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Discussion on the figures of merit of identified traps located in the Si film : surface versus volume trap densities

(2020) ECS Transactions. 97(5). p.45-51
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Abstract
The aim of this work is a discussion on the figures of merit of identified traps located in the depletion zone (Si film) of advanced MOSFET devices. Two methodologies to estimate the volume trap densities are investigated, one using the relationship between the surface trap density and volume trap density and a second one based on the temperature evolution at fixed frequency of the generation-recombination plateau level associated to the same trap. By comparing the volume trap densities estimated using these two methods, the results are not agreeing with each other, suggesting that these methods can no longer be used with accuracy in multigate devices. Moreover, they may lead in certain cases to results physically not correct. Even about of the volume defects, the linear evolution between the plateau and the characteristic frequency of the generation-recombination contributions associated to the same trap give us the surface trap density without any additional assumption.

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MLA
Cretu, Bogdan, et al. “Discussion on the Figures of Merit of Identified Traps Located in the Si Film : Surface versus Volume Trap Densities.” ECS Transactions, vol. 97, no. 5, 2020, pp. 45–51, doi:10.1149/09705.0045ecst.
APA
Cretu, B., Nafaa, B., Simoen, E., Hellings, G., Linten, D., & Claeys, C. (2020). Discussion on the figures of merit of identified traps located in the Si film : surface versus volume trap densities. In ECS Transactions (Vol. 97, pp. 45–51). Montréal, Canada. https://doi.org/10.1149/09705.0045ecst
Chicago author-date
Cretu, Bogdan, Beya Nafaa, Eddy Simoen, Geert Hellings, Dimitri Linten, and Cor Claeys. 2020. “Discussion on the Figures of Merit of Identified Traps Located in the Si Film : Surface versus Volume Trap Densities.” In ECS Transactions, 97:45–51. https://doi.org/10.1149/09705.0045ecst.
Chicago author-date (all authors)
Cretu, Bogdan, Beya Nafaa, Eddy Simoen, Geert Hellings, Dimitri Linten, and Cor Claeys. 2020. “Discussion on the Figures of Merit of Identified Traps Located in the Si Film : Surface versus Volume Trap Densities.” In ECS Transactions, 97:45–51. doi:10.1149/09705.0045ecst.
Vancouver
1.
Cretu B, Nafaa B, Simoen E, Hellings G, Linten D, Claeys C. Discussion on the figures of merit of identified traps located in the Si film : surface versus volume trap densities. In: ECS Transactions. 2020. p. 45–51.
IEEE
[1]
B. Cretu, B. Nafaa, E. Simoen, G. Hellings, D. Linten, and C. Claeys, “Discussion on the figures of merit of identified traps located in the Si film : surface versus volume trap densities,” in ECS Transactions, Montréal, Canada, 2020, vol. 97, no. 5, pp. 45–51.
@inproceedings{8661748,
  abstract     = {The aim of this work is a discussion on the figures of merit of identified traps located in the depletion zone (Si film) of advanced MOSFET devices. Two methodologies to estimate the volume trap densities are investigated, one using the relationship between the surface trap density and volume trap density and a second one based on the temperature evolution at fixed frequency of the generation-recombination plateau level associated to the same trap. By comparing the volume trap densities estimated using these two methods, the results are not agreeing with each other, suggesting that these methods can no longer be used with accuracy in multigate devices. Moreover, they may lead in certain cases to results physically not correct. Even about of the volume defects, the linear evolution between the plateau and the characteristic frequency of the generation-recombination contributions associated to the same trap give us the surface trap density without any additional assumption.},
  author       = {Cretu, Bogdan and Nafaa, Beya and Simoen, Eddy and Hellings, Geert and Linten, Dimitri and Claeys, Cor},
  booktitle    = {ECS Transactions},
  issn         = {1938-5862},
  language     = {eng},
  location     = {Montréal, Canada},
  number       = {5},
  pages        = {45--51},
  title        = {Discussion on the figures of merit of identified traps located in the Si film : surface versus volume trap densities},
  url          = {http://dx.doi.org/10.1149/09705.0045ecst},
  volume       = {97},
  year         = {2020},
}

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