Differential variable base charge pumping (Delta-CP) for SiO2/SiC interface characterization
- Author
- P. Moens, A. Constant, Arno Stockman, J. Franchi and F. Allerstam
- Organization
- Abstract
- We propose an electrical evaluation technique named differential charge pumping (Δ-CP) to extract information on the interface states (D it ) at the SiC/SiO 2 interface. This technique allows to obtain information on (1) the physical location of the D it ; (2) the energetic spread of the D it in the bandgap; (3) if the D it are donor or acceptor type. First results indicate contributions from both the “S/D” region and the channel regions to the overall CP signal. Surprisingly a substantial contribution of the “S/D” regions of the transistors to the overall CP signal is observed. In the channel region, both donors and acceptor type states are identified, the majority being acceptor type.
- Keywords
- SiC, interface states, charge pumping, donor, acceptor states
Downloads
-
(...).pdf
- full text (Published version)
- |
- UGent only
- |
- |
- 1.05 MB
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-8652943
- MLA
- Moens, P., et al. “Differential Variable Base Charge Pumping (Delta-CP) for SiO2/SiC Interface Characterization.” 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), IEEE, 2019, pp. 163–66, doi:10.1109/ispsd.2019.8757560.
- APA
- Moens, P., Constant, A., Stockman, A., Franchi, J., & Allerstam, F. (2019). Differential variable base charge pumping (Delta-CP) for SiO2/SiC interface characterization. 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 163–166. https://doi.org/10.1109/ispsd.2019.8757560
- Chicago author-date
- Moens, P., A. Constant, Arno Stockman, J. Franchi, and F. Allerstam. 2019. “Differential Variable Base Charge Pumping (Delta-CP) for SiO2/SiC Interface Characterization.” In 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 163–66. New York: IEEE. https://doi.org/10.1109/ispsd.2019.8757560.
- Chicago author-date (all authors)
- Moens, P., A. Constant, Arno Stockman, J. Franchi, and F. Allerstam. 2019. “Differential Variable Base Charge Pumping (Delta-CP) for SiO2/SiC Interface Characterization.” In 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 163–166. New York: IEEE. doi:10.1109/ispsd.2019.8757560.
- Vancouver
- 1.Moens P, Constant A, Stockman A, Franchi J, Allerstam F. Differential variable base charge pumping (Delta-CP) for SiO2/SiC interface characterization. In: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD). New York: IEEE; 2019. p. 163–6.
- IEEE
- [1]P. Moens, A. Constant, A. Stockman, J. Franchi, and F. Allerstam, “Differential variable base charge pumping (Delta-CP) for SiO2/SiC interface characterization,” in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 163–166.
@inproceedings{8652943,
abstract = {{We propose an electrical evaluation technique named differential charge pumping (Δ-CP) to extract information on the interface states (D it ) at the SiC/SiO 2 interface. This technique allows to obtain information on (1) the physical location of the D it ; (2) the energetic spread of the D it in the bandgap; (3) if the D it are donor or acceptor type. First results indicate contributions from both the “S/D” region and the channel regions to the overall CP signal. Surprisingly a substantial contribution of the “S/D” regions of the transistors to the overall CP signal is observed. In the channel region, both donors and acceptor type states are identified, the majority being acceptor type.}},
author = {{Moens, P. and Constant, A. and Stockman, Arno and Franchi, J. and Allerstam, F.}},
booktitle = {{2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)}},
isbn = {{9781728105802}},
issn = {{1063-6854}},
keywords = {{SiC,interface states,charge pumping,donor,acceptor states}},
language = {{eng}},
location = {{Shanghai, China}},
pages = {{163--166}},
publisher = {{IEEE}},
title = {{Differential variable base charge pumping (Delta-CP) for SiO2/SiC interface characterization}},
url = {{http://doi.org/10.1109/ispsd.2019.8757560}},
year = {{2019}},
}
- Altmetric
- View in Altmetric
- Web of Science
- Times cited: