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GaN-on-SOI : monolithically integrated All-GaN ICs for power conversion

X. Li, N; Amirifar, K. Geens, M. Zhao, W. Guo, H. Liang, S. You, N. Posthuma, B. De Jaeger, S. Stoffels, et al.
(2019) 2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM). In IEEE International Electron Devices Meeting
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Abstract
We report the first comprehensive research about GaN power integrated circuits (ICs) on GaN-on-SOI (silicon-on-insulator). Specific stepped (Al)GaN superlattice buffer and highly robust deep trench isolation are developed. Various components including HEMT, metal-insulator-metal (MIM) capacitor, Schottky barrier diode (SBD), two-dimensional electron gas (2DEG) resistor, and resistor-transistor logic (RTL) are co-integrated, compatible with the p-GaN technology. Based on these achievements, 200 V GaN HEMT with integrated driver shows an extraordinary switching performance. A 48V-to-1V single-stage buck converter is realized using a GaN half-bridge with integrated on-chip drivers. Further, an all-GaN buck converter containing a smart control pulse-width modulation (PWM) circuit, dead-time control, drivers, and half-bridge is successfully designed using the GaN IC platform process design kit (PDK).

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MLA
Li, X., et al. “GaN-on-SOI : Monolithically Integrated All-GaN ICs for Power Conversion.” 2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), IEEE, 2019, doi:10.1109/IEDM19573.2019.8993572.
APA
Li, X., Amirifar, N., Geens, K., Zhao, M., Guo, W., Liang, H., … Decoutere, S. (2019). GaN-on-SOI : monolithically integrated All-GaN ICs for power conversion. 2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM). Presented at the 65th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA. https://doi.org/10.1109/IEDM19573.2019.8993572
Chicago author-date
Li, X., N; Amirifar, K. Geens, M. Zhao, W. Guo, H. Liang, S. You, et al. 2019. “GaN-on-SOI : Monolithically Integrated All-GaN ICs for Power Conversion.” In 2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM). IEEE. https://doi.org/10.1109/IEDM19573.2019.8993572.
Chicago author-date (all authors)
Li, X., N; Amirifar, K. Geens, M. Zhao, W. Guo, H. Liang, S. You, N. Posthuma, B. De Jaeger, S. Stoffels, Benoit Bakeroot, D. Wellekens, B. Vanhove, T. Cosnier, R. Langer, D. Marcon, G. Groeseneken, and S. Decoutere. 2019. “GaN-on-SOI : Monolithically Integrated All-GaN ICs for Power Conversion.” In 2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM). IEEE. doi:10.1109/IEDM19573.2019.8993572.
Vancouver
1.
Li X, Amirifar N, Geens K, Zhao M, Guo W, Liang H, et al. GaN-on-SOI : monolithically integrated All-GaN ICs for power conversion. In: 2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM). IEEE; 2019.
IEEE
[1]
X. Li et al., “GaN-on-SOI : monolithically integrated All-GaN ICs for power conversion,” in 2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), San Francisco, CA, 2019.
@inproceedings{8678836,
  abstract     = {{We report the first comprehensive research about GaN power integrated circuits (ICs) on GaN-on-SOI (silicon-on-insulator). Specific stepped (Al)GaN superlattice buffer and highly robust deep trench isolation are developed. Various components including HEMT, metal-insulator-metal (MIM) capacitor, Schottky barrier diode (SBD), two-dimensional electron gas (2DEG) resistor, and resistor-transistor logic (RTL) are co-integrated, compatible with the p-GaN technology. Based on these achievements, 200 V GaN HEMT with integrated driver shows an extraordinary switching performance. A 48V-to-1V single-stage buck converter is realized using a GaN half-bridge with integrated on-chip drivers. Further, an all-GaN buck converter containing a smart control pulse-width modulation (PWM) circuit, dead-time control, drivers, and half-bridge is successfully designed using the GaN IC platform process design kit (PDK).}},
  author       = {{Li, X. and Amirifar, N; and Geens, K. and Zhao, M. and Guo, W. and Liang, H. and You, S. and Posthuma, N. and De Jaeger, B. and Stoffels, S. and Bakeroot, Benoit and Wellekens, D. and Vanhove, B. and Cosnier, T. and Langer, R. and Marcon, D. and Groeseneken, G. and Decoutere, S.}},
  booktitle    = {{2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)}},
  isbn         = {{9781728140339}},
  issn         = {{0163-1918}},
  language     = {{eng}},
  location     = {{San Francisco, CA}},
  publisher    = {{IEEE}},
  title        = {{GaN-on-SOI : monolithically integrated All-GaN ICs for power conversion}},
  url          = {{http://doi.org/10.1109/IEDM19573.2019.8993572}},
  year         = {{2019}},
}
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