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High-yield parallel transfer print integration of III-V substrate-illuminated C-band photodiodes on silicon photonic integrated circuits

(2019) Silicon Photonics XIV. 10923. p.1-7
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Center for nano- and biophotonics (NB-Photonics)

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Citation

Please use this url to cite or link to this publication:

MLA
Muliuk, Grigorij et al. “High-yield Parallel Transfer Print Integration of III-V Substrate-illuminated C-band Photodiodes on Silicon Photonic Integrated Circuits.” Silicon Photonics XIV. Ed. Graham T. Reed & Andrew P. Knights. Vol. 10923. 2019. 1–7. Print.
APA
Muliuk, G., Zhang, J., Goyvaerts, J., Kumari, S., Corbett, B., Van Thourhout, D., & Roelkens, G. (2019). High-yield parallel transfer print integration of III-V substrate-illuminated C-band photodiodes on silicon photonic integrated circuits. In G. T. Reed & A. P. Knights (Eds.), Silicon Photonics XIV (Vol. 10923, pp. 1–7). Presented at the Proceedings of SPIE-Conference on Silicon Photonics XIV .
Chicago author-date
Muliuk, Grigorij, Jing Zhang, Jeroen Goyvaerts, Sulakshna Kumari, Brian Corbett, Dries Van Thourhout, and Günther Roelkens. 2019. “High-yield Parallel Transfer Print Integration of III-V Substrate-illuminated C-band Photodiodes on Silicon Photonic Integrated Circuits.” In Silicon Photonics XIV, ed. Graham T. Reed and Andrew P. Knights, 10923:1–7.
Chicago author-date (all authors)
Muliuk, Grigorij, Jing Zhang, Jeroen Goyvaerts, Sulakshna Kumari, Brian Corbett, Dries Van Thourhout, and Günther Roelkens. 2019. “High-yield Parallel Transfer Print Integration of III-V Substrate-illuminated C-band Photodiodes on Silicon Photonic Integrated Circuits.” In Silicon Photonics XIV, ed. Graham T. Reed and Andrew P. Knights, 10923:1–7.
Vancouver
1.
Muliuk G, Zhang J, Goyvaerts J, Kumari S, Corbett B, Van Thourhout D, et al. High-yield parallel transfer print integration of III-V substrate-illuminated C-band photodiodes on silicon photonic integrated circuits. In: Reed GT, Knights AP, editors. Silicon Photonics XIV. 2019. p. 1–7.
IEEE
[1]
G. Muliuk et al., “High-yield parallel transfer print integration of III-V substrate-illuminated C-band photodiodes on silicon photonic integrated circuits,” in Silicon Photonics XIV, San Francisco, USA, 2019, vol. 10923, pp. 1–7.
@inproceedings{8626739,
  articleno    = {10923},
  author       = {Muliuk, Grigorij and Zhang, Jing and Goyvaerts, Jeroen and Kumari, Sulakshna and Corbett, Brian and Van Thourhout, Dries and Roelkens, Günther},
  booktitle    = {Silicon Photonics XIV},
  editor       = {Reed, Graham T. and Knights, Andrew P.},
  isbn         = {9781510624887},
  location     = {San Francisco, USA},
  pages        = {10923:1--10923:7},
  title        = {High-yield parallel transfer print integration of III-V substrate-illuminated C-band photodiodes on silicon photonic integrated circuits},
  url          = {http://dx.doi.org/10.1117/12.2507373},
  volume       = {10923},
  year         = {2019},
}

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