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Abstract
We present the design, fabrication and characterization of an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. Measured detector responsivity and 3 dB bandwidth are 0.45 A/W and 33 GHz, respectively. The photonic device fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.
Keywords
III-V semiconductors, gallium arsenide, indium compounds, integrated optics, integrated optoelectronics, membranes, optical design techniques, optical fabrication, optical interconnections, optical waveguides, photodetectors, SOI circuitry, InP-based membrane photodetector, photodetector fabrication, photodetector design, photodetector characterization, Si-wiring photonic circuit, detector responsivity, photonic device fabrication, wafer scale processing, electronic IC processing, optical interconnect layer, silicon waveguides, bandwidth 33 GHz, InP-InGaAs, Si

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Citation

Please use this url to cite or link to this publication:

Chicago
Binetti, PRA, XJM Leijtens, Tjibbe de Vries, YS Oei, L Di Cioccio, J-M Fedeli, C Lagahe, et al. 2009. “InP/InGaAs Photodetector on SOI Circuitry.” In Proceedings of the 2009 6th IEEE International Conference on Group IV Photonics, 214–216. Piscataway, NJ, USA: IEEE.
APA
Binetti, P., Leijtens, X., de Vries, T., Oei, Y., Di Cioccio, L., Fedeli, J.-M., Lagahe, C., et al. (2009). InP/InGaAs photodetector on SOI circuitry. Proceedings of the 2009 6th IEEE International Conference on Group IV Photonics (pp. 214–216). Presented at the 6th IEEE International Conference on Group IV Photonics (GFP 2009), Piscataway, NJ, USA: IEEE.
Vancouver
1.
Binetti P, Leijtens X, de Vries T, Oei Y, Di Cioccio L, Fedeli J-M, et al. InP/InGaAs photodetector on SOI circuitry. Proceedings of the 2009 6th IEEE International Conference on Group IV Photonics. Piscataway, NJ, USA: IEEE; 2009. p. 214–6.
MLA
Binetti, PRA, XJM Leijtens, Tjibbe de Vries, et al. “InP/InGaAs Photodetector on SOI Circuitry.” Proceedings of the 2009 6th IEEE International Conference on Group IV Photonics. Piscataway, NJ, USA: IEEE, 2009. 214–216. Print.
@inproceedings{865279,
  abstract     = {We present the design, fabrication and characterization of an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. Measured detector responsivity and 3 dB bandwidth are 0.45 A/W and 33 GHz, respectively. The photonic device fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.},
  author       = {Binetti, PRA and Leijtens, XJM and de Vries, Tjibbe and Oei, YS and Di Cioccio, L and Fedeli, J-M and Lagahe, C and Van Campenhout, Jan and Van Thourhout, Dries and van Veldhoven, PJ and Notzel, R and Smit, MK},
  booktitle    = {Proceedings of the 2009 6th IEEE International Conference on Group IV Photonics},
  isbn         = {9781424444021},
  language     = {eng},
  location     = {San Francisco, CA, USA},
  pages        = {214--216},
  publisher    = {IEEE},
  title        = {InP/InGaAs photodetector on SOI circuitry},
  url          = {http://dx.doi.org/10.1109/GROUP4.2009.5338390},
  year         = {2009},
}

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