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Abstract
In this paper, we present an in-depth study of the gate leakage mechanisms and correlated breakdown of GaN-based power HEMTs with p-GaN gate, controlled by a Schottky metal/ p-GaN junction. A detailed investigation of the process split and geometry dependency is done. From this study, we propose that a parasitic sidewall transistor is present, which is the cause for degradation in the p-GaN gate. The sidewall leakage has been substantiated by TCAD simulation and also by a novel method consisting of EBIC measurements directly applied on the cross section of a p-GaN gate. Based on this analysis we performed a process modification, which has led to a significant improvement in terms of gate reliability.
Keywords
HEMTS, DEGRADATION, p-GaN gate, sidewall, TDDB, gate leakage, lifetime, EBIC

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Citation

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MLA
Stoffels, S., et al. “Perimeter Driven Transport in the P-GaN Gate as a Limiting Factor for Gate Reliability.” 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), IEEE, 2019.
APA
Stoffels, S., Posthuma, N., Decoutere, S., Bakeroot, B., Tallarico, A. N., Sangiorgi, E., … Satka, A. (2019). Perimeter driven transport in the p-GaN gate as a limiting factor for gate reliability. In 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). New York: IEEE.
Chicago author-date
Stoffels, S., N. Posthuma, S. Decoutere, Benoit Bakeroot, A. N. Tallarico, Enrico Sangiorgi, Claudio Fiegna, et al. 2019. “Perimeter Driven Transport in the P-GaN Gate as a Limiting Factor for Gate Reliability.” In 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). New York: IEEE.
Chicago author-date (all authors)
Stoffels, S., N. Posthuma, S. Decoutere, Benoit Bakeroot, A. N. Tallarico, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, M. Borga, Elena Fabris, M. Meneghini, E. Zanoni, G. Meneghesso, J. Priesol, and A. Satka. 2019. “Perimeter Driven Transport in the P-GaN Gate as a Limiting Factor for Gate Reliability.” In 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). New York: IEEE.
Vancouver
1.
Stoffels S, Posthuma N, Decoutere S, Bakeroot B, Tallarico AN, Sangiorgi E, et al. Perimeter driven transport in the p-GaN gate as a limiting factor for gate reliability. In: 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS). New York: IEEE; 2019.
IEEE
[1]
S. Stoffels et al., “Perimeter driven transport in the p-GaN gate as a limiting factor for gate reliability,” in 2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), Monterey, CA, 2019.
@inproceedings{8653075,
  abstract     = {In this paper, we present an in-depth study of the gate leakage mechanisms and correlated breakdown of GaN-based power HEMTs with p-GaN gate, controlled by a Schottky metal/ p-GaN junction. A detailed investigation of the process split and geometry dependency is done. From this study, we propose that a parasitic sidewall transistor is present, which is the cause for degradation in the p-GaN gate. The sidewall leakage has been substantiated by TCAD simulation and also by a novel method consisting of EBIC measurements directly applied on the cross section of a p-GaN gate. Based on this analysis we performed a process modification, which has led to a significant improvement in terms of gate reliability.},
  author       = {Stoffels, S. and Posthuma, N. and Decoutere, S. and Bakeroot, Benoit and Tallarico, A. N. and Sangiorgi, Enrico and Fiegna, Claudio and Zheng, J. and Ma, X. and Borga, M. and Fabris, Elena and Meneghini, M. and Zanoni, E. and Meneghesso, G. and Priesol, J. and Satka, A.},
  booktitle    = {2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)},
  isbn         = {9781538695050},
  issn         = {1541-7026},
  keywords     = {HEMTS,DEGRADATION,p-GaN gate,sidewall,TDDB,gate leakage,lifetime,EBIC},
  language     = {eng},
  location     = {Monterey, CA},
  pages        = {10},
  publisher    = {IEEE},
  title        = {Perimeter driven transport in the p-GaN gate as a limiting factor for gate reliability},
  url          = {http://dx.doi.org/10.1109/IRPS.2019.8720411},
  year         = {2019},
}

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