Advanced search
1 file | 3.85 MB Add to list

Micro‐transfer‐printed III‐V‐on‐silicon C‐band semiconductor optical amplifiers

Author
Organization
Project
Abstract
The micro-transfer-printing of prefabricated C-band semiconductor optical amplifiers (SOAs) on a silicon waveguide circuit is reported. The SOAs are 1.35 mm in length and 40 mu m in width. Dense arrays of III-V SOAs are fabricated on the source InP wafer. These can then be micro-transfer-printed on the target SOI photonic circuits in a massively parallel fashion. Additionally, this approach allows for greater flexibility in terms of integrating different epitaxial layer structures on the same SOI waveguide circuit. The technique allows integrating SOAs on a complex silicon photonic circuit platform without changing the foundry process-flow. Two different SOA designs with different optical confinement factor in the quantum wells of the III-V waveguide are discussed. This allows tuning the small-signal gain and output saturation power of the SOA. The design with higher optical confinement in the quantum wells has a small-signal gain of up to 23 dB and an on-chip saturation power of 9.2 mW at 140 mA bias current and the lower optical confinement factor design has a small-signal gain of 17 dB and power saturation of 15 mW at 160 mA of bias current.
Keywords
Atomic and Molecular Physics, Optics, Electronic, Optical and Magnetic Materials, Condensed Matter Physics, heterogenous integration, SOA, transfer printing, INTEGRATION

Downloads

  • pub 2549.pdf
    • full text (Published version)
    • |
    • open access
    • |
    • PDF
    • |
    • 3.85 MB

Citation

Please use this url to cite or link to this publication:

MLA
Haq, Bahawal, et al. “Micro‐transfer‐printed III‐V‐on‐silicon C‐band Semiconductor Optical Amplifiers.” LASER & PHOTONICS REVIEWS, vol. 14, no. 7, 2020, doi:10.1002/lpor.201900364.
APA
Haq, B., Kumari, S., Van Gasse, K., Zhang, J., Gocalinska, A., Pelucchi, E., … Roelkens, G. (2020). Micro‐transfer‐printed III‐V‐on‐silicon C‐band semiconductor optical amplifiers. LASER & PHOTONICS REVIEWS, 14(7). https://doi.org/10.1002/lpor.201900364
Chicago author-date
Haq, Bahawal, Sulakshna Kumari, Kasper Van Gasse, Jing Zhang, Agnieszka Gocalinska, Emanuele Pelucchi, Brian Corbett, and Günther Roelkens. 2020. “Micro‐transfer‐printed III‐V‐on‐silicon C‐band Semiconductor Optical Amplifiers.” LASER & PHOTONICS REVIEWS 14 (7). https://doi.org/10.1002/lpor.201900364.
Chicago author-date (all authors)
Haq, Bahawal, Sulakshna Kumari, Kasper Van Gasse, Jing Zhang, Agnieszka Gocalinska, Emanuele Pelucchi, Brian Corbett, and Günther Roelkens. 2020. “Micro‐transfer‐printed III‐V‐on‐silicon C‐band Semiconductor Optical Amplifiers.” LASER & PHOTONICS REVIEWS 14 (7). doi:10.1002/lpor.201900364.
Vancouver
1.
Haq B, Kumari S, Van Gasse K, Zhang J, Gocalinska A, Pelucchi E, et al. Micro‐transfer‐printed III‐V‐on‐silicon C‐band semiconductor optical amplifiers. LASER & PHOTONICS REVIEWS. 2020;14(7).
IEEE
[1]
B. Haq et al., “Micro‐transfer‐printed III‐V‐on‐silicon C‐band semiconductor optical amplifiers,” LASER & PHOTONICS REVIEWS, vol. 14, no. 7, 2020.
@article{8676644,
  abstract     = {{The micro-transfer-printing of prefabricated C-band semiconductor optical amplifiers (SOAs) on a silicon waveguide circuit is reported. The SOAs are 1.35 mm in length and 40 mu m in width. Dense arrays of III-V SOAs are fabricated on the source InP wafer. These can then be micro-transfer-printed on the target SOI photonic circuits in a massively parallel fashion. Additionally, this approach allows for greater flexibility in terms of integrating different epitaxial layer structures on the same SOI waveguide circuit. The technique allows integrating SOAs on a complex silicon photonic circuit platform without changing the foundry process-flow. Two different SOA designs with different optical confinement factor in the quantum wells of the III-V waveguide are discussed. This allows tuning the small-signal gain and output saturation power of the SOA. The design with higher optical confinement in the quantum wells has a small-signal gain of up to 23 dB and an on-chip saturation power of 9.2 mW at 140 mA bias current and the lower optical confinement factor design has a small-signal gain of 17 dB and power saturation of 15 mW at 160 mA of bias current.}},
  articleno    = {{1900364}},
  author       = {{Haq, Bahawal and Kumari, Sulakshna and Van Gasse, Kasper and Zhang, Jing and Gocalinska, Agnieszka and Pelucchi, Emanuele and Corbett, Brian and Roelkens, Günther}},
  issn         = {{1863-8880}},
  journal      = {{LASER & PHOTONICS REVIEWS}},
  keywords     = {{Atomic and Molecular Physics,Optics,Electronic,Optical and Magnetic Materials,Condensed Matter Physics,heterogenous integration,SOA,transfer printing,INTEGRATION}},
  language     = {{eng}},
  number       = {{7}},
  pages        = {{12}},
  title        = {{Micro‐transfer‐printed III‐V‐on‐silicon C‐band semiconductor optical amplifiers}},
  url          = {{http://dx.doi.org/10.1002/lpor.201900364}},
  volume       = {{14}},
  year         = {{2020}},
}

Altmetric
View in Altmetric
Web of Science
Times cited: