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Wide band gap kesterite absorbers for thin film solar cells : potential and challenges for their deployment in tandem devices

(2019) SUSTAINABLE ENERGY & FUELS. 3(9). p.2246-2259
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Abstract
This work reports on developments in the field of wide band gap Cu2ZnXY4 (with X = Sn, Si or Ge, and Y = S, Se) kesterite thin film solar cells. An overview on recent developments and the current understanding of wide band gap kesterite absorber layers, alternative buffer layers, and suitable transparent back contacts is presented. Cu2ZnGe(S,Se)(4) absorbers with absorber band gaps up to 1.7 eV have been successfully developed and integrated into solar cells. Combining a CdS buffer layer prepared by an optimized chemical bath deposition process with a 1.36 eV band gap absorber resulted in a record Cu2ZnGeSe4 cell efficiency of 7.6%, while the highest open-circuit voltage of 730 mV could be obtained for a 1.54 eV band gap absorber and a Zn(O,S) buffer layer. Employing InZnOx or TiO2 protective top layers on SnO2:In transparent back contacts yields 85-90% of the solar cell performance of reference cells (with Mo back contact). These advances show the potential as well as the challenges of wide band gap kesterites for future applications in high-efficiency and low-cost tandem photovoltaic devices.
Keywords
BACK CONTACT, EFFICIENCY, SIMULATION

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MLA
Vermang, Bart, et al. “Wide Band Gap Kesterite Absorbers for Thin Film Solar Cells : Potential and Challenges for Their Deployment in Tandem Devices.” SUSTAINABLE ENERGY & FUELS, vol. 3, no. 9, 2019, pp. 2246–59.
APA
Vermang, B., Brammertz, G., Meuris, M., Schnabel, T., Ahlswede, E., Choubrac, L., … Bär, M. (2019). Wide band gap kesterite absorbers for thin film solar cells : potential and challenges for their deployment in tandem devices. SUSTAINABLE ENERGY & FUELS, 3(9), 2246–2259.
Chicago author-date
Vermang, Bart, Guy Brammertz, Marc Meuris, Thomas Schnabel, Erik Ahlswede, Leo Choubrac, Sylvie Harel, et al. 2019. “Wide Band Gap Kesterite Absorbers for Thin Film Solar Cells : Potential and Challenges for Their Deployment in Tandem Devices.” SUSTAINABLE ENERGY & FUELS 3 (9): 2246–59.
Chicago author-date (all authors)
Vermang, Bart, Guy Brammertz, Marc Meuris, Thomas Schnabel, Erik Ahlswede, Leo Choubrac, Sylvie Harel, Christophe Cardinaux, Ludovic Arzel, Nicolas Barreau, Joop van Deelen, Pieter-Jan Bolt, Patrice Bras, Yi Ren, Eric Jaremalm, Samira Khelifi, Sheng Yang, Johan Lauwaert, Maria Batuk, Joke Hadermann, Xeniya Kozina, Evelyn Handick, Claudia Hartmann, Dominic Gerlach, Asahiko Matsuda, Shigenori Ueda, Toyohiro Chikyow, Roberto Félix, Yufeng Zhang, Regan George Wilks, and Marcus Bär. 2019. “Wide Band Gap Kesterite Absorbers for Thin Film Solar Cells : Potential and Challenges for Their Deployment in Tandem Devices.” SUSTAINABLE ENERGY & FUELS 3 (9): 2246–2259.
Vancouver
1.
Vermang B, Brammertz G, Meuris M, Schnabel T, Ahlswede E, Choubrac L, et al. Wide band gap kesterite absorbers for thin film solar cells : potential and challenges for their deployment in tandem devices. SUSTAINABLE ENERGY & FUELS. 2019;3(9):2246–59.
IEEE
[1]
B. Vermang et al., “Wide band gap kesterite absorbers for thin film solar cells : potential and challenges for their deployment in tandem devices,” SUSTAINABLE ENERGY & FUELS, vol. 3, no. 9, pp. 2246–2259, 2019.
@article{8620023,
  abstract     = {This work reports on developments in the field of wide band gap Cu2ZnXY4 (with X = Sn, Si or Ge, and Y = S, Se) kesterite thin film solar cells. An overview on recent developments and the current understanding of wide band gap kesterite absorber layers, alternative buffer layers, and suitable transparent back contacts is presented. Cu2ZnGe(S,Se)(4) absorbers with absorber band gaps up to 1.7 eV have been successfully developed and integrated into solar cells. Combining a CdS buffer layer prepared by an optimized chemical bath deposition process with a 1.36 eV band gap absorber resulted in a record Cu2ZnGeSe4 cell efficiency of 7.6%, while the highest open-circuit voltage of 730 mV could be obtained for a 1.54 eV band gap absorber and a Zn(O,S) buffer layer. Employing InZnOx or TiO2 protective top layers on SnO2:In transparent back contacts yields 85-90% of the solar cell performance of reference cells (with Mo back contact). These advances show the potential as well as the challenges of wide band gap kesterites for future applications in high-efficiency and low-cost tandem photovoltaic devices.},
  author       = {Vermang, Bart and Brammertz, Guy and Meuris, Marc and Schnabel, Thomas and Ahlswede, Erik and Choubrac, Leo and Harel, Sylvie and Cardinaux, Christophe and Arzel, Ludovic and Barreau, Nicolas and van Deelen, Joop and Bolt, Pieter-Jan and Bras, Patrice and Ren, Yi and Jaremalm, Eric and Khelifi, Samira and Yang, Sheng and Lauwaert, Johan and Batuk, Maria and Hadermann, Joke and Kozina, Xeniya and Handick, Evelyn and Hartmann, Claudia and Gerlach, Dominic and Matsuda, Asahiko and Ueda, Shigenori and Chikyow, Toyohiro and Félix, Roberto and Zhang, Yufeng and Wilks, Regan George and Bär, Marcus},
  issn         = {2398-4902},
  journal      = {SUSTAINABLE ENERGY & FUELS},
  keywords     = {BACK CONTACT,EFFICIENCY,SIMULATION},
  language     = {eng},
  number       = {9},
  pages        = {2246--2259},
  title        = {Wide band gap kesterite absorbers for thin film solar cells : potential and challenges for their deployment in tandem devices},
  url          = {http://dx.doi.org/10.1039/c9se00266a},
  volume       = {3},
  year         = {2019},
}

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