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Electrical activity of extended defects in relaxed InxGa1−xAs hetero-epitaxial layers

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GAAS SOLAR-CELLS, DEEP LEVELS, MISFIT DISLOCATIONS, ANTIPHASE DOMAINS, EFFICIENCY, REDUCTION, LIFETIMES, SILICON, STATES, GENERATION

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MLA
Claeys, C., et al. “Electrical Activity of Extended Defects in Relaxed InxGa1−xAs Hetero-Epitaxial Layers.” ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, vol. 9, no. 3, 2020, doi:10.1149/2162-8777/ab74c7.
APA
Claeys, C., Hsu, P.-C., Mols, Y., Han, H., Bender, H., Seidel, F., … Simoen, E. (2020). Electrical activity of extended defects in relaxed InxGa1−xAs hetero-epitaxial layers. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 9(3). https://doi.org/10.1149/2162-8777/ab74c7
Chicago author-date
Claeys, C., P.-C. Hsu, Y. Mols, H. Han, H. Bender, F. Seidel, P. Carolan, et al. 2020. “Electrical Activity of Extended Defects in Relaxed InxGa1−xAs Hetero-Epitaxial Layers.” ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 9 (3). https://doi.org/10.1149/2162-8777/ab74c7.
Chicago author-date (all authors)
Claeys, C., P.-C. Hsu, Y. Mols, H. Han, H. Bender, F. Seidel, P. Carolan, C. Merckling, A. Alian, N. Waldron, G. Eneman, N. Collaert, M. Heyns, and Eddy Simoen. 2020. “Electrical Activity of Extended Defects in Relaxed InxGa1−xAs Hetero-Epitaxial Layers.” ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY 9 (3). doi:10.1149/2162-8777/ab74c7.
Vancouver
1.
Claeys C, Hsu P-C, Mols Y, Han H, Bender H, Seidel F, et al. Electrical activity of extended defects in relaxed InxGa1−xAs hetero-epitaxial layers. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. 2020;9(3).
IEEE
[1]
C. Claeys et al., “Electrical activity of extended defects in relaxed InxGa1−xAs hetero-epitaxial layers,” ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, vol. 9, no. 3, 2020.
@article{8658984,
  articleno    = {033001},
  author       = {Claeys, C. and Hsu, P.-C. and Mols, Y. and Han, H. and Bender, H. and Seidel, F. and Carolan, P. and Merckling, C. and Alian, A. and Waldron, N. and Eneman, G. and Collaert, N. and Heyns, M. and Simoen, Eddy},
  issn         = {2162-8769},
  journal      = {ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY},
  keywords     = {GAAS SOLAR-CELLS,DEEP LEVELS,MISFIT DISLOCATIONS,ANTIPHASE DOMAINS,EFFICIENCY,REDUCTION,LIFETIMES,SILICON,STATES,GENERATION},
  language     = {eng},
  number       = {3},
  pages        = {8},
  title        = {Electrical activity of extended defects in relaxed InxGa1−xAs hetero-epitaxial layers},
  url          = {http://dx.doi.org/10.1149/2162-8777/ab74c7},
  volume       = {9},
  year         = {2020},
}

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