Advanced search
1 file | 949.01 KB Add to list

Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications

Author
Organization
Abstract
We present a model for the vertical conduction through an AlN/p-Si junction, which is used as a base for the growth of GaN power devices. First, we recall that for resistive silicon substrates, the curves of the AlN/p-Si show a monotonic increase, interrupted by a plateau region. Then, to quantitatively explain this behavior, we propose a novel two-diode model. More specifically, we demonstrate that the AlN/p-Si structure can be split into the series connection of two substructures: 1) an equivalent AlN/n-Si junction and 2) an equivalent n-Si/p-Si diode. The n(;) layer models the electron inversion layer in the silicon at the interface with the AlN layer. Technology Computer-Aided Design (TCAD) simulations were used to validate these two diode models. By comparing the leakage current of the AlN/p-Si structure with the current through the diodes, we demonstrate that within the plateau region, all the applied voltage drops on the equivalent n-Si/p-Si junction, and the current through the diodes is limited by the reverse leakage current of the n-Si/p-Si diode. The plateau ends as soon as impact ionization occurs in the Si substrate, due to the high electric field in the depletion region. After the plateau, the current through the diodes is again limited by charge injection from the inversion layer into the AlN, which occurs through a phonon-assisted tunneling mechanism (possibly trap-assisted).
Keywords
SUBSTRATE, SI(111), AlN, GaN-on-silicon, substrate depletion, vertical leakage

Downloads

  • (...).pdf
    • full text (Published version)
    • |
    • UGent only
    • |
    • PDF
    • |
    • 949.01 KB

Citation

Please use this url to cite or link to this publication:

MLA
Borga, Matteo, et al. “Modeling of the Vertical Leakage Current in AlN/Si Heterojunctions for GaN Power Applications.” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 67, no. 2, 2020, pp. 595–99, doi:10.1109/TED.2020.2964060.
APA
Borga, M., De Santi, C., Stoffels, S., Bakeroot, B., Li, X., Zhao, M., … Zanoni, E. (2020). Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications. IEEE TRANSACTIONS ON ELECTRON DEVICES, 67(2), 595–599. https://doi.org/10.1109/TED.2020.2964060
Chicago author-date
Borga, Matteo, Carlo De Santi, S. Stoffels, Benoit Bakeroot, Xiangdong Li, M. Zhao, M. Van Hove, et al. 2020. “Modeling of the Vertical Leakage Current in AlN/Si Heterojunctions for GaN Power Applications.” IEEE TRANSACTIONS ON ELECTRON DEVICES 67 (2): 595–99. https://doi.org/10.1109/TED.2020.2964060.
Chicago author-date (all authors)
Borga, Matteo, Carlo De Santi, S. Stoffels, Benoit Bakeroot, Xiangdong Li, M. Zhao, M. Van Hove, S. Decoutere, Gaudenzio Meneghesso, Matteo Meneghini, and Enrico Zanoni. 2020. “Modeling of the Vertical Leakage Current in AlN/Si Heterojunctions for GaN Power Applications.” IEEE TRANSACTIONS ON ELECTRON DEVICES 67 (2): 595–599. doi:10.1109/TED.2020.2964060.
Vancouver
1.
Borga M, De Santi C, Stoffels S, Bakeroot B, Li X, Zhao M, et al. Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2020;67(2):595–9.
IEEE
[1]
M. Borga et al., “Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications,” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 67, no. 2, pp. 595–599, 2020.
@article{8653065,
  abstract     = {{We present a model for the vertical conduction through an AlN/p-Si junction, which is used as a base for the growth of GaN power devices. First, we recall that for resistive silicon substrates, the curves of the AlN/p-Si show a monotonic increase, interrupted by a plateau region. Then, to quantitatively explain this behavior, we propose a novel two-diode model. More specifically, we demonstrate that the AlN/p-Si structure can be split into the series connection of two substructures: 1) an equivalent AlN/n-Si junction and 2) an equivalent n-Si/p-Si diode. The n(;) layer models the electron inversion layer in the silicon at the interface with the AlN layer. Technology Computer-Aided Design (TCAD) simulations were used to validate these two diode models. By comparing the leakage current of the AlN/p-Si structure with the current through the diodes, we demonstrate that within the plateau region, all the applied voltage drops on the equivalent n-Si/p-Si junction, and the current through the diodes is limited by the reverse leakage current of the n-Si/p-Si diode. The plateau ends as soon as impact ionization occurs in the Si substrate, due to the high electric field in the depletion region. After the plateau, the current through the diodes is again limited by charge injection from the inversion layer into the AlN, which occurs through a phonon-assisted tunneling mechanism (possibly trap-assisted).}},
  author       = {{Borga, Matteo and De Santi, Carlo and Stoffels, S. and Bakeroot, Benoit and Li, Xiangdong and Zhao, M. and Van Hove, M. and Decoutere, S. and Meneghesso, Gaudenzio and Meneghini, Matteo and Zanoni, Enrico}},
  issn         = {{0018-9383}},
  journal      = {{IEEE TRANSACTIONS ON ELECTRON DEVICES}},
  keywords     = {{SUBSTRATE,SI(111),AlN,GaN-on-silicon,substrate depletion,vertical leakage}},
  language     = {{eng}},
  number       = {{2}},
  pages        = {{595--599}},
  title        = {{Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications}},
  url          = {{http://doi.org/10.1109/TED.2020.2964060}},
  volume       = {{67}},
  year         = {{2020}},
}

Altmetric
View in Altmetric
Web of Science
Times cited: