibrahim and De Koninck, Y. and Kuznetsova, N. and Baryshnikova, M. and Van Thourhout, Dries and Kunert, B. and Pantouvaki, M. and Van Campenhout, J.}},
booktitle = {{2020 IEEE Photonics Conference (IPC)}},
isbn = {{9781728158914}},
issn = {{2575-274X}},
keywords = {{silicon photonics,monolithic integration,III-V photodetectors}},
language = {{eng}},
location = {{Vancouver, BC, Canada}},
pages = {{2}},
publisher = {{IEEE}},
title = {{InGaAs/GaAs multi-quantum well nano-ridge waveguide photodetector epitaxially grown on a 300-mm Si wafer}},
url = {{http://doi.org/10.1109/IPC47351.2020.9252262}},
year = {{2020}},
}
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