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A review is given on the low-frequency (LF) noise behavior of transistors fabricated with a high-kappa/metal gate stack. It is shown that the implementation of a work function tuning metal oxide cap layer has a pronounced impact on the gate stack quality and more in particular on the effective density of oxide traps.
Keywords
IMPACT, LAYER

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Citation

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Chicago
Simoen, Eddy, Romain Ritzenthaler, Tom Schram, Hiroaki Arimura, Naoto Horiguchi, and Cor Claeys. 2018. “On the Low-frequency Noise of High-kappa Gate Stacks : What Did We Learn?” In 2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 97–100. IEEE.
APA
Simoen, Eddy, Ritzenthaler, R., Schram, T., Arimura, H., Horiguchi, N., & Claeys, C. (2018). On the low-frequency noise of high-kappa gate stacks : what did we learn? 2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) (pp. 97–100). Presented at the 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), IEEE.
Vancouver
1.
Simoen E, Ritzenthaler R, Schram T, Arimura H, Horiguchi N, Claeys C. On the low-frequency noise of high-kappa gate stacks : what did we learn? 2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT). IEEE; 2018. p. 97–100.
MLA
Simoen, Eddy et al. “On the Low-frequency Noise of High-kappa Gate Stacks : What Did We Learn?” 2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT). IEEE, 2018. 97–100. Print.
@inproceedings{8619904,
  abstract     = {A review is given on the low-frequency (LF) noise behavior of transistors fabricated with a high-kappa/metal gate stack. It is shown that the implementation of a work function tuning metal oxide cap layer has a pronounced impact on the gate stack quality and more in particular on the effective density of oxide traps.},
  author       = {Simoen, Eddy and Ritzenthaler, Romain and Schram, Tom and Arimura, Hiroaki and Horiguchi, Naoto and Claeys, Cor},
  booktitle    = {2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)},
  isbn         = {9781538644416},
  keywords     = {IMPACT,LAYER},
  language     = {eng},
  location     = {Qingdao, PEOPLES R CHINA},
  pages        = {97--100},
  publisher    = {IEEE},
  title        = {On the low-frequency noise of high-kappa gate stacks : what did we learn?},
  url          = {http://dx.doi.org/10.1109/ICSICT.2018.8565820},
  year         = {2018},
}

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