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Interfacial oxidation and photoluminescence of InP-based core/shell quantum dots

(2018) CHEMISTRY OF MATERIALS. 30(19). p.6877-6883
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Abstract
Indium phosphide colloidal quantum dots (QDs) are emerging as an efficient cadmium-free alternative for optoelectronic applications. Recently, syntheses based on easy-to-implement aminophosphine precursors have been developed. We show by solid-state nuclear magnetic resonance spectroscopy that this new approach allows oxide-free indium phosphide core or core/shell quantum dots to be made. Importantly, the oxide-free core/shell interface does not help in achieving higher luminescence efficiencies. We demonstrate that in the case of InP/ZnS and InP/ZnSe QDs, a more pronounced oxidation concurs with a higher photoluminescence efficiency. This study suggests that a II-VI shell on a III-V core generates an interface prone to defects. The most efficient InP/ZnS or InP/ZnSe QDs are therefore made with an oxide buffer layer between the core and the shell: it passivates these interface defects but also results in a somewhat broader emission line width.
Keywords
COLLOIDAL NANOCRYSTALS, HIGHLY LUMINESCENT, INP/ZNS NANOCRYSTALS, SURFACE, NMR, CHEMISTRY, HETEROSTRUCTURES, TRAPS

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MLA
Tessier, Mickaël, et al. “Interfacial Oxidation and Photoluminescence of InP-Based Core/Shell Quantum Dots.” CHEMISTRY OF MATERIALS, vol. 30, no. 19, 2018, pp. 6877–83, doi:10.1021/acs.chemmater.8b03117.
APA
Tessier, M., Baquero, E. A., Dupont, D., Grigel, V., Bladt, E., Bals, S., … Delpech, F. (2018). Interfacial oxidation and photoluminescence of InP-based core/shell quantum dots. CHEMISTRY OF MATERIALS, 30(19), 6877–6883. https://doi.org/10.1021/acs.chemmater.8b03117
Chicago author-date
Tessier, Mickaël, Edwin A Baquero, Dorian Dupont, Valeriia Grigel, Eva Bladt, Sara Bals, Yannick Coppel, Zeger Hens, Céline Nayral, and Fabien Delpech. 2018. “Interfacial Oxidation and Photoluminescence of InP-Based Core/Shell Quantum Dots.” CHEMISTRY OF MATERIALS 30 (19): 6877–83. https://doi.org/10.1021/acs.chemmater.8b03117.
Chicago author-date (all authors)
Tessier, Mickaël, Edwin A Baquero, Dorian Dupont, Valeriia Grigel, Eva Bladt, Sara Bals, Yannick Coppel, Zeger Hens, Céline Nayral, and Fabien Delpech. 2018. “Interfacial Oxidation and Photoluminescence of InP-Based Core/Shell Quantum Dots.” CHEMISTRY OF MATERIALS 30 (19): 6877–6883. doi:10.1021/acs.chemmater.8b03117.
Vancouver
1.
Tessier M, Baquero EA, Dupont D, Grigel V, Bladt E, Bals S, et al. Interfacial oxidation and photoluminescence of InP-based core/shell quantum dots. CHEMISTRY OF MATERIALS. 2018;30(19):6877–83.
IEEE
[1]
M. Tessier et al., “Interfacial oxidation and photoluminescence of InP-based core/shell quantum dots,” CHEMISTRY OF MATERIALS, vol. 30, no. 19, pp. 6877–6883, 2018.
@article{8637754,
  abstract     = {{Indium phosphide colloidal quantum dots (QDs) are emerging as an efficient cadmium-free alternative for optoelectronic applications. Recently, syntheses based on easy-to-implement aminophosphine precursors have been developed. We show by solid-state nuclear magnetic resonance spectroscopy that this new approach allows oxide-free indium phosphide core or core/shell quantum dots to be made. Importantly, the oxide-free core/shell interface does not help in achieving higher luminescence efficiencies. We demonstrate that in the case of InP/ZnS and InP/ZnSe QDs, a more pronounced oxidation concurs with a higher photoluminescence efficiency. This study suggests that a II-VI shell on a III-V core generates an interface prone to defects. The most efficient InP/ZnS or InP/ZnSe QDs are therefore made with an oxide buffer layer between the core and the shell: it passivates these interface defects but also results in a somewhat broader emission line width.}},
  author       = {{Tessier, Mickaël and Baquero, Edwin A and Dupont, Dorian and Grigel, Valeriia and Bladt, Eva and Bals, Sara and Coppel, Yannick and Hens, Zeger and Nayral, Céline and Delpech, Fabien}},
  issn         = {{0897-4756}},
  journal      = {{CHEMISTRY OF MATERIALS}},
  keywords     = {{COLLOIDAL NANOCRYSTALS,HIGHLY LUMINESCENT,INP/ZNS NANOCRYSTALS,SURFACE,NMR,CHEMISTRY,HETEROSTRUCTURES,TRAPS}},
  language     = {{eng}},
  number       = {{19}},
  pages        = {{6877--6883}},
  title        = {{Interfacial oxidation and photoluminescence of InP-based core/shell quantum dots}},
  url          = {{http://dx.doi.org/10.1021/acs.chemmater.8b03117}},
  volume       = {{30}},
  year         = {{2018}},
}

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