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Abstract
We demonstrate 60Gb/s NRZ and 100Gb/s PAM4 data modulation with an O- band silicon ring modulator with only 1.6Vpp and 2.5Vpp drive swing respectively, leveraging the large modulation efficiency (55pm/V) and electro- optical bandwidth (35GHz) realized by an optimized vertical PN diode phase shifter design.
Keywords
optical interconnect, silicon photonics, ring modulator, PAM4, NRZ

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MLA
Ban, Yoojin et al. “Low-voltage 60Gb/s NRZ and 100Gb/s PAM4 O-band Silicon Ring Modulator.” 2019 8TH ANNUAL IEEE PHOTONICS SOCIETY OPTICAL INTERCONNECTS CONFERENCE (OI). IEEE, 2019. 1–2. Print.
APA
Ban, Yoojin, Verbist, J., Vanhoecke, M., Bauwelinck, J., Verheyen, P., Lardenois, S., Pantouvaki, M., et al. (2019). Low-voltage 60Gb/s NRZ and 100Gb/s PAM4 O-band silicon ring modulator. 2019 8TH ANNUAL IEEE PHOTONICS SOCIETY OPTICAL INTERCONNECTS CONFERENCE (OI) (pp. 1–2). Presented at the 8th Annual IEEE-Photonics-Society Optical Interconnects Conference (OI), IEEE.
Chicago author-date
Ban, Yoojin, Jochem Verbist, Michael Vanhoecke, Johan Bauwelinck, P. Verheyen, S. Lardenois, M. Pantouvaki, and Joris Van Campenhout. 2019. “Low-voltage 60Gb/s NRZ and 100Gb/s PAM4 O-band Silicon Ring Modulator.” In 2019 8TH ANNUAL IEEE PHOTONICS SOCIETY OPTICAL INTERCONNECTS CONFERENCE (OI), 1–2. IEEE.
Chicago author-date (all authors)
Ban, Yoojin, Jochem Verbist, Michael Vanhoecke, Johan Bauwelinck, P. Verheyen, S. Lardenois, M. Pantouvaki, and Joris Van Campenhout. 2019. “Low-voltage 60Gb/s NRZ and 100Gb/s PAM4 O-band Silicon Ring Modulator.” In 2019 8TH ANNUAL IEEE PHOTONICS SOCIETY OPTICAL INTERCONNECTS CONFERENCE (OI), 1–2. IEEE.
Vancouver
1.
Ban Y, Verbist J, Vanhoecke M, Bauwelinck J, Verheyen P, Lardenois S, et al. Low-voltage 60Gb/s NRZ and 100Gb/s PAM4 O-band silicon ring modulator. 2019 8TH ANNUAL IEEE PHOTONICS SOCIETY OPTICAL INTERCONNECTS CONFERENCE (OI). IEEE; 2019. p. 1–2.
IEEE
[1]
Y. Ban et al., “Low-voltage 60Gb/s NRZ and 100Gb/s PAM4 O-band silicon ring modulator,” in 2019 8TH ANNUAL IEEE PHOTONICS SOCIETY OPTICAL INTERCONNECTS CONFERENCE (OI), Santa Fe, NM, 2019, pp. 1–2.
@inproceedings{8620953,
  abstract     = {We demonstrate 60Gb/s NRZ and 100Gb/s PAM4 data modulation with an O- band silicon ring modulator with only 1.6Vpp and 2.5Vpp drive swing respectively, leveraging the large modulation efficiency (55pm/V) and electro- optical bandwidth (35GHz) realized by an optimized vertical PN diode phase shifter design.},
  author       = {Ban, Yoojin and Verbist, Jochem and Vanhoecke, Michael and Bauwelinck, Johan and Verheyen, P. and Lardenois, S. and Pantouvaki, M. and Van Campenhout, Joris},
  booktitle    = {2019 8TH ANNUAL IEEE PHOTONICS SOCIETY OPTICAL INTERCONNECTS CONFERENCE (OI)},
  isbn         = {9781728114965},
  issn         = {2376-8665},
  keywords     = {optical interconnect,silicon photonics,ring modulator,PAM4,NRZ},
  language     = {eng},
  location     = {Santa Fe, NM},
  pages        = {1--2},
  publisher    = {IEEE},
  title        = {Low-voltage 60Gb/s NRZ and 100Gb/s PAM4 O-band silicon ring modulator},
  url          = {http://dx.doi.org/10.1109/OIC.2019.8714384},
  year         = {2019},
}

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