High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode
- Author
- FY Gardes, A Brimont, P Sanchis, G Rasigade, D Marris-Morini, L O'Faolain, F Dong, JM Fedeli, Pieter Dumon (UGent) , L Vivien, TF Krauss, GT Reed and J Marti
- Organization
- Abstract
- High speed modulation based on a compact silicon ring resonator operating in depletion mode is demonstrated. The device exhibits an electrical small signal bandwidth of 19GHz. The device is therefore a candidate for highly compact, wide bandwidth modulators for a variety of applications. (C) 2009 Optical Society of America
- Keywords
- CARRIER-DEPLETION, OPTICAL MODULATION
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Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-866689
- MLA
- Gardes, FY, et al. “High-Speed Modulation of a Compact Silicon Ring Resonator Based on a Reverse-Biased Pn Diode.” OPTICS EXPRESS, vol. 17, no. 24, 2009, pp. 21986–91, doi:10.1364/OE.17.021986.
- APA
- Gardes, F., Brimont, A., Sanchis, P., Rasigade, G., Marris-Morini, D., O’Faolain, L., … Marti, J. (2009). High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode. OPTICS EXPRESS, 17(24), 21986–21991. https://doi.org/10.1364/OE.17.021986
- Chicago author-date
- Gardes, FY, A Brimont, P Sanchis, G Rasigade, D Marris-Morini, L O’Faolain, F Dong, et al. 2009. “High-Speed Modulation of a Compact Silicon Ring Resonator Based on a Reverse-Biased Pn Diode.” OPTICS EXPRESS 17 (24): 21986–91. https://doi.org/10.1364/OE.17.021986.
- Chicago author-date (all authors)
- Gardes, FY, A Brimont, P Sanchis, G Rasigade, D Marris-Morini, L O’Faolain, F Dong, JM Fedeli, Pieter Dumon, L Vivien, TF Krauss, GT Reed, and J Marti. 2009. “High-Speed Modulation of a Compact Silicon Ring Resonator Based on a Reverse-Biased Pn Diode.” OPTICS EXPRESS 17 (24): 21986–21991. doi:10.1364/OE.17.021986.
- Vancouver
- 1.Gardes F, Brimont A, Sanchis P, Rasigade G, Marris-Morini D, O’Faolain L, et al. High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode. OPTICS EXPRESS. 2009;17(24):21986–91.
- IEEE
- [1]F. Gardes et al., “High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode,” OPTICS EXPRESS, vol. 17, no. 24, pp. 21986–21991, 2009.
@article{866689,
abstract = {{High speed modulation based on a compact silicon ring resonator operating in depletion mode is demonstrated. The device exhibits an electrical small signal bandwidth of 19GHz. The device is therefore a candidate for highly compact, wide bandwidth modulators for a variety of applications. (C) 2009 Optical Society of America}},
author = {{Gardes, FY and Brimont, A and Sanchis, P and Rasigade, G and Marris-Morini, D and O'Faolain, L and Dong, F and Fedeli, JM and Dumon, Pieter and Vivien, L and Krauss, TF and Reed, GT and Marti, J}},
issn = {{1094-4087}},
journal = {{OPTICS EXPRESS}},
keywords = {{CARRIER-DEPLETION,OPTICAL MODULATION}},
language = {{eng}},
number = {{24}},
pages = {{21986--21991}},
title = {{High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode}},
url = {{http://doi.org/10.1364/OE.17.021986}},
volume = {{17}},
year = {{2009}},
}
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