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Sputter deposition of copper oxide films

(2019) APPLIED SURFACE SCIENCE. 492. p.711-717
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Abstract
Copper oxide thin films are grown by reactive magnetron sputter deposition. To define the parameter space to obtain CuO films, the influence of the oxygen partial pressure, the total pressure, and the discharge current was investigated on the phase formation. A clear change from pure copper, over cuprite (Cu2O), and paramelaconite (Cu4O3) to tenorite (CuO) thin films with increasing oxygen partial pressure was observed using X-ray diffraction and Fourier transform infrared spectroscopy. The main driving force defining the phase composition is the oxygen partial pressure, while the influence of the total pressure, and the discharge current is minimal. A clear condition to obtain phase pure CuO films could be defined based on the measured discharge voltage. Both the domain size, and the Bragg peak position for pure CuO thin films can be correlated to the negative ion bombardment during film growth.
Keywords
Direct current magnetron sputtering, Copper oxide, Energy per atom, Negative ion bombardment, THIN-FILMS, STRUCTURAL-PROPERTIES, OPTICAL-PROPERTIES, CU2O, OXYGEN, MICROSTRUCTURE, SPECTROSCOPY, GROWTH, VAPOR

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MLA
Altangerel, Dulmaa, et al. “Sputter Deposition of Copper Oxide Films.” APPLIED SURFACE SCIENCE, vol. 492, 2019, pp. 711–17, doi:10.1016/j.apsusc.2019.06.263.
APA
Altangerel, D., Vrielinck, H., Khelifi, S., & Depla, D. (2019). Sputter deposition of copper oxide films. APPLIED SURFACE SCIENCE, 492, 711–717. https://doi.org/10.1016/j.apsusc.2019.06.263
Chicago author-date
Altangerel, Dulmaa, Henk Vrielinck, Samira Khelifi, and Diederik Depla. 2019. “Sputter Deposition of Copper Oxide Films.” APPLIED SURFACE SCIENCE 492: 711–17. https://doi.org/10.1016/j.apsusc.2019.06.263.
Chicago author-date (all authors)
Altangerel, Dulmaa, Henk Vrielinck, Samira Khelifi, and Diederik Depla. 2019. “Sputter Deposition of Copper Oxide Films.” APPLIED SURFACE SCIENCE 492: 711–717. doi:10.1016/j.apsusc.2019.06.263.
Vancouver
1.
Altangerel D, Vrielinck H, Khelifi S, Depla D. Sputter deposition of copper oxide films. APPLIED SURFACE SCIENCE. 2019;492:711–7.
IEEE
[1]
D. Altangerel, H. Vrielinck, S. Khelifi, and D. Depla, “Sputter deposition of copper oxide films,” APPLIED SURFACE SCIENCE, vol. 492, pp. 711–717, 2019.
@article{8625001,
  abstract     = {{Copper oxide thin films are grown by reactive magnetron sputter deposition. To define the parameter space to obtain CuO films, the influence of the oxygen partial pressure, the total pressure, and the discharge current was investigated on the phase formation. A clear change from pure copper, over cuprite (Cu2O), and paramelaconite (Cu4O3) to tenorite (CuO) thin films with increasing oxygen partial pressure was observed using X-ray diffraction and Fourier transform infrared spectroscopy. The main driving force defining the phase composition is the oxygen partial pressure, while the influence of the total pressure, and the discharge current is minimal. A clear condition to obtain phase pure CuO films could be defined based on the measured discharge voltage. Both the domain size, and the Bragg peak position for pure CuO thin films can be correlated to the negative ion bombardment during film growth.}},
  author       = {{Altangerel, Dulmaa and Vrielinck, Henk and Khelifi, Samira and Depla, Diederik}},
  issn         = {{0169-4332}},
  journal      = {{APPLIED SURFACE SCIENCE}},
  keywords     = {{Direct current magnetron sputtering,Copper oxide,Energy per atom,Negative ion bombardment,THIN-FILMS,STRUCTURAL-PROPERTIES,OPTICAL-PROPERTIES,CU2O,OXYGEN,MICROSTRUCTURE,SPECTROSCOPY,GROWTH,VAPOR}},
  language     = {{eng}},
  pages        = {{711--717}},
  title        = {{Sputter deposition of copper oxide films}},
  url          = {{http://doi.org/10.1016/j.apsusc.2019.06.263}},
  volume       = {{492}},
  year         = {{2019}},
}

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