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A 160Gb/s (4x40) WDM O-band Tx subassembly using a 4-ch array of silicon rings co-packaged with a SiGe BiCMOS IC driver

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Abstract
We present a 400 (8×50) Gb/s-capable RM-based Si-photonic WDM O-band TxRx with 1.17nm channel spacing for high-speed optical interconnects and demonstrate successful 50Gb/s-NRZ TxRx operation achieving a ~4.5dB Tx extinction ratio under 2.15Vpp drive.

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Citation

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MLA
Moralis-Pegios, M., et al. “A 160Gb/s (4x40) WDM O-Band Tx Subassembly Using a 4-Ch Array of Silicon Rings Co-Packaged with a SiGe BiCMOS IC Driver.” ECOC 2019, 45th European Conference on Optical Communications, Proceedings, 2019, doi:10.1364/OFC.2020.M4H.3.
APA
Moralis-Pegios, M., Pitris, S., Alexoudi, T., Terzenidis, N., Ramon, H., Lambrecht, J., … Pleros, N. (2019). A 160Gb/s (4x40) WDM O-band Tx subassembly using a 4-ch array of silicon rings co-packaged with a SiGe BiCMOS IC driver. In ECOC 2019, 45th European Conference on Optical Communications, Proceedings. Dublin, Ireland. https://doi.org/10.1364/OFC.2020.M4H.3
Chicago author-date
Moralis-Pegios, M., S. Pitris, T. Alexoudi, N. Terzenidis, Hannes Ramon, Joris Lambrecht, Johan Bauwelinck, et al. 2019. “A 160Gb/s (4x40) WDM O-Band Tx Subassembly Using a 4-Ch Array of Silicon Rings Co-Packaged with a SiGe BiCMOS IC Driver.” In ECOC 2019, 45th European Conference on Optical Communications, Proceedings. https://doi.org/10.1364/OFC.2020.M4H.3.
Chicago author-date (all authors)
Moralis-Pegios, M., S. Pitris, T. Alexoudi, N. Terzenidis, Hannes Ramon, Joris Lambrecht, Johan Bauwelinck, Xin Yin, Y. Ban, Peter De Heyn, Joris Van Campenhout, T. Lamprecht, A. Lehnman, and N. Pleros. 2019. “A 160Gb/s (4x40) WDM O-Band Tx Subassembly Using a 4-Ch Array of Silicon Rings Co-Packaged with a SiGe BiCMOS IC Driver.” In ECOC 2019, 45th European Conference on Optical Communications, Proceedings. doi:10.1364/OFC.2020.M4H.3.
Vancouver
1.
Moralis-Pegios M, Pitris S, Alexoudi T, Terzenidis N, Ramon H, Lambrecht J, et al. A 160Gb/s (4x40) WDM O-band Tx subassembly using a 4-ch array of silicon rings co-packaged with a SiGe BiCMOS IC driver. In: ECOC 2019, 45th European Conference on Optical Communications, Proceedings. 2019.
IEEE
[1]
M. Moralis-Pegios et al., “A 160Gb/s (4x40) WDM O-band Tx subassembly using a 4-ch array of silicon rings co-packaged with a SiGe BiCMOS IC driver,” in ECOC 2019, 45th European Conference on Optical Communications, Proceedings, Dublin, Ireland, 2019.
@inproceedings{8647248,
  abstract     = {{We present a 400 (8×50) Gb/s-capable RM-based Si-photonic WDM O-band TxRx with 1.17nm channel spacing for high-speed optical interconnects and demonstrate successful 50Gb/s-NRZ TxRx operation achieving a ~4.5dB Tx extinction ratio under 2.15Vpp drive.}},
  articleno    = {{M4H.3}},
  author       = {{Moralis-Pegios, M. and Pitris, S. and Alexoudi, T. and Terzenidis, N. and Ramon, Hannes and Lambrecht, Joris and Bauwelinck, Johan and Yin, Xin and Ban, Y. and De Heyn, Peter and Van Campenhout, Joris and Lamprecht, T. and Lehnman, A. and Pleros, N.}},
  booktitle    = {{ECOC 2019, 45th European Conference on Optical Communications, Proceedings}},
  isbn         = {{9781943580712}},
  language     = {{eng}},
  location     = {{Dublin, Ireland}},
  pages        = {{4}},
  title        = {{A 160Gb/s (4x40) WDM O-band Tx subassembly using a 4-ch array of silicon rings co-packaged with a SiGe BiCMOS IC driver}},
  url          = {{http://dx.doi.org/10.1364/OFC.2020.M4H.3}},
  year         = {{2019}},
}

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