@article{8637737,
  abstract     = {{Colloidal quantum dots (QDs) are a promising material for optoelectronic applications. Typically, device integration requires QDs to be embedded in a host material. Atomic layer deposition (ALD) is often considered as a deposition technique for such purposes. However, it is known that ALD and vacuum processes often influence the optical properties of QDs in a negative way. Here, we describe an in situ photoluminescence (PL) measurement setup and use it to monitor the PL of QDs under vacuum and during ALD. For CdSe-based core/shell QDs, a reduction in the QD PL was observed upon exposure to vacuum. Water was identified as crucial for maintaining a high PL as evidenced by re-exposure to different gases. Furthermore, we addressed the influence of vacuum, different plasmas (02, H2O, H2, H2S/Ar, and Ar), precursors (trimethylaluminum, diethylzinc, tetrakis(dimethylamido)titanium, and tetrakis(ethylmethylamido)hafnium), reactants (H20, H2S, and 03), and ALD processes (A1203, Ti02, Hf02, and ZnS) on QDs. We observed a PL reduction by up to 90% upon plasma treatments. Furthermore, we found that trimethylaluminum and diethylzinc reduced the PL efficiency by more than 70% while exposure to tetrakis(dimethylamido)titanium and tetrakis(ethylmethylamido)hafnium lowered the PL by only 10-20%. Surprisingly, tetrakis(dimethylamido)titanium and H2O, which by themselves had only a minor influence on the QD PL, still caused an 80% drop of the PL efficiency when combined as an ALD process. On the other hand, ALD growth of Hf02 by combining tetrakis(ethylmethylamido)hafnium and 03 preserved 80% of the initial PL quantum yield, making it a promising process for QD embedding. These results put forward in situ PL measurements as a versatile technique to identify suitable precursors, reactants and ALD processes for QD embedding and investigate the interaction between QDs and reactive gaseous species in general.}},
  author       = {{Kuhs, Jakob and Werbrouck, Andreas and Zawacka, Natalia Klaudia and Drijvers, Emile and Smet, Philippe and Hens, Zeger and Detavernier, Christophe}},
  issn         = {{1944-8244}},
  journal      = {{ACS APPLIED MATERIALS & INTERFACES}},
  keywords     = {{atomic layer deposition,quantum dots,in situ photoluminescence,water sensitive,embedding,CdSe/CdS/ZnS,CDSE NANOCRYSTALS,OXIDE,LUMINESCENCE,FILMS,CONFORMALITY,SPECTROSCOPY,ALUMINA,GROWTH,AL2O3,ZNO}},
  language     = {{eng}},
  number       = {{29}},
  pages        = {{26277--26287}},
  title        = {{In situ photoluminescence of colloidal quantum dots during gas exposure : the role of water and reactive atomic layer deposition precursors}},
  url          = {{http://doi.org/10.1021/acsami.9b08259}},
  volume       = {{11}},
  year         = {{2019}},
}

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