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Gate reliability of p-GaN HEMT with gate metal retraction

A. N. Tallarico, S. Stoffels, N. Posthuma, Benoit Bakeroot (UGent) , S. Decoutere, E. Sangiorgi and C. Fiegna
(2019) IEEE TRANSACTIONS ON ELECTRON DEVICES. 66(11). p.4829-4835
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Abstract
In this article, we present an analysis of the gate degradation induced by long-term forward gate stress in GaN-based power HEMTs with p-type gate, controlled by a Schottky metal-retracted/p-GaN junction. In particular, time-dependent gate breakdown and threshold voltage instability are investigated as function of different geometries, gate biases, and temperatures. The introduction of a gate metal retraction (GMR) process step improves the device lifetime because it suppresses the onset of the leakage current flow occurring at the gate edges for relatively high gate voltage. However, biasing GMR p-GaN HEMT at V-G > 8 V and T > 80 degrees C, a new degradation mechanism shows up, possibly altering the lifetime even at low V-G operation. Main results in this article demonstrate that although at high V-G and high T, a localized degradation effect ascribed to the device isolation region is responsible for time-dependent gate breakdown, thanks to GMR higher operating voltages compatible with ten-year continuous operation is attained. Finally, the longer device lifetime at moderate V-G values brought by GMR allows evaluating the threshold voltage instability for long stress times (approximate to 112 h) at relatively high V-G and high T, leading to the observation of a saturation of the long-term positive threshold voltage shift and providing additional information about the underlying physical degradation mechanisms. Overall, the saturated 0.65-V Delta V-TH under worst-case condition (V-G = 7 V at 150 degrees C, i.e., corresponding to ten-year lifetime) reveals a reliable and fairly stable technology with respect to forward gate stress.
Keywords
DEGRADATION, Logic gates, Electric breakdown, Metals, Stress, HEMTs, Reliability, Degradation, Forward gate stress, gate metal retraction (GMR), impact, ionization, isolations, p-GaN HEMT, reliability, threshold voltage, instability, time-dependent gate breakdown, trapping mechanisms

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MLA
Tallarico, A. N., et al. “Gate Reliability of P-GaN HEMT with Gate Metal Retraction.” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 66, no. 11, 2019, pp. 4829–35, doi:10.1109/TED.2019.2938598.
APA
Tallarico, A. N., Stoffels, S., Posthuma, N., Bakeroot, B., Decoutere, S., Sangiorgi, E., & Fiegna, C. (2019). Gate reliability of p-GaN HEMT with gate metal retraction. IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(11), 4829–4835. https://doi.org/10.1109/TED.2019.2938598
Chicago author-date
Tallarico, A. N., S. Stoffels, N. Posthuma, Benoit Bakeroot, S. Decoutere, E. Sangiorgi, and C. Fiegna. 2019. “Gate Reliability of P-GaN HEMT with Gate Metal Retraction.” IEEE TRANSACTIONS ON ELECTRON DEVICES 66 (11): 4829–35. https://doi.org/10.1109/TED.2019.2938598.
Chicago author-date (all authors)
Tallarico, A. N., S. Stoffels, N. Posthuma, Benoit Bakeroot, S. Decoutere, E. Sangiorgi, and C. Fiegna. 2019. “Gate Reliability of P-GaN HEMT with Gate Metal Retraction.” IEEE TRANSACTIONS ON ELECTRON DEVICES 66 (11): 4829–4835. doi:10.1109/TED.2019.2938598.
Vancouver
1.
Tallarico AN, Stoffels S, Posthuma N, Bakeroot B, Decoutere S, Sangiorgi E, et al. Gate reliability of p-GaN HEMT with gate metal retraction. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2019;66(11):4829–35.
IEEE
[1]
A. N. Tallarico et al., “Gate reliability of p-GaN HEMT with gate metal retraction,” IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 66, no. 11, pp. 4829–4835, 2019.
@article{8653063,
  abstract     = {{In this article, we present an analysis of the gate degradation induced by long-term forward gate stress in GaN-based power HEMTs with p-type gate, controlled by a Schottky metal-retracted/p-GaN junction. In particular, time-dependent gate breakdown and threshold voltage instability are investigated as function of different geometries, gate biases, and temperatures. The introduction of a gate metal retraction (GMR) process step improves the device lifetime because it suppresses the onset of the leakage current flow occurring at the gate edges for relatively high gate voltage. However, biasing GMR p-GaN HEMT at V-G > 8 V and T > 80 degrees C, a new degradation mechanism shows up, possibly altering the lifetime even at low V-G operation. Main results in this article demonstrate that although at high V-G and high T, a localized degradation effect ascribed to the device isolation region is responsible for time-dependent gate breakdown, thanks to GMR higher operating voltages compatible with ten-year continuous operation is attained. Finally, the longer device lifetime at moderate V-G values brought by GMR allows evaluating the threshold voltage instability for long stress times (approximate to 112 h) at relatively high V-G and high T, leading to the observation of a saturation of the long-term positive threshold voltage shift and providing additional information about the underlying physical degradation mechanisms. Overall, the saturated 0.65-V Delta V-TH under worst-case condition (V-G = 7 V at 150 degrees C, i.e., corresponding to ten-year lifetime) reveals a reliable and fairly stable technology with respect to forward gate stress.}},
  author       = {{Tallarico, A. N. and Stoffels, S. and Posthuma, N. and Bakeroot, Benoit and Decoutere, S. and Sangiorgi, E. and Fiegna, C.}},
  issn         = {{0018-9383}},
  journal      = {{IEEE TRANSACTIONS ON ELECTRON DEVICES}},
  keywords     = {{DEGRADATION,Logic gates,Electric breakdown,Metals,Stress,HEMTs,Reliability,Degradation,Forward gate stress,gate metal retraction (GMR),impact,ionization,isolations,p-GaN HEMT,reliability,threshold voltage,instability,time-dependent gate breakdown,trapping mechanisms}},
  language     = {{eng}},
  number       = {{11}},
  pages        = {{4829--4835}},
  title        = {{Gate reliability of p-GaN HEMT with gate metal retraction}},
  url          = {{http://doi.org/10.1109/TED.2019.2938598}},
  volume       = {{66}},
  year         = {{2019}},
}
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