4-channel 200 Gb/s WDM O-band silicon photonic transceiver sub-assembly
- Author
- Miltiadis Moralis-Pegios, Stelios Pitris, Theoni Alexoudi, Nikos Terzenidis, Hannes Ramon, Joris Lambrecht (UGent) , Johan Bauwelinck (UGent) , Xin Yin (UGent) , Yoojin Ban, Peter De Heyn, Joris Van Campenhout, Tobias Lamprecht, Andreas Lehnman and Nikos Pleros
- Organization
- Abstract
- We demonstrate a 200G capable WDM O-band optical transceiver comprising a 4-element array of Silicon Photonics ring modulators (RM) and Ge photodiodes (PD) co-packaged with a SiGe BiCMOS integrated driver and a SiGe transimpedance amplifier (TIA) chip. A 4 x 50 Gb/s data modulation experiment revealed an average extinction ratio (ER) of 3.17 dB, with the transmitter exhibiting a total energy efficiency of 2 pJ/bit. Data reception has been experimentally validated at 50 Gb/s per lane, achieving an interpolated 10E-12 bit error rate (BER) for an input optical modulation amplitude (OMA) of -9.5 dBm and a power efficiency of 2.2 pJ/bit, yielding a total power efficiency of 4.2 pJ/bit for the transceiver, including heater tuning requirements. This electro-optic subassembly provides the highest aggregate data-rate among O-band RM-based silicon photonic transceiver implementations, highlighting its potential for next generation WDM Ethernet transceivers. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.
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Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-8657345
- MLA
- Moralis-Pegios, Miltiadis, et al. “4-Channel 200 Gb/s WDM O-Band Silicon Photonic Transceiver Sub-Assembly.” OPTICS EXPRESS, vol. 28, no. 4, 2020, pp. 5706–14, doi:10.1364/OE.373454.
- APA
- Moralis-Pegios, M., Pitris, S., Alexoudi, T., Terzenidis, N., Ramon, H., Lambrecht, J., … Pleros, N. (2020). 4-channel 200 Gb/s WDM O-band silicon photonic transceiver sub-assembly. OPTICS EXPRESS, 28(4), 5706–5714. https://doi.org/10.1364/OE.373454
- Chicago author-date
- Moralis-Pegios, Miltiadis, Stelios Pitris, Theoni Alexoudi, Nikos Terzenidis, Hannes Ramon, Joris Lambrecht, Johan Bauwelinck, et al. 2020. “4-Channel 200 Gb/s WDM O-Band Silicon Photonic Transceiver Sub-Assembly.” OPTICS EXPRESS 28 (4): 5706–14. https://doi.org/10.1364/OE.373454.
- Chicago author-date (all authors)
- Moralis-Pegios, Miltiadis, Stelios Pitris, Theoni Alexoudi, Nikos Terzenidis, Hannes Ramon, Joris Lambrecht, Johan Bauwelinck, Xin Yin, Yoojin Ban, Peter De Heyn, Joris Van Campenhout, Tobias Lamprecht, Andreas Lehnman, and Nikos Pleros. 2020. “4-Channel 200 Gb/s WDM O-Band Silicon Photonic Transceiver Sub-Assembly.” OPTICS EXPRESS 28 (4): 5706–5714. doi:10.1364/OE.373454.
- Vancouver
- 1.Moralis-Pegios M, Pitris S, Alexoudi T, Terzenidis N, Ramon H, Lambrecht J, et al. 4-channel 200 Gb/s WDM O-band silicon photonic transceiver sub-assembly. OPTICS EXPRESS. 2020;28(4):5706–14.
- IEEE
- [1]M. Moralis-Pegios et al., “4-channel 200 Gb/s WDM O-band silicon photonic transceiver sub-assembly,” OPTICS EXPRESS, vol. 28, no. 4, pp. 5706–5714, 2020.
@article{8657345,
abstract = {{We demonstrate a 200G capable WDM O-band optical transceiver comprising a 4-element array of Silicon Photonics ring modulators (RM) and Ge photodiodes (PD) co-packaged with a SiGe BiCMOS integrated driver and a SiGe transimpedance amplifier (TIA) chip. A 4 x 50 Gb/s data modulation experiment revealed an average extinction ratio (ER) of 3.17 dB, with the transmitter exhibiting a total energy efficiency of 2 pJ/bit. Data reception has been experimentally validated at 50 Gb/s per lane, achieving an interpolated 10E-12 bit error rate (BER) for an input optical modulation amplitude (OMA) of -9.5 dBm and a power efficiency of 2.2 pJ/bit, yielding a total power efficiency of 4.2 pJ/bit for the transceiver, including heater tuning requirements. This electro-optic subassembly provides the highest aggregate data-rate among O-band RM-based silicon photonic transceiver implementations, highlighting its potential for next generation WDM Ethernet transceivers. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.}},
author = {{Moralis-Pegios, Miltiadis and Pitris, Stelios and Alexoudi, Theoni and Terzenidis, Nikos and Ramon, Hannes and Lambrecht, Joris and Bauwelinck, Johan and Yin, Xin and Ban, Yoojin and De Heyn, Peter and Van Campenhout, Joris and Lamprecht, Tobias and Lehnman, Andreas and Pleros, Nikos}},
issn = {{1094-4087}},
journal = {{OPTICS EXPRESS}},
keywords = {{CHIP}},
language = {{eng}},
number = {{4}},
pages = {{5706--5714}},
title = {{4-channel 200 Gb/s WDM O-band silicon photonic transceiver sub-assembly}},
url = {{http://doi.org/10.1364/OE.373454}},
volume = {{28}},
year = {{2020}},
}
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