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A 25Gbaud PAM-4 linear burst-mode receiver with analog gain- and offset control in 0.25 mu m SiGe:C BiCMOS

Gertjan Coudyzer (UGent) , Peter Ossieur (UGent) , Johan Bauwelinck (UGent) and Xin Yin (UGent)
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Abstract
We present a burst-mode receiver (BMRx) whose architecture and design is optimized for linear operation up to 25Gbaud modulation rates. The linear burst-mode receiver (LBMRx) consists of a fixed-gain transimpedance amplifier, followed by a three-stage post-amplifier and a 50-ohm output buffer. The gain of the post-amplifier stages and dc-offsets of the datapath can be quickly adjusted from one burst to the next through combined feedforward (providing rapid settling) and feedback (providing accurate gain and offset control) automatic-gain-control (AGC) and automatic-offset-control (AOC) loops. When receiving 25G NRZ and assembled with a PIN photodetector, a sensitivity of -18.1 dBm and overload of at least 3.5 dBm was measured at a bit-error-rate (BER) of 1E-2, thus supporting a 21.6 dB input dynamic range. When receiving 4-level pulse amplitude modulation (PAM-4), a sensitivity of -11.4 dBm and overload of at least 4.4 dBm was measured at a low-density-parity-check (LDPC) BER reference of 1E-2, supporting 15.8 dB dynamic range. Between -10 up to 3.5 dBm the LBMRx also features internal start-of-burst (SOB) and end-of-burst (EOB) detection. Over the specified input dynamic range, the total harmonic distortion (THD) remains below 5%. The receiver was designed in a 0.25 mu m SiGe:C BiCMOS technology, occupying an area of 1.32 x 1.05 mm(2) and consumes 280 mW from a 2.5 V supply. This LBMRx can be used as front-end for new upcoming passive optical networks (PONs) that may require, e.g., electronic equalization (to overcome bandwidth limitations of opto-electronic components) or dispersion compensation; or may be used to support advanced modulation formats requiring linear operation.
Keywords
EQUALIZATION, Receivers, Gain, Detectors, Gain control, BiCMOS integrated circuits, Passive optical networks, Optical distortion, 4-level pulse amplitude, modulation, Access network, linear burst-mode receiver, non-return-to-zero, passive optical network, transimpedance amplifier

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MLA
Coudyzer, Gertjan, et al. “A 25Gbaud PAM-4 Linear Burst-Mode Receiver with Analog Gain- and Offset Control in 0.25 Mu m SiGe:C BiCMOS.” IEEE JOURNAL OF SOLID-STATE CIRCUITS, vol. 55, no. 8, 2020, pp. 2206–18, doi:10.1109/JSSC.2020.2987680.
APA
Coudyzer, G., Ossieur, P., Bauwelinck, J., & Yin, X. (2020). A 25Gbaud PAM-4 linear burst-mode receiver with analog gain- and offset control in 0.25 mu m SiGe:C BiCMOS. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 55(8), 2206–2218. https://doi.org/10.1109/JSSC.2020.2987680
Chicago author-date
Coudyzer, Gertjan, Peter Ossieur, Johan Bauwelinck, and Xin Yin. 2020. “A 25Gbaud PAM-4 Linear Burst-Mode Receiver with Analog Gain- and Offset Control in 0.25 Mu m SiGe:C BiCMOS.” IEEE JOURNAL OF SOLID-STATE CIRCUITS 55 (8): 2206–18. https://doi.org/10.1109/JSSC.2020.2987680.
Chicago author-date (all authors)
Coudyzer, Gertjan, Peter Ossieur, Johan Bauwelinck, and Xin Yin. 2020. “A 25Gbaud PAM-4 Linear Burst-Mode Receiver with Analog Gain- and Offset Control in 0.25 Mu m SiGe:C BiCMOS.” IEEE JOURNAL OF SOLID-STATE CIRCUITS 55 (8): 2206–2218. doi:10.1109/JSSC.2020.2987680.
Vancouver
1.
Coudyzer G, Ossieur P, Bauwelinck J, Yin X. A 25Gbaud PAM-4 linear burst-mode receiver with analog gain- and offset control in 0.25 mu m SiGe:C BiCMOS. IEEE JOURNAL OF SOLID-STATE CIRCUITS. 2020;55(8):2206–18.
IEEE
[1]
G. Coudyzer, P. Ossieur, J. Bauwelinck, and X. Yin, “A 25Gbaud PAM-4 linear burst-mode receiver with analog gain- and offset control in 0.25 mu m SiGe:C BiCMOS,” IEEE JOURNAL OF SOLID-STATE CIRCUITS, vol. 55, no. 8, pp. 2206–2218, 2020.
@article{8673050,
  abstract     = {We present a burst-mode receiver (BMRx) whose architecture and design is optimized for linear operation up to 25Gbaud modulation rates. The linear burst-mode receiver (LBMRx) consists of a fixed-gain transimpedance amplifier, followed by a three-stage post-amplifier and a 50-ohm output buffer. The gain of the post-amplifier stages and dc-offsets of the datapath can be quickly adjusted from one burst to the next through combined feedforward (providing rapid settling) and feedback (providing accurate gain and offset control) automatic-gain-control (AGC) and automatic-offset-control (AOC) loops. When receiving 25G NRZ and assembled with a PIN photodetector, a sensitivity of -18.1 dBm and overload of at least 3.5 dBm was measured at a bit-error-rate (BER) of 1E-2, thus supporting a 21.6 dB input dynamic range. When receiving 4-level pulse amplitude modulation (PAM-4), a sensitivity of -11.4 dBm and overload of at least 4.4 dBm was measured at a low-density-parity-check (LDPC) BER reference of 1E-2, supporting 15.8 dB dynamic range. Between -10 up to 3.5 dBm the LBMRx also features internal start-of-burst (SOB) and end-of-burst (EOB) detection. Over the specified input dynamic range, the total harmonic distortion (THD) remains below 5%. The receiver was designed in a 0.25 mu m SiGe:C BiCMOS technology, occupying an area of 1.32 x 1.05 mm(2) and consumes 280 mW from a 2.5 V supply. This LBMRx can be used as front-end for new upcoming passive optical networks (PONs) that may require, e.g., electronic equalization (to overcome bandwidth limitations of opto-electronic components) or dispersion compensation; or may be used to support advanced modulation formats requiring linear operation.},
  author       = {Coudyzer, Gertjan and Ossieur, Peter and Bauwelinck, Johan and Yin, Xin},
  issn         = {0018-9200},
  journal      = {IEEE JOURNAL OF SOLID-STATE CIRCUITS},
  keywords     = {EQUALIZATION,Receivers,Gain,Detectors,Gain control,BiCMOS integrated circuits,Passive optical networks,Optical distortion,4-level pulse amplitude,modulation,Access network,linear burst-mode receiver,non-return-to-zero,passive optical network,transimpedance amplifier},
  language     = {eng},
  number       = {8},
  pages        = {2206--2218},
  title        = {A 25Gbaud PAM-4 linear burst-mode receiver with analog gain- and offset control in 0.25 mu m SiGe:C BiCMOS},
  url          = {http://dx.doi.org/10.1109/JSSC.2020.2987680},
  volume       = {55},
  year         = {2020},
}

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