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High-yield parallel transfer print integration of III-V substrate-illuminated C-band photodiodes on silicon photonic integrated circuits

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Abstract
Transfer printing is an enabling technology for the efficient integration of III-V semiconductor devices on a silicon waveguide circuit. In this paper we discuss the transfer printing of substrate-illuminated III-V C-band photodetectors on a silicon photonic waveguide circuit. The devices were fabricated on an InP substrate, encapsulated and underetched in FeCl3, held in place by photoresist tethers. Using a 2x2 arrayed PDMS stamp with a pitch of 500 mu m in x-direction and 250 mu m in y-direction the photodiodes were transfer printed onto DVS-BCB-coated SOI waveguide circuits interfaced with grating couplers. 83 out of 84 devices were successfully integrated.
Keywords
Heterogeneous integration, photodiodes, photonic integration, transfer printing, silicon photonics

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Citation

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MLA
Muliuk, Grigorij, et al. “High-Yield Parallel Transfer Print Integration of III-V Substrate-Illuminated C-Band Photodiodes on Silicon Photonic Integrated Circuits.” SILICON PHOTONICS XIV, edited by Graham T. Reed and Andrew P. Knights, vol. 10923, 2019, doi:10.1117/12.2507373.
APA
Muliuk, G., Zhang, J., Goyvaerts, J., Kumari, S., Corbett, B., Van Thourhout, D., & Roelkens, G. (2019). High-yield parallel transfer print integration of III-V substrate-illuminated C-band photodiodes on silicon photonic integrated circuits. In G. T. Reed & A. P. Knights (Eds.), SILICON PHOTONICS XIV (Vol. 10923). San Francisco, USA. https://doi.org/10.1117/12.2507373
Chicago author-date
Muliuk, Grigorij, Jing Zhang, Jeroen Goyvaerts, Sulakshna Kumari, Brian Corbett, Dries Van Thourhout, and Günther Roelkens. 2019. “High-Yield Parallel Transfer Print Integration of III-V Substrate-Illuminated C-Band Photodiodes on Silicon Photonic Integrated Circuits.” In SILICON PHOTONICS XIV, edited by Graham T. Reed and Andrew P. Knights. Vol. 10923. https://doi.org/10.1117/12.2507373.
Chicago author-date (all authors)
Muliuk, Grigorij, Jing Zhang, Jeroen Goyvaerts, Sulakshna Kumari, Brian Corbett, Dries Van Thourhout, and Günther Roelkens. 2019. “High-Yield Parallel Transfer Print Integration of III-V Substrate-Illuminated C-Band Photodiodes on Silicon Photonic Integrated Circuits.” In SILICON PHOTONICS XIV, ed by. Graham T. Reed and Andrew P. Knights. Vol. 10923. doi:10.1117/12.2507373.
Vancouver
1.
Muliuk G, Zhang J, Goyvaerts J, Kumari S, Corbett B, Van Thourhout D, et al. High-yield parallel transfer print integration of III-V substrate-illuminated C-band photodiodes on silicon photonic integrated circuits. In: Reed GT, Knights AP, editors. SILICON PHOTONICS XIV. 2019.
IEEE
[1]
G. Muliuk et al., “High-yield parallel transfer print integration of III-V substrate-illuminated C-band photodiodes on silicon photonic integrated circuits,” in SILICON PHOTONICS XIV, San Francisco, USA, 2019, vol. 10923.
@inproceedings{8626739,
  abstract     = {Transfer printing is an enabling technology for the efficient integration of III-V semiconductor devices on a silicon waveguide circuit. In this paper we discuss the transfer printing of substrate-illuminated III-V C-band photodetectors on a silicon photonic waveguide circuit. The devices were fabricated on an InP substrate, encapsulated and underetched in FeCl3, held in place by photoresist tethers. Using a 2x2 arrayed PDMS stamp with a pitch of 500 mu m in x-direction and 250 mu m in y-direction the photodiodes were transfer printed onto DVS-BCB-coated SOI waveguide circuits interfaced with grating couplers. 83 out of 84 devices were successfully integrated.},
  articleno    = {1092305},
  author       = {Muliuk, Grigorij and Zhang, Jing and Goyvaerts, Jeroen and Kumari, Sulakshna and Corbett, Brian and Van Thourhout, Dries and Roelkens, Günther},
  booktitle    = {SILICON PHOTONICS XIV},
  editor       = {Reed, Graham T. and Knights, Andrew P.},
  isbn         = {9781510624887},
  issn         = {0277-786X},
  keywords     = {Heterogeneous integration,photodiodes,photonic integration,transfer printing,silicon photonics},
  language     = {eng},
  location     = {San Francisco, USA},
  pages        = {7},
  title        = {High-yield parallel transfer print integration of III-V substrate-illuminated C-band photodiodes on silicon photonic integrated circuits},
  url          = {http://dx.doi.org/10.1117/12.2507373},
  volume       = {10923},
  year         = {2019},
}

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