Use of neutron absorbers to influence the neutron transmutation doping process in silicon
- Author
- Jonas Vande Pitte (UGent) , J. Wagemans, A. Gusarov, I. Uytdenhouwen, Christophe Detavernier (UGent) and Johan Lauwaert (UGent)
- Organization
- Abstract
- Neutron transmutation doping is used to create high-quality silicon with a specific target resistivity. By implementing neutron absorbers, it is possible to obtain a broader range of postirradiation resistivities. To develop this method, the influence of neutron absorbers on the reactor spectrum in Belgian Reactor 1 was numerically simulated and experimentally verified. A comparison between the modeled reactor spectrum and the spectrum obtained through activation foils showed good agreement. These data were used to calculate the resistivity of silicon under cadmium and hafnium foils with different thicknesses after neutron irradiation. Experimental four-point probe measurements confirmed the calculated resistivities. Hence, the research shows that tailoring the reactor spectrum using neutron absorbers allows for a large range of final resistivities or doping concentrations in silicon during a single irradiation cycle.
- Keywords
- Nuclear and High Energy Physics, Nuclear Energy and Engineering, Condensed Matter Physics, Neutron absorption, neutron transmutation doping, silicon, resistivity, cadmium, hafnium
Downloads
-
(...).pdf
- full text (Published version)
- |
- UGent only
- |
- |
- 1.88 MB
Citation
Please use this url to cite or link to this publication: http://hdl.handle.net/1854/LU-8645345
- MLA
- Vande Pitte, Jonas, et al. “Use of Neutron Absorbers to Influence the Neutron Transmutation Doping Process in Silicon.” NUCLEAR TECHNOLOGY, vol. 206, no. 5, 2020, pp. 758–65, doi:10.1080/00295450.2019.1697172.
- APA
- Vande Pitte, J., Wagemans, J., Gusarov, A., Uytdenhouwen, I., Detavernier, C., & Lauwaert, J. (2020). Use of neutron absorbers to influence the neutron transmutation doping process in silicon. NUCLEAR TECHNOLOGY, 206(5), 758–765. https://doi.org/10.1080/00295450.2019.1697172
- Chicago author-date
- Vande Pitte, Jonas, J. Wagemans, A. Gusarov, I. Uytdenhouwen, Christophe Detavernier, and Johan Lauwaert. 2020. “Use of Neutron Absorbers to Influence the Neutron Transmutation Doping Process in Silicon.” NUCLEAR TECHNOLOGY 206 (5): 758–65. https://doi.org/10.1080/00295450.2019.1697172.
- Chicago author-date (all authors)
- Vande Pitte, Jonas, J. Wagemans, A. Gusarov, I. Uytdenhouwen, Christophe Detavernier, and Johan Lauwaert. 2020. “Use of Neutron Absorbers to Influence the Neutron Transmutation Doping Process in Silicon.” NUCLEAR TECHNOLOGY 206 (5): 758–765. doi:10.1080/00295450.2019.1697172.
- Vancouver
- 1.Vande Pitte J, Wagemans J, Gusarov A, Uytdenhouwen I, Detavernier C, Lauwaert J. Use of neutron absorbers to influence the neutron transmutation doping process in silicon. NUCLEAR TECHNOLOGY. 2020;206(5):758–65.
- IEEE
- [1]J. Vande Pitte, J. Wagemans, A. Gusarov, I. Uytdenhouwen, C. Detavernier, and J. Lauwaert, “Use of neutron absorbers to influence the neutron transmutation doping process in silicon,” NUCLEAR TECHNOLOGY, vol. 206, no. 5, pp. 758–765, 2020.
@article{8645345,
abstract = {Neutron transmutation doping is used to create high-quality silicon with a specific target resistivity. By implementing neutron absorbers, it is possible to obtain a broader range of postirradiation resistivities. To develop this method, the influence of neutron absorbers on the reactor spectrum in Belgian Reactor 1 was numerically simulated and experimentally verified. A comparison between the modeled reactor spectrum and the spectrum obtained through activation foils showed good agreement. These data were used to calculate the resistivity of silicon under cadmium and hafnium foils with different thicknesses after neutron irradiation. Experimental four-point probe measurements confirmed the calculated resistivities. Hence, the research shows that tailoring the reactor spectrum using neutron absorbers allows for a large range of final resistivities or doping concentrations in silicon during a single irradiation cycle.},
author = {Vande Pitte, Jonas and Wagemans, J. and Gusarov, A. and Uytdenhouwen, I. and Detavernier, Christophe and Lauwaert, Johan},
issn = {0029-5450},
journal = {NUCLEAR TECHNOLOGY},
keywords = {Nuclear and High Energy Physics,Nuclear Energy and Engineering,Condensed Matter Physics,Neutron absorption,neutron transmutation doping,silicon,resistivity,cadmium,hafnium},
language = {eng},
number = {5},
pages = {758--765},
title = {Use of neutron absorbers to influence the neutron transmutation doping process in silicon},
url = {http://dx.doi.org/10.1080/00295450.2019.1697172},
volume = {206},
year = {2020},
}
- Altmetric
- View in Altmetric
- Web of Science
- Times cited: