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Atmospheric pressure plasma deposition of organosilicon thin films by direct current and radio-frequency plasma jets

(2020) MATERIALS. 13(6).
Author
Organization
Abstract
Thin film deposition with atmospheric pressure plasmas is highly interesting for industrial demands and scientific interests in the field of biomaterials. However, the engineering of high-quality films by high-pressure plasmas with precise control over morphology and surface chemistry still poses a challenge. The two types of atmospheric-pressure plasma depositions of organosilicon films by the direct and indirect injection of hexamethyldisiloxane (HMDSO) precursor into a plasma region were chosen and compared in terms of the films chemical composition and morphology to address this. Although different methods of plasma excitation were used, the deposition of inorganic films with above 98% of SiO2 content was achieved for both cases. The chemical structure of the films was insignificantly dependent on the substrate type. The deposition in the afterglow of the DC discharge resulted in a soft film with high roughness, whereas RF plasma deposition led to a smoother film. In the case of the RF plasma deposition on polymeric materials resulted in films with delamination and cracks formation. Lastly, despite some material limitations, both deposition methods demonstrated significant potential for SiOx thin-films preparation for a variety of bio-related substrates, including glass, ceramics, metals, and polymers.
Keywords
General Materials Science, plasma deposition, atmospheric pressure plasma, thin film, organosilicon films, organosilicon precursors, CHEMICAL-VAPOR-DEPOSITION, SIO2-LIKE LAYERS, POLYMERIZATION, GROWTH

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MLA
Kuchakova, Iryna, et al. “Atmospheric Pressure Plasma Deposition of Organosilicon Thin Films by Direct Current and Radio-Frequency Plasma Jets.” MATERIALS, vol. 13, no. 6, 2020, doi:10.3390/ma13061296.
APA
Kuchakova, I., Ionita, M. D., Ionita, E.-R., Lazea-Stoyanova, A., Brajnicov, S., Mitu, B., … Nikiforov, A. (2020). Atmospheric pressure plasma deposition of organosilicon thin films by direct current and radio-frequency plasma jets. MATERIALS, 13(6). https://doi.org/10.3390/ma13061296
Chicago author-date
Kuchakova, Iryna, Maria Daniela Ionita, Eusebiu-Rosini Ionita, Andrada Lazea-Stoyanova, Simona Brajnicov, Bogdana Mitu, Gheorghe Dinescu, et al. 2020. “Atmospheric Pressure Plasma Deposition of Organosilicon Thin Films by Direct Current and Radio-Frequency Plasma Jets.” MATERIALS 13 (6). https://doi.org/10.3390/ma13061296.
Chicago author-date (all authors)
Kuchakova, Iryna, Maria Daniela Ionita, Eusebiu-Rosini Ionita, Andrada Lazea-Stoyanova, Simona Brajnicov, Bogdana Mitu, Gheorghe Dinescu, Mike De Vrieze, Uroš Cvelbar, Andrea Zille, Christophe Leys, and Anton Nikiforov. 2020. “Atmospheric Pressure Plasma Deposition of Organosilicon Thin Films by Direct Current and Radio-Frequency Plasma Jets.” MATERIALS 13 (6). doi:10.3390/ma13061296.
Vancouver
1.
Kuchakova I, Ionita MD, Ionita E-R, Lazea-Stoyanova A, Brajnicov S, Mitu B, et al. Atmospheric pressure plasma deposition of organosilicon thin films by direct current and radio-frequency plasma jets. MATERIALS. 2020;13(6).
IEEE
[1]
I. Kuchakova et al., “Atmospheric pressure plasma deposition of organosilicon thin films by direct current and radio-frequency plasma jets,” MATERIALS, vol. 13, no. 6, 2020.
@article{8654495,
  abstract     = {{Thin film deposition with atmospheric pressure plasmas is highly interesting for industrial demands and scientific interests in the field of biomaterials. However, the engineering of high-quality films by high-pressure plasmas with precise control over morphology and surface chemistry still poses a challenge. The two types of atmospheric-pressure plasma depositions of organosilicon films by the direct and indirect injection of hexamethyldisiloxane (HMDSO) precursor into a plasma region were chosen and compared in terms of the films chemical composition and morphology to address this. Although different methods of plasma excitation were used, the deposition of inorganic films with above 98% of SiO2 content was achieved for both cases. The chemical structure of the films was insignificantly dependent on the substrate type. The deposition in the afterglow of the DC discharge resulted in a soft film with high roughness, whereas RF plasma deposition led to a smoother film. In the case of the RF plasma deposition on polymeric materials resulted in films with delamination and cracks formation. Lastly, despite some material limitations, both deposition methods demonstrated significant potential for SiOx thin-films preparation for a variety of bio-related substrates, including glass, ceramics, metals, and polymers.}},
  articleno    = {{1296}},
  author       = {{Kuchakova, Iryna and Ionita, Maria Daniela and Ionita, Eusebiu-Rosini and Lazea-Stoyanova, Andrada and Brajnicov, Simona and Mitu, Bogdana and Dinescu, Gheorghe and De Vrieze, Mike and Cvelbar, Uroš and Zille, Andrea and Leys, Christophe and Nikiforov, Anton}},
  issn         = {{1996-1944}},
  journal      = {{MATERIALS}},
  keywords     = {{General Materials Science,plasma deposition,atmospheric pressure plasma,thin film,organosilicon films,organosilicon precursors,CHEMICAL-VAPOR-DEPOSITION,SIO2-LIKE LAYERS,POLYMERIZATION,GROWTH}},
  language     = {{eng}},
  number       = {{6}},
  pages        = {{16}},
  title        = {{Atmospheric pressure plasma deposition of organosilicon thin films by direct current and radio-frequency plasma jets}},
  url          = {{http://dx.doi.org/10.3390/ma13061296}},
  volume       = {{13}},
  year         = {{2020}},
}

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